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电子器件散粒噪声测试方法研究

陈文豪 杜磊 庄奕琪 包军林 何亮 陈华 孙鹏 王婷岚

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电子器件散粒噪声测试方法研究

陈文豪, 杜磊, 庄奕琪, 包军林, 何亮, 陈华, 孙鹏, 王婷岚

Shot noise measurement methods in electronic devices

Zhuang Yi-Qi, Bao Jun-Lin, Sun Peng, Wang Ting-Lan, Chen Wen-Hao, Du Lei, He Liang, Chen Hua
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  • 本文分析了超导量子干涉器(SQUID)和超导-绝缘-超导(SIS)约瑟夫森结散粒噪声测试方法的应用局限性,提出了常规器件的散粒噪声测试方案.针对常规电子器件散粒噪声特性,研究了噪声测试基本条件,并建立了低温测试系统.通过采用双层屏蔽结构和超低噪声前置放大器,实现了较好的电磁干扰屏蔽和极低的背景噪声.在10 K温度下对常规二极管散粒噪声进行了测试,通过理论和测试结果对比分析,验证了测试系统的准确和可信性.
    The limitations to shot noise measurement methods based on superconducting quantum interference device (SQUID) and superconductivity-insulation-superconductor (SIS) Josephson junction are pointed out, and a method to measure the shot noises of conventional electronic devices is proposed. Shot noise characteristics of conventional electronic devices are analyzed, and then a low-temperature measurement system is established. By using a double-shielding construction and low noise preamplifier, the test system can achieve a good electromagnetic interference shielding and low background noise. The theoretical and the experimental results of shot noises in diodes at 10 K are in good agreement with each other. The accuracy and the credibility of measurement system are proved.
    • 基金项目: 国家重点基础研究发展计划(973计划)(批准号:2010CB631002)资助的课题.
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  • [1]

    Schottky W,Ann 1918 Phys. 57 541

    [2]

    Zhang Z Y,Wang T H 2004 Acta Phy.Sin. 53 942(in Chinese)[张志勇、王太宏 2004 物理学报 53 942]

    [3]

    Beenakker C,Sch nenberger C 2003 Phys. Today 56 37

    [4]

    Blanter Y,Büttiker M 2000 Physics Reports 336 1

    [5]

    Andersson S,Svensson C 2005 Electron. Lett. 41 869

    [6]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Phys. Rev. Lett. 83 1660

    [7]

    Bulashenko O,Mateos J,Pardo D,Gonz T,Reggiani L,Rubí J 1998 Phys. Rev. B 57 1366

    [8]

    Sim H S,Schomerus H 2002 Phys. Rev. Lett. 89 066801

    [9]

    McNeill J A 2009 Custom Integrated Circuits Conference 2009 CICC '09. IEEE, San Jose, Sept. 13—16, 2009, 567

    [10]

    Obrecht M S,Abou-Allam E,Manku T 2002 Electron Devices, IEEE Transactions on 49 524

    [11]

    Yan C,Guofu N,Rezvani A,Taylor S S 2008 Silicon Monolithic Integrated Circuits in RF Systems 2008. SiRF 2008. IEEE Topical Meeting on, Orlando, Jan. 23—25, 2008,118

    [12]

    Chen C,Deen M 2002 Electron Devices, IEEE Transactions on 49 1484

    [13]

    Klein P 2002 Electron Device Letters, IEEE 20 399

    [14]

    Navid R,Dutton R 2002 Simulation of Semiconductor Processes and Devices, 2002 SISPAD 2002. International Conference on, Kobe, Japan, Sept 4—6, 2002, 75

    [15]

    Navid R,Jungemann C,Lee T,Dutton R 2007 J. Appl. Phys. 101 124501

    [16]

    Jeon J,Lee J,Kim J,Park C H,Lee H,Oh H,Kang H K,Park B G,Shin H 2009 VLSI Technology, 2009 Symposium on, Kyoto, Japan, June 16—18, 2009,48

    [17]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Rev. Sci. Instrum. 70 2711

    [18]

    Onac E,Balestro F,Trauzettel B,Lodewijk C F,Kouwenhoven L P 2006 Phys. Rev. Lett. 96 026803

    [19]

    Steinbach A H,Martinis J M,Devoret M H 1996 Phys. Rev. Lett. 76 3806

    [20]

    Pralgauskaite S,Palenskis V,Matukas J,Petrulis J,KurilCik G 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66001H

    [21]

    Pralgauskait S,Palenskis V,Matukas J,Vizbaras A 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66000L

    [22]

    Gomila G,Pennetta C,Reggiani L,Sampietro M,Ferrari G,Bertuccio G 2004 Phys. Rev. Lett. 92 226601

    [23]

    Charalambous C D,Menemenlis N 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,2246

    [24]

    Charalambous C D,Menemenlis N,Kabranov O H,Makrakis D 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,1011

    [25]

    Nagaev K E 1995 Phys. Rev. B 52 4740

    [26]

    Kozub V V,Rudin A M 1995 Phys. Rev. B 52 7853

    [27]

    Vandamme L 2005 Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices 189

    [28]

    Cowley A M,Zettler R A 1968 Electron Devices, IEEE Transactions on 15 761

    [29]

    Montgomery H C,Clark M A 1953 Journal of Applied Physics 24 1337

    [30]

    Gomila G,Reggiani L,Rub X M J 2000 Journal of Applied Physics 88 3079

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出版历程
  • 收稿日期:  2010-09-06
  • 修回日期:  2011-01-11
  • 刊出日期:  2011-05-15

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