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多孔硅发光是激发电子通过表面态间接的复合过程。自然氧化引入新的表面态,改变了表面态的分布,从而引起了多孔硅光致发光光谱的移动。The light-emission of the porous silicon is an indirect recombination process of the excited electron through the surface states. During spontaneous oxidation new surface states are formed which make the photoluminescence spectra shift.
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