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在不同温度下用近空间升华法(CSS)制备了CdTe多晶薄膜,结合I-V,C-V特性及深能级瞬态谱研究了不同温度制备的CdTe薄膜对CdS/CdTe太阳电池性能的影响.结果表明,制备温度对电池组件的开路电压影响不大,对短路电流和填充因子有影响,CdTe薄膜的深中心对温度和频率的响应基本一致.580℃制备的样品暗饱和电流密度最小,载流子浓度较高,光电特性较好,而且空穴陷阱浓度较低,深中心复合作用较小.在此研究基础上制备出了面积为300 mm×400 mm
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关键词:
- 制备温度 /
- CdTe薄膜 /
- 深能级瞬态谱(DLTS) /
- CdS/CdTe太阳电池
In this research, the CdTe polycrystalline films are prepared at various temperatures by close-spaced sublimation. The experiment was conducted to investigate how difference in preparation temperature effects on CdTe/CdS solar cells by the characteration of I-V,C-V curves and deep level transient spectroscopy. The result shows that the difference of temperatures has some effect on Isc and FF, but not on Voc. The samples prepared at 580℃ have lowest dark saturated current density, higher carrier concentration and the photovoltaic performance is preferable. The response of deep-level impurities in CdTe films is unchanged with temperature and frequency, but the sample prepared at 580℃ has less deep-level impurity recombination because of lower hole trap concentration. Then, the CdS/CdTe solar cells with large area of 300 mm×400 mm have efficiency reaching 82% by improving the uniformity of temperature field.-
Keywords:
- preparing temperature /
- CdTe thin films /
- deep level transient spectroscopy(DLTS) /
- CdS/CdTe solar cell
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