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金属/多孔硅/单晶硅(M/PS/Si)微结构的电学特性

孙鹏 胡明 刘博 孙凤云 许路加

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金属/多孔硅/单晶硅(M/PS/Si)微结构的电学特性

孙鹏, 胡明, 刘博, 孙凤云, 许路加

Electrical properties of the metal/porous silicon/Si(M/PS/Si) microstructure

Sun Peng, Hu Ming, Liu Bo, Sun Feng-Yun, Xu Lu-Jia
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  • 采用双槽电化学腐蚀法制备多孔硅层,然后在多孔硅表面沉积形成金属电极,制备出M/PS/Si微结构.利用SEM分析多孔硅的表面形貌,通过测试其I-V特性分析M/PS/Si微结构的电学特性.结果表明:由Pt做电极形成的M/PS/Si结构,表现出非整流特性.M/PS/Si结构的I-V曲线由线性区和非线性区组成,多孔硅孔隙率越高的M/PS/Si结构的I-V特性曲线线性区越宽.由Cu做电极形成的M/PS/Si结构,表现出整流特性.其整流比随多孔硅孔隙率增加而减小.
    In this paper, porous silicon (PS) was prepared in a double-tank cell using the electrochemical corrosion method. Subsequently, different metal films for electrical contacts were deposited on the PS samples by magnetron sputtering to form the M/PS/Si microstructure. The PS surface morphology was characterized by SEM. The electrical properties of the M/PS/Si microstructure were studied through the I-V characteristic tests. It was shown that Pt can form ohmic contact with PS. The I-V characteristic curves were formed from two parts:linear part and nonlinear part. However, Cu formed Schottky contact with PS and its I-V curves showed rectification characteristics. The rectification ratio decreased when the porosity of the PS increased.
    • 基金项目: 国家自然科学基金(批准号:60771019)资助的课题.
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    Korcala Andrzej, Baa Wacaw, Bratkowski Artur, Borowski Piotr, ukasiak Zbigniew 2006 Optical Materials 28 143

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    Chang C C, Chen L C 1997 Materials Letters 32 287

    [2]

    Kim H J, Kim Y Y, Lee K W 2010 Current Applied Physics 10 181

    [3]

    Massera E, Nasti I, Quercia L, Rea I, Francia G Di 2004 Sensors and Actuators B:Chemical 102 195

    [4]

    Irajizad A, Rahimi F, Chavoshi M, Ahadian M M 2004 Sensors and Actuators B:Chemical 100 341

    [5]

    Dücsö C S, Vázsonyi , dám M, Szabó I, Bársony I, Gardeniers J G E,Berg A Van Den 1997 Sensors and Actuators A:Physical 60 235

    [6]

    Kronast W, Müller B, Siedel W, Stoffel A 2001 Sensors and Actuators A:Physical 87 188

    [7]

    Tsamis C, Nassiopoulou A G, Tserepi A 2003 Sensors and Actuators B:Chemical 95 78

    [8]

    Papadimitriou D, Tsamis C, Nassiopoulou A G 2004 Sensors and Actuators B:Chemical 103 356

    [9]

    Fang Z Q, Hu M, Zhang W, Zhang X R 2008 Acta Phys. Sin. 57 103 (in Chinese) [房振乾、胡 明、张 伟、张绪瑞 2008 物理学报 57 103]

    [10]

    Xu L J, Hu M, Yang H B, Yang M L, Zhang J 2010 Acta Phys. Sin. 59 8794 (in Chinese) [许路加、胡 明、杨海波、杨孟琳、张 洁 2010 物理学报 59 8794]

    [11]

    Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博、王 坤、陈田祥、陈 迪、姚淑德 2008 物理学报 57 2445]

    [12]

    Huang W, Chen Z Z, Chen Y, Shi E W, Zhang J Y, Liu Q F, Liu Q 2010 Acta Phys. Sin. 59 3466 (in Chinese) [黄 维、陈之战、陈 义、施尔畏、张静玉、刘庆峰、刘 茜 2010 物理学报 59 3466]

    [13]

    Ansari Z A, Hong Kwangpyo, Lee Chongmu 2002 Materials Science and Engineering B 90 103

    [14]

    Arenas M Concepción, Hu Hailin, Río J Antonio del, Sánchez Aarón, Nicho M E 2006 Solar Energy Materials and Solar Cells 90 2413

    [15]

    Jemai R, Alaya A, Meskini O, Nouiri M, Mghaieth R, Khirouni K, Alaya S 2007 Materials Science and Engineering B 137 263

    [16]

    Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波、胡 明、张 伟、张绪瑞、李德军、王明霞 2007 物理学报 56 4032]

    [17]

    Remaki B, Populaire C, Lysenko V, Barbier D 2003 Materials Science and Engineering B 101 313

    [18]

    Beale MIJ 1985 Journal of Crystal Growth 73 622

    [19]

    Bazrafkan I, Dariani RS 2009 Physica B:Condensed Matter 404 1638

    [20]

    Molnár K, Mohácsy T, Abdulhadi A H, Volk J, Bársony I 2003 Physica Status Solidi A 197 446

    [21]

    Korcala Andrzej, Baa Wacaw, Bratkowski Artur, Borowski Piotr, ukasiak Zbigniew 2006 Optical Materials 28 143

    [22]

    Mkhitaryan Z H, Shatveryan A A, Adamyan A Z, Aroutiounian V M 2005 Optical Materials 27 962

    [23]

    Vinod P N 2009 Journal of Alloys and Compounds 470 393

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  • 收稿日期:  2010-07-22
  • 修回日期:  2010-08-29
  • 刊出日期:  2011-05-15

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