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不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

郑立仁 黄柏标 尉吉勇

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不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

郑立仁, 黄柏标, 尉吉勇

Preparation of SiOx nanowires in different atmosphere, their morphology, PL and FTIR properties

Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong
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  • 以N2/H2、N2或NH3为载气,利用碳辅助化学气相沉积法,常压1140℃下在石英衬底上制备了大量直径为20—300 nm,长数百微米的非晶SiOx纳米线.制备得到的纳米线具有高度定向生长的特性.利用透射电子显微镜、扫描电子显微镜及电子能谱对SiOx纳米线的形貌及组分进行了分析,Si与O原子之比为1∶18.傅里叶红外吸收谱显示了非晶氧化硅的三个特征峰(482,806和1095 cm-1)及1132 cm-1无序氧化硅结构的强吸收峰.SiOx纳米线光致发光光谱(PL)在440 nm(283 eV)处具有较强的荧光峰;N2为载气生长的SiOx纳米线的PL峰强比NH3为载气生长的SiOx纳米线峰强大四个数量级.
    Highdensity SiOx nanowires were fabricated on a largescale using carbonassisted CVD method by Fe—Al—O catalyst at 1140℃ in flowing N2/H2,N2 and NH3 atmospheres.The SiOx nanowires have uniform diameters of 20—300 nm and lengths of up to a few hundred micrometers. SEM, TEM, EDS, FTIR and PL were preformed to characterize the microstructure, composition and optical performance of the nanowires. Energy dispersive Xray spectral analysis reveals that the nanowires consist of Si and O elements in an atomic ratio of approximately 1∶18The nanowires show IR absorption peaks at 482,806,1095 and 1132 cm-1. The PL peak of the nanowires is located at 440 nm (283eV).The PL inensity of the SiOx nanowire (N2) is 104 times that of the SiOx nanowire(N2/NH3).
    • 基金项目: 国家重点基础研究发展计划(批准号:2007CB613302)和国家自然科学基金(批准号:50721002,10774091)资助的课题.
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  • 文章访问数:  7258
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  • 被引次数: 0
出版历程
  • 收稿日期:  2008-04-07
  • 修回日期:  2008-08-14
  • 刊出日期:  2009-02-05

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