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对不同Sb掺杂浓度Hg1-xCdxTe(x≈0.38)样品在3.9—115K的温度范围内进行了光致发光实验测量,观察到与局域激子、带到带和施主受主对有关的辐射复合过程.并用光致发光手段发现Sb掺杂在x≈0.38的Hg1-xCdxTe中引入的约30meV的受主能级The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈0.38)from 3.9K to 115K. The band to band transition,localized exciton and donor acceptor pair(D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).
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