超强磁场下非掺杂ZnSe/BeTe Ⅱ型量子阱中激子和带电激子的光学特性

冀子武; 郑雨军; 徐现刚

doi:10.7498/aps.60.047805

摘要

报道了液态氦温度(4.2 K)下非掺杂ZnSe/BeTe Ⅱ型量子结构中ZnSe势阱层内空间直接光致发光(PL)光谱的磁场依赖性(磁场高达53 T).实验结果显示,随着磁场的增加,激子和带电激子的PL强度呈现出相反的振动行为.当激子的PL强度增加时带电激子的PL强度减小,反之,当激子的强度减小时带电激子的强度却增加.并且在整个磁场范围内,这些振动呈现近似等间隔的周期性变化.这个行为被解释为费米能级与朗道能级的周期性共振,这个共振导致了处于费米能级上的二维电子气态密度的周期性调制.

关键词:

Abstract

We report on the magnetic field (up to 53 T) dependence of photoluminescence (PL) spectra occurring as a spacially direct optical transition of the ZnSe layer in undoped ZnSe/BeTe/ZnSe type-II quantum structures at a low temperature (4.2 K). With magnetic field increasing, the PL intensity (IX) of exciton (X) shows an oscillation feature opposite to the PL intensity (IX－) of charged exciton (X－). As IX- increases, IX decreases, but as IX－ decreases, IX increases. In all fields, the oscillation behaviour shows a periodic change approximately with magnetic field interval. The results are attributed to the periodic resonance of the Fermi level with the Landau level, which results in the modulation of the density of states of the 2DEG system at the Fermi energy.

Keywords:

作者及机构信息

(1)山东大学晶体材料国家重点实验室,济南 250100; (2)山东大学物理学院,济南 250100

基金项目: 国家自然科学基金(批准号:10844003,10874101),山东省自然科学基金(批准号:Y2008A10),国家重点基础研究发展计划(批准号:2009CB930503)资助的课题.

Authors and contacts

(1)School of Physics, Shandong University, Jinan 250100, China; (2)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

参考文献

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[2]	Cai C F, Wu H Z, Si J X, Sun Y, Dai N 2009 Acta Phys. Sin. 58 3560 (in Chinese ) [蔡春锋、吴惠桢、斯剑霄、孙艳、戴宁 2009 物理学报 58 3560]
[3]	Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 物理学报 57 1214]
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[10]	Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[11]	Maksimov A. A, Tartakovskii I I, Yakovlev D R, Bayer M, Waag A 2006 JETP Lett. 83 141
[12]	Haetty J, Lee E H, Luo H, Petrou A, Warnock J 1998 Solid State Commun. 108 205
[13]	Manassen A, Cohen E, Ron Arza, Linder E, Pfeiffer L N 1996 Phys. Rev. B 54 10609
[14]	Homburg O, Sebald K, Michler P, Gutowski J, Wenisch H, Hommel D 2000 Phys. Rev. B 62 7413
[15]	Ji Z W, Enya Y, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 427
[16]	Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[17]	Enyal Y H 2007 Graduate School of Engineering Faculty of Engneering, the University of Tokyo Master Paper p116(in Chinese)[塩谷陽平 2007 東京大学大学院工学系研究科物理工学专攻硕士论文 p116]
[18]	Lematre A, Testelin C, Rigaux C, Wojtowicz T, Karczewski G 2000 Phys. Rev. B 62 5059
[19]	Yamashita K, Kita T, Matsuura Y, Wada O, Geng C, Scholz F, Schweizer H, Oe K 2002 Phys. Rev. B 66 195317
[20]	Nomura S, Nakanishi T, Aoyagi Y 2001 Phys. Rev. B 63 165330

施引文献

[1]	Song Y X, Zhang W M, Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese ) [宋迎新、郑卫民、刘静、初宁宁、李素梅 2009 物理学报 58 6471]
[2]	Cai C F, Wu H Z, Si J X, Sun Y, Dai N 2009 Acta Phys. Sin. 58 3560 (in Chinese ) [蔡春锋、吴惠桢、斯剑霄、孙艳、戴宁 2009 物理学报 58 3560]
[3]	Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 物理学报 57 1214]
[4]	Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[5]	Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[6]	Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin.57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 物理学报 57 3260]
[7]	Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 物理学报 57 6609]
[8]	Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[9]	Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[10]	Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[11]	Maksimov A. A, Tartakovskii I I, Yakovlev D R, Bayer M, Waag A 2006 JETP Lett. 83 141
[12]	Haetty J, Lee E H, Luo H, Petrou A, Warnock J 1998 Solid State Commun. 108 205
[13]	Manassen A, Cohen E, Ron Arza, Linder E, Pfeiffer L N 1996 Phys. Rev. B 54 10609
[14]	Homburg O, Sebald K, Michler P, Gutowski J, Wenisch H, Hommel D 2000 Phys. Rev. B 62 7413
[15]	Ji Z W, Enya Y, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 427
[16]	Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[17]	Enyal Y H 2007 Graduate School of Engineering Faculty of Engneering, the University of Tokyo Master Paper p116(in Chinese)[塩谷陽平 2007 東京大学大学院工学系研究科物理工学专攻硕士论文 p116]
[18]	Lematre A, Testelin C, Rigaux C, Wojtowicz T, Karczewski G 2000 Phys. Rev. B 62 5059
[19]	Yamashita K, Kita T, Matsuura Y, Wada O, Geng C, Scholz F, Schweizer H, Oe K 2002 Phys. Rev. B 66 195317
[20]	Nomura S, Nakanishi T, Aoyagi Y 2001 Phys. Rev. B 63 165330

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