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无序双层六角氮化硼量子薄膜的电子性质

肖化平 陈元平 杨凯科 魏晓林 孙立忠 钟建新

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无序双层六角氮化硼量子薄膜的电子性质

肖化平, 陈元平, 杨凯科, 魏晓林, 孙立忠, 钟建新

Electronic properties of disordered bilayer hexagonal boron nitride quantum films

Xiao Hua-Ping, Chen Yuan-Ping, Yang Kai-Ke, Wei Xiao-Lin, Sun Li-Zhong, Zhong Jian-Xin
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  • 基于安德森紧束缚模型,本文研究了无序双层六角氮化硼量子薄膜的电子性质. 数值计算结果表明在双层都无序掺杂的情况下,六角氮化硼量子薄膜的电子是局域的, 其表现为绝缘体性质;而对于单层掺杂(无论是氮原子还是硼原子)的双层六角氮化硼量子薄膜, 在能谱的带尾出现了持续的迁移率边.这就说明在单层掺杂的双层六角氮化硼量子薄膜中产生了 金属绝缘体转变.这一结果证实了有序-无序分区掺杂的理论模型,为理解及调控双层六角氮化硼量子薄膜 的电子性质提供了有益的理论指导.
    Based on the Anderson tight-binding model, the electronic properties of disordered bilayer hexagonal boron nitride quantum films are investigated. Our numerical results show that the electrons in a disordered bilayer hexagonal boron nitride quantum film are localized, presenting an insulating property. However, for the monolayer disordered bilayer hexagonal boron nitride quantum film, the energy spectrum has persistent mobility edges which are independent of the disorder strength. This indicates that a metal-insulator transition occurs in the monolayer disorder structure. This is similar to the case in an order-disorder separated quantum film. The results could offer useful information for understanding and manipulating the electronic properties of bilayer hexagonal boron nitride quantum films.
    • 基金项目: 国家自然科学基金(批准号: 11074213, 51176161, 51006086, 11074211); 湖南省自然科学基金省市联合项目(批准号: 10JJ9001); 湖南省高校创新平台开放基金项目(批准号: 09K034)和教育部新世纪优秀人才支持计划 (批准号: NCET-10-0169)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074213, 51176161, 51006086, 11074211 ), the Joint Funds of Hunan Provincial Natural Science Foundation of China (Grant No. 10JJ9001), the Open Fund based on innovation platform of Hunan colleges and universities (Grant No. 09K034), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0169).
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    Watanabe K, Taniguchi T, Kanda H 2004 Nat. Mater. 3 404

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    Chen Z G, Zou J, Liu G, Li F, Wang Y, Wang L, Yuan X L, Sekiguchi T, Cheng H M, Lu G Q 2008 ACS Nano. 2 2183

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    Michel K H, Verberck B 2009 Phys. Status Solidi b 246 2802

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    Pereira J M, Vasilopoulos J P, Peeters F M 2007 Nano Lett. 7 946

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  • [1]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666

    [2]

    Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 Proc. Natl. Acad. Sci. USA 102 10451

    [3]

    Gunther S, Danhardt S, Wang B, Bocquet M L, Schmitt S, Wintterlin J 2011 Nano. Lett. 11 1895

    [4]

    Jiao L, Zhang L, Wang X, Diankov G, Dai H 2009 Nature 458 877

    [5]

    Shi Z W, Yang R, Zhang L C, Wang Y, Liu D H, Shi D X, Wang E G, Zhang G Y 2011 Adv. Mater. 23 3061

    [6]

    Hu X H,Xu J M,Sun L T 2012 Acta Phys. Sin. 61 047106 (in Chinese) [胡小会, 许俊敏, 孙立涛 2012 物理学报 61 047106]

    [7]

    Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109

    [8]

    Tworzydlo J, Trauzettel B, Titov M, Rycerz A, Beenakker C W J 2002 Phys. Rev. Lett. 96 246802

    [9]

    Zhang Y, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201

    [10]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V, Firsov A A 2005 Nature 438 19

    [11]

    Balandin1 A A 2011 Nature Materials 10 569

    [12]

    Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V 2005 Proc. Natl Acad. Sci. USA 123 10451

    [13]

    Jin C H, Lin F, Suenaga K, Iijima S 2009 Phys. Rev. Lett. 102 195505

    [14]

    Corso M, Auwärter W, Muntwiler M, Tamai A, Greber T, Osterwalder J 2004 Science 303 217

    [15]

    Pauli T K, Bhattacharya P, Bose D N 1990 Appl. Phys. Lett. 56 2648

    [16]

    Li C, Bando Y, Zhi C Y, Huang Y, Golberg D 2009 Nanotechnology 20 385707

    [17]

    Li j, Gui G, Zhong J X 2008 J. Appl. Phys. 104 094311

    [18]

    Zheng F W, Zhou G, Liu Z R, Wu J, Duan W H, Gu B L, Zhang S B 2008 Phys. Rev. B 78 205415

    [19]

    Watanabe K, Taniguchi T, Kanda H 2004 Nat. Mater. 3 404

    [20]

    Kubota Y, Watanabe K, Tsuda O, Taniguchi T 2007 Science 317 932

    [21]

    Chen Z G, Zou J, Liu G, Li F, Wang Y, Wang L, Yuan X L, Sekiguchi T, Cheng H M, Lu G Q 2008 ACS Nano. 2 2183

    [22]

    Michel K H, Verberck B 2009 Phys. Status Solidi b 246 2802

    [23]

    Pereira J M, Vasilopoulos J P, Peeters F M 2007 Nano Lett. 7 946

    [24]

    Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951

    [25]

    Li J, Gui G, Sun L Z, Zhong J X 2010 Acta Phys. Sin. 59 8820 (in Chinese) [李金, 桂贵, 孙立忠, 钟建新 2012 物理学报 59 8820]

    [26]

    Zhong J X, Stocks G M 2007 Phys. Rev. B 75 033410

    [27]

    Zhong J X, Stocks G M 2006 Nano Lett. 6 128

    [28]

    Shklovskii B I, Shapiro B, Sears B R, Lambrianides P, Shore H B 1993 Phys. Rev. B 47 11487

计量
  • 文章访问数:  5275
  • PDF下载量:  506
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-04-07
  • 修回日期:  2012-05-07
  • 刊出日期:  2012-09-05

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