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掺杂对铌酸锂晶体非挥发全息存储性能的影响

付 博 张国权 刘祥明 申 岩 徐庆君 孔勇发 陈绍林 许京军

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掺杂对铌酸锂晶体非挥发全息存储性能的影响

付 博, 张国权, 刘祥明, 申 岩, 徐庆君, 孔勇发, 陈绍林, 许京军

Influence of dopants on nonvolatile holographic storage in lithium niobate

Fu Bo, Zhang Guo-Quan, Liu Xiang-Ming, Shen Yan, Xu Qing-Jun, Kong Yong-Fa, Chen Shao-Lin, Xu Jing-Jun
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  • 通过研究掺镁、掺锌和掺铟同成分铌酸锂晶体的紫外-红光双色全息存储性能,发现双色记录响应时间均比单色记录时明显缩短,最多的可减小3个数量级;双色记录灵敏度大幅度提高,在掺镁5 mol.%的晶体中可达到11 cm/J.在掺杂浓度超过抗光损伤阈值的铌酸锂晶体中,均可实现非挥发全息存储.但是,在掺镁、锌样品中,深、浅能级中心上的光栅反相,而在掺铟样品中则表现为同相.这是由于掺杂离子的种类不同,在铌酸锂晶体中形成的缺陷中心也不同所引起的.
    By studying the ultraviolet-red two-color holographic storage performances of Mg-, Zn- and In-doped lithium niobate crystals, we found that the response time of the two-color recording could be shortened by as much as 3 orders of magnitude compared to that of one-color recording, and the two-color recording sensitivity was improved significantly, which was measured to be 11 cm/J in the crystal doped with Mg of 5 mol.%. Nonvolatile holographic storage was achieved in the crystals with doping concentrations above the damage-resistant threshold value. However, gratings on the deep centers and the shallow centers were out of phase in Mg- or Zn-doped lithium niobate, while those in In-doped lithium niobate were in phase. We consider that different defects induced by different dopants are responsible for the observed results.
    • 基金项目: 国家自然科学基金(批准号:60678021,10334010),教育部新世纪优秀人才支持计划(批准号:NCET-04-0234),天津市国际科技合作项目(批准号:06YFGHHZ00500),国家重点基础研究发展计划(批准号:2007CB307002,2006CB921703)和高等学校学科创新引智计划资助的课题.
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  • 文章访问数:  7431
  • PDF下载量:  738
  • 被引次数: 0
出版历程
  • 收稿日期:  2007-07-04
  • 修回日期:  2007-09-21
  • 刊出日期:  2008-05-28

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