Er硅酸盐化合物薄膜的相转变和光致发光特性研究

王兴军; 董斌; 周治平

doi:10.7498/aps.59.3554

摘要

溶胶-凝胶法在Si(100)基片上旋涂法制备铒硅酸盐化合物（Er silicate）薄膜.系统研究了烧结温度和烧结时间对Er silicate薄膜相结构、相转变以及光致发光特性的影响.在1000 ℃以下，薄膜晶体结构为Er2O3 晶体和SiO2 非晶的混合物.随着烧结温度增加到1200 ℃，保温时间增加到30 min，薄膜晶体结构转变成(100),(200)和(300)择优取向的Er2SiO5相.

关键词:

Abstract

The Er2SiO5 films with strong room-temperature photoluminescence have been fabricated by using the sol-gel spin coating method. The effects of sintering temperature and time on phase structure and phase transformation of ErSiO films have been investigated. A mixture of Er2O3 crystal and amorphous SiO2 was obtained below 1000 ℃, and the Er2SiO5 phase with high (100), (200), and (300) preferred orientation was detected when the temperature increased to higher than 1200 ℃. The phase structure has an evident influence on the photoluminescence properties for ErSiO films. For the phase structure of Er2O3 crystal with amorphous SiO2, the weak PL spectra with a main peak at λ=1.535 μm were observed. The strongest main PL peak moved to λ=1.528 μm, and the intensity was increased about 10—20 times when the phase structure changed to Er2SiO5. The Er2SiO5 films with strong room temperature photoluminescence are promising candidates for application in Si-based light source and amplifier.

Keywords:

作者及机构信息

(1)北京大学信息科学技术学院电子学系，区域光纤通信网与新型光通信系统国家重点实验室,北京 100871; (2)大连民族学院理学院光电子技术研究所，大连 116600

基金项目: 国家自然科学基金（批准号：60907024,60977018）资助的课题.

Authors and contacts

(1)北京大学信息科学技术学院电子学系，区域光纤通信网与新型光通信系统国家重点实验室,北京 100871; (2)大连民族学院理学院光电子技术研究所，大连 116600

参考文献

[1]	［1］Pavesi L, Lockwood D J 2004 Silicon Photonics (Berlin: Springer)
[2]	［2］Polman A 1997 J Appl. Phys. 82 1
[3]	［3］Li C R, Ming C G, Li S F, Ding J H, Wang B C, Zhang L 2008 Acta Phys. Sin. 57 6604 (in Chinese) ［李成仁、明成国、李淑凤、丁建华、王宝成、张丽 2008 物理学报 57 6604］
[4]	［4］Xiao Z S, Xu F, Zhang T H, Cheng G A, Gu L L 2001 Acta Phys. Sin. 50 164 (in Chinese) ［肖志松、徐飞、张通和、程国安、顾岚 2001 物理学报 50 164］
[5]	［5］Han H S, Seo S Y, Shin J H 2001 Appl. Phys. Lett. 79 4568
[6]	［6］Han H S, Seo S Y, Shin J H, Park N 2002 Appl. Phys. Lett. 81 3720
[7]	［7］Isshiki H, de Dood M J A., Kimura T, Polman A 2004 Appl. Phys. Lett. 85 4343
[8]	［8］Wang X J, Nakajima T, Isshiki H, Kimura T 2009 Appl. Phys. Lett. 95 041906
[9]	［9］ Miritello M, Savio R L, Iacona F, Franzo G, Irrera A, Piro A M, Bongiorno C, Priolo F 2007 Adv. Mater. 19 1582
[10]	］Yin Y, Sun K, Xu W J, Ran G Z, Qin G G, Wang S M, Wang C Q 2009 J. Phys.: Condens. Matter 21 012204
[11]	］Suh K, Shin J H, Seo S J, Bae B S 2006 Appl. Phys. Lett. 89 223102
[12]	］Wang X, Zhang J G, Cheng B W, Yu J Z, Wang Q M 2006 J. Crys. Growth 289 178

施引文献

[1]	［1］Pavesi L, Lockwood D J 2004 Silicon Photonics (Berlin: Springer)
[2]	［2］Polman A 1997 J Appl. Phys. 82 1
[3]	［3］Li C R, Ming C G, Li S F, Ding J H, Wang B C, Zhang L 2008 Acta Phys. Sin. 57 6604 (in Chinese) ［李成仁、明成国、李淑凤、丁建华、王宝成、张丽 2008 物理学报 57 6604］
[4]	［4］Xiao Z S, Xu F, Zhang T H, Cheng G A, Gu L L 2001 Acta Phys. Sin. 50 164 (in Chinese) ［肖志松、徐飞、张通和、程国安、顾岚 2001 物理学报 50 164］
[5]	［5］Han H S, Seo S Y, Shin J H 2001 Appl. Phys. Lett. 79 4568
[6]	［6］Han H S, Seo S Y, Shin J H, Park N 2002 Appl. Phys. Lett. 81 3720
[7]	［7］Isshiki H, de Dood M J A., Kimura T, Polman A 2004 Appl. Phys. Lett. 85 4343
[8]	［8］Wang X J, Nakajima T, Isshiki H, Kimura T 2009 Appl. Phys. Lett. 95 041906
[9]	［9］ Miritello M, Savio R L, Iacona F, Franzo G, Irrera A, Piro A M, Bongiorno C, Priolo F 2007 Adv. Mater. 19 1582
[10]	］Yin Y, Sun K, Xu W J, Ran G Z, Qin G G, Wang S M, Wang C Q 2009 J. Phys.: Condens. Matter 21 012204
[11]	］Suh K, Shin J H, Seo S J, Bae B S 2006 Appl. Phys. Lett. 89 223102
[12]	］Wang X, Zhang J G, Cheng B W, Yu J Z, Wang Q M 2006 J. Crys. Growth 289 178

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