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多层溅射制备Wsix/Si薄膜的电阻率特性研究

王晓平 赵特秀 刘宏图 施一生 翁惠民 郭学哲

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多层溅射制备Wsix/Si薄膜的电阻率特性研究

王晓平, 赵特秀, 刘宏图, 施一生, 翁惠民, 郭学哲

ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING

WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE
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  • 利用多层溅射技术制备了WSix/Si薄膜,然后测量其平面电阻的退火行为,发现平面电阻在600-700℃之间退火后有陡降,这对应于非晶WSix薄膜中W5Si3四角相的形成。x射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化,它和薄膜结构的变化有很好的对应关系。
    Tungsten silicide films have been sputtered onto silicon substrate and annealed at temperature ranging from 400 to 1000℃ in vacuum. The structure and defect of each film is detected by X-ray diffraction (XRD) and positron annihilation technology (PAT), respectively. The sheet resistance has been measured and the result in-dicates that the sheet resistance of films decrease steeply as a result of annealing in the range of 600-700℃. This phenomenon corresponds to the crystallization of W5Si3 tetragonal phase in films which has been certified by XRD. Electrical properties of films are sensitive to structure and defects in films and electrical measurement can be used as a good probe for the study on the characteristics of films.
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出版历程
  • 收稿日期:  1993-06-16
  • 刊出日期:  1994-05-20

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