射频磁控反应溅射制备的Ag2O薄膜的椭圆偏振光谱研究

马姣民; 梁艳; 郜小勇; 陈超; 赵孟珂; 卢景霄

doi:10.7498/aps.61.056106

摘要

Ag2O薄膜在新型超高存储密度光盘和磁光盘方面具有潜在的应用前景.利用射频磁控反应溅射技术, 通过调节衬底温度在沉积气压为0.2 Pa、氧氩比为2:3的条件下制备了一系列Ag2O 薄膜.利用通用振子模型(包括1个Tauc-Lorentz振子和2个Lorentz 振子)拟合了薄膜的椭圆偏振光谱.在1.53.5 eV能量区间,薄膜的折射率在2.22.7之间, 消光系数在0.30.9之间. 在3.54.5 eV能量区间,薄膜呈现了明显的反常色散,揭示Ag2O薄膜的等离子体振荡频率在 3.54.5 eV之间. 随着衬底温度的升高,薄膜的光学吸收边总体上发生了红移, 该红移归结于薄膜晶格微观应变随衬底温度的升高而增大. Ag2O薄膜的光学常数表现出典型的介质材料特性.

关键词:

Abstract

Ag2O film has a potential application in high-density optical and magneto-optical disks. In this paper, a series of Ag2O films is deposited by radio-frequency reactive magnetron sputtering at different substrate temperatures, a deposition pressure of 0.2 Pa and an oxygen flow ratio of 2:3. The spectroscopic ellipsometry spectra of the films are fitted by using a general oscillator model (including one Tauc-Lorentz oscillator and two Lorentz oscillators). In an energy range between 1.5 eV and 3.5 eV, the refractive index and extinctive coefficient of the film are in ranges between 2.2 and 2.7, and between 0.3 and 0.9, respectively. The film indicates a clear abnormal dispersion in an energy range of 3.5 eV and 4.5 eV, meaning that the plasma oscillator frequency of the film is in this energy range . A redshift of the absorption edge of the film occurs with substrate temperature increasing, which can be attributed to the increased lattice strain. The optical constants of the film clearly show the dielectric properties.

Keywords:

Ag2O film /
spectroscopic ellipsometry /
radio-frequency reactive magnetron sputtering /
optical properties

作者及机构信息

1.
郑州大学物理工程学院材料物理教育部重点实验室, 郑州 450052;

2.
河南工业大学信息科学与技术学院, 郑州 450052

基金项目: 国家自然科学基金(批准号: 60807001)、河南省高等学校青年骨干教师资助计划、国家重点基础研究发展计划(批准号: 2011CB201605) 和河南省教育厅自然科学资助研究计划(批准号: 2010A140017)资助的课题.

Authors and contacts

1.
Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China;

2.
College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60807001), the Henan Province College Young Teachers Program of China, the National Basic Research Program of China (Grant No. 2011CB201605), and the Foundation of Henan Education Committee, China (Grant No. 2010A140017).

参考文献

[1]	Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000Jpn. J. Appl. Phys. 39 980
[2]	Kim J, Fuji H, Yamakama Y, Nakano T, Büchel D, Tominaga J,Atoda N 2001 Jpn. J. Appl. Phys. 40 1634
[3]	Pierson J F, Wiederkehr D, Billard A 2005 Thin Solid Films 478196
[4]	Varkey A J, Fort A F 1993 Sol. Energy Matt. Sol. Cells 29 253
[5]	Rivers S B, Bernhardt G, Wright M W, Frankel D J, Steeves M M,Lad R J 2007 Thin Solid Films 515 8684
[6]	Fortin E, Weichman F L 1964 Phys. Status Solidi. 5 515
[7]	Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276
[8]	Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang YM, Chen L Y 2004 Thin Solid Films 455-456 438
[9]	Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H2003 J. Appl. Phys. 94 1996
[10]	Qiu J H, Zhou P, Gao X Y, Yu J N, Wang S Y, Li J, Zheng X Y,Yang Y M, Song Q H, Chen L Y 2005 J. Korean Phys. Soc. 46S269
[11]	Gao X Y, Feng H L, Ma J M, Zhang Z Y, Lu J X, Chen Y S, YangS E, Gu J H 2010 Physica B 405 1922
[12]	Gao X Y, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys.Lett. 27 026804
[13]	Feng H L, Liang Y, Gao X Y, Lin Q G, Zhang Z Y, Ma J M, Lu JX, Ning H 2010 Chin. J. Vac. Sci. Technol. 30 211 (in Chinese) [冯红亮, 梁艳, 郜小勇, 林清耿, 张增院, 马姣民, 卢景霄, 宁皓2010 真空科学与技术学报 30 211]
[14]	Zhang Z Y, Gao X Y, Feng H L, Ma J M, Lu J X 2011 Acta Phys.Sin. 60 016110 (in Chinese) [张增院, 郜小勇, 冯红亮, 马姣民, 卢景霄 2011物理学报 60 016110]
[15]	Zhang Z Y, Gao X Y, Feng H L, Ma J M, Lu J X 2011 Acta Phys. Sin. 60 036107 (in Chinese) [张增院, 郜小勇, 冯红亮, 马姣民, 卢景霄 2011物理学报 60 036107]
[16]	Gao X Y, Zhang Z Y, Ma J M, Lu J X, Gu J H, Yang S E 2011Chin. Phys. B 20 026103

施引文献

[1]	Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000Jpn. J. Appl. Phys. 39 980
[2]	Kim J, Fuji H, Yamakama Y, Nakano T, Büchel D, Tominaga J,Atoda N 2001 Jpn. J. Appl. Phys. 40 1634
[3]	Pierson J F, Wiederkehr D, Billard A 2005 Thin Solid Films 478196
[4]	Varkey A J, Fort A F 1993 Sol. Energy Matt. Sol. Cells 29 253
[5]	Rivers S B, Bernhardt G, Wright M W, Frankel D J, Steeves M M,Lad R J 2007 Thin Solid Films 515 8684
[6]	Fortin E, Weichman F L 1964 Phys. Status Solidi. 5 515
[7]	Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276
[8]	Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang YM, Chen L Y 2004 Thin Solid Films 455-456 438
[9]	Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H2003 J. Appl. Phys. 94 1996
[10]	Qiu J H, Zhou P, Gao X Y, Yu J N, Wang S Y, Li J, Zheng X Y,Yang Y M, Song Q H, Chen L Y 2005 J. Korean Phys. Soc. 46S269
[11]	Gao X Y, Feng H L, Ma J M, Zhang Z Y, Lu J X, Chen Y S, YangS E, Gu J H 2010 Physica B 405 1922
[12]	Gao X Y, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys.Lett. 27 026804
[13]	Feng H L, Liang Y, Gao X Y, Lin Q G, Zhang Z Y, Ma J M, Lu JX, Ning H 2010 Chin. J. Vac. Sci. Technol. 30 211 (in Chinese) [冯红亮, 梁艳, 郜小勇, 林清耿, 张增院, 马姣民, 卢景霄, 宁皓2010 真空科学与技术学报 30 211]
[14]	Zhang Z Y, Gao X Y, Feng H L, Ma J M, Lu J X 2011 Acta Phys.Sin. 60 016110 (in Chinese) [张增院, 郜小勇, 冯红亮, 马姣民, 卢景霄 2011物理学报 60 016110]
[15]	Zhang Z Y, Gao X Y, Feng H L, Ma J M, Lu J X 2011 Acta Phys. Sin. 60 036107 (in Chinese) [张增院, 郜小勇, 冯红亮, 马姣民, 卢景霄 2011物理学报 60 036107]
[16]	Gao X Y, Zhang Z Y, Ma J M, Lu J X, Gu J H, Yang S E 2011Chin. Phys. B 20 026103

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