总剂量辐照条件下部分耗尽半导体氧化物绝缘层N沟道金属氧化物半导体器件的三种kink效应

卓青青; 刘红侠; 彭里; 杨兆年; 蔡惠民

doi:10.7498/aps.62.036105

摘要

研究了0.8 μm SOINMOS晶体管,经过剂量率为50 rad (Si)/s的60Co γ射线辐照后的输出特性曲线的变化趋势. 研究结果表明, 经过制造工艺和版图的优化设计, 在不同剂量条件下, 该样品均不产生线性区kink效应. 由碰撞电离引起的kink效应, 出现显著变化的漏极电压随总剂量水平的提高不断增大. 在高剂量辐照条件下, 背栅ID-VSUB曲线中出现异常的"kink"现象, 这是由辐照诱生的顶层硅膜/埋氧层之间的界面陷阱电荷导致的.

关键词:

Abstract

The variations in ID-VD characteristic of 0.8 μm SOINMOS transistors are studied, which are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. The results show that the linear kink effects of these samples at each dose level ane not presente due to the optimizations of manufacture process and layout design. The drain voltage that corresponds to the impact ionization induced kink effect, increases, with dose level. An anomalous "Kink" effect in the back gate ID-VSUB characteristics of the partially depleted SOINMOS transistors is observed at a high dose level, which is attributed to interface trap states generated at the buried oxide/silicon film interface during irradiation.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子学院, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071

基金项目: 国家自然科学基金(批准号: 61076097, 60936005)、教育部科技创新工程重大项目培育资金(批准号: 708083)和中央高校基本科研业务费专项资金(批准号: 200110203110012)资助的课题.

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian, University, Xi'an 710071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Specialized Research Fund for the Centrial University of Higher Education, China (Grant No. 200110203110012).

参考文献

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[6]	Mercha A, Rafi J M, Simoen E, Augendre E, Claevs C 2003 IEEE Trans. Electron Dev. 50 1675
[7]	Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 575
[8]	Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 25 214
[9]	Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 708
[10]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[11]	Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 物理学报 61 050702]
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[13]	Ushiki T, Kotani K, Funaki T, Kawai K, Ohmi T 200 IEEE Trans. Electron Dev. 47 360
[14]	Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Vol. 4) (Beijing: National Defense Industry Press) p216 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2003 半导体物理学(北京:国防工业出版社) 第216页]

施引文献

[1]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V IEEE Trans. Nucl. Sci. 55 1833
[3]	Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[4]	Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
[5]	Cester A, Gerardin S, Paccagnella A, Schwank J R, Vizkelethy G, Candelori A, Ghidini G 2004 IEEE Trans. Nucl. Sci. 51 3150
[6]	Mercha A, Rafi J M, Simoen E, Augendre E, Claevs C 2003 IEEE Trans. Electron Dev. 50 1675
[7]	Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 575
[8]	Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 25 214
[9]	Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 708
[10]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[11]	Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 物理学报 61 050702]
[12]	Huang R, Zhang G Y, Li Y X, Zhang X 2005 Technology and Application of SOI CMOS (Vol. 1) (Beijing: Science Press) p136 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS技术及其应用(北京: 科学出版社) 第136页]
[13]	Ushiki T, Kotani K, Funaki T, Kawai K, Ohmi T 200 IEEE Trans. Electron Dev. 47 360
[14]	Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Vol. 4) (Beijing: National Defense Industry Press) p216 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2003 半导体物理学(北京:国防工业出版社) 第216页]

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