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本文利用Hel紫外线作为激发源,测量了GaP(Ⅲ)面的角分辨紫外光电子能谱,通过详细的数据分析,解释了谱中观察到的各光电子峰。实验测得的体电子能带结构特征与理论符合较好。Hel ultraviolet light has been used to take angle resolved ultraviolet photoelectron spectra (ARUPS) of GaP(Ⅲ) surfaces. The observed photoelectron peaks have been explained based on detailed analysis of the data The measured characteristics of the bulk band structure agrees well with the theoretical prediction.
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