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Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH4, Ar and H2 as source gas. It was found that the content of H2 in the mixture plays an important role for crystallization of Si films. High-quality low-temperature polycrystalline Si films were obtained under the optimal amount of H2 in the source gas.
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Keywords:
- low-temperature polycrystalline Si film /
- PECVD /
- Ar-diluted SiH4 /
- H2 flow
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