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等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响

张超 敖建平 姜韬 孙国忠 周志强 孙云

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等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响

张超, 敖建平, 姜韬, 孙国忠, 周志强, 孙云

Influences of plasma activation Se source on selenization of electrodeposited Cu-In-Ga metallic precursors

Zhang Chao, Ao Jian-Ping, Jiang Tao, Sun Guo-Zhong, Zhou Zhi-Qiang, Sun Yun
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  • 使用等离子体活化硒源对电沉积制备的Cu-In-Ga金属预制层进行了硒化处理时, 发现等离子体功率对Cu(In1-xGax)Se2(CIGS)晶粒的生长有重要影响, 当等离子体功率为75 W时, 制备出单一Cu(In0.7Ga0.3)Se2相的CIGS薄膜. 通过对不同衬底温度的等离子体活化硒源硒化的CIGS 薄膜进行了研究与分析, 并与普通硒化后的薄膜进行对比, 发现高活性硒在低温下会促进Ga-Se二元相的生成, 从而有利于Cu(In0.7Ga0.3)Se2单相的生长. 对等离子体硒化后的CIGS薄膜进行了电池制备, 发现单相CIGS薄膜没有显著提高电池性能. 通过优化工艺, 所制备的CIGS电池效率达到了9.4%.
    In this paper, the electrodeposited Cu-In-Ga metallic precursors have been selenized by using plasma activation Se source. The power of plasma has great influence on the grain growth of Cu(In1-xGax)Se2(CIGS). The films were shown to be single phase Cu(In0.7Ga0.3)Se2 when the plasma power was 75W. And the fact that high activity Se promotes the generation of binary selenide phase at a low temperature, thus helping the growth of single phase Cu(In0.7Ga0.3)Se2, was proved by XRD analysis of the films selenized at defferent temperatures and the comparison with the films prepared by ordinary selenization. Solar cells have been prepared and found that the single phase have no influence on battery performance. The efficiency can reach 9.4% by process optimization.
    • 基金项目: 高等学校博士学科点专项科研基金 (批准号: 20090031110031) 资助的课题.
    • Funds: Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090031110031).
    [1]

    Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Progress in Photovoltaics: Research and Applications 19 894

    [2]

    Basol B M, Pinarbasi M, Aksu S, Wang J, Matus Y, Johnson T, Han Y, Narasinham M, Metin B 2008 Proc. 23rd European Photovoltaic Solar Energy Conference Valencia, Spain, September 1-5 2008 p2137

    [3]

    Jensen C L, Tarrant D E, Ermer J H, Pollock G A, 1993 Proceedings of the 23rd IEEE PVSC IEEE Louisville, USA, May 10-14, 1993 p577

    [4]

    He J J, Liu W, Li Z G, Li B Y, Han A J, Li G M, Zhang C,Zhang Y, Sun Y 2012 Acta Phys. Sin. 61 198801 (in Chinese) [何静婧, 刘玮, 李志国, 李博研, 韩安军, 李光旻, 张超, 张毅, 孙云 2012 物理学报 61 198801]

    [5]

    Ribeaucourt L, Savidand G, Lincot D, Chassaing E 2011 Electrochimica Acta 56 6628

    [6]

    Tanaka Y, Akema N, Morishita T, Okumura D, Kushiya K 2002 Proceedings of the 17th European PVSEC, Florence, Italy, 2002 p989

    [7]

    Dejene F B 2009 Solar Energy Materials & Solar Cells 93 577

    [8]

    Ao J P, Yang L, Yan L, Sun G Z, He Q, Zhou Z Q, Sun Y 2009 Acta Phys. Sin. 58 1870 (in Chinese) [敖建平, 杨亮, 闫礼, 孙国忠, 何青, 周志强, 孙云 2009 物理学报 58 1870]

    [9]

    Markus E B, Amy S G, Rick M, James K, Rommel N 2000 Solar Energy Materials & Solar Cells 64 135

    [10]

    Kihwan K, Gregory M H, Trang H, William N S 2012 J. Appl. Phys. 111 083710

    [11]

    Alberts V 2004 Semicond. Sci. Technol. 19 65

    [12]

    Chang C H 1999 Processing and Characterization of Copper Indium Selenide for Photovoltaic Applications: [dissertation] University of Florida, USA, 1999

    [13]

    Kosaraju S, Repins I,Wolden C A 2005 Journal of Vacuum Science & Technology A 23 1202

    [14]

    Shogo I, Hajime S, Akimasa Y, Paul F, Keiichiro S,Koji M, Shigeru N 2007 Appl. Phys. Lett. 91 041902

    [15]

    Zhang C, Ao J P, Wang L, Jiang T, Sun G Z, He Q, Zhou Z Q, Sun Y 2012 Acta Phys. Chim. Sin. 28 1913 (in Chinese) [张超, 敖建平, 王利, 姜韬, 孙国忠, 何青, 孙云 2012 物理化学学报 28 1913]

    [16]

    Marudachalam M, Birkmire R W, Hichri H, Schultz J M, Swartzlander A, Al-Jassim M M 1997 J. Appl. Phys. 82 2896

    [17]

    Hanket G M, Shafarman W N, McCandless B E, Birkmire R W 2007 J. Appl. Phys. 102 074922

    [18]

    Woo K K, Gregory M H, William N S 2009 Proceedings of the 34rd IEEE PVSC IEEE Philadelphia, Pennsylvania, USA, June 7-12, 2009 p000844

    [19]

    Satoshi Y, Brian E M, Robert W B 1993 Proceedings of the 23rd IEEE PVSC IEEE, Louisville, USA, May 10-14, 1993 p607

    [20]

    Dejene F B, Alberts V 2003 J. Mater. Sci.: Mater Electron. 14 89

    [21]

    Bekker J, Albert V, Witcom M J 2001 Thin Solid Films 387 40

    [22]

    Sang D K, Hyeong J K, Kyung H Y, Jinsoo S 2000 Solar Energy Materials & Solar Cells 62 357

    [23]

    Hanna G, Jasenek A, Rau U, Schock H W 2001 Thin Solid Films 387 71

  • [1]

    Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Progress in Photovoltaics: Research and Applications 19 894

    [2]

    Basol B M, Pinarbasi M, Aksu S, Wang J, Matus Y, Johnson T, Han Y, Narasinham M, Metin B 2008 Proc. 23rd European Photovoltaic Solar Energy Conference Valencia, Spain, September 1-5 2008 p2137

    [3]

    Jensen C L, Tarrant D E, Ermer J H, Pollock G A, 1993 Proceedings of the 23rd IEEE PVSC IEEE Louisville, USA, May 10-14, 1993 p577

    [4]

    He J J, Liu W, Li Z G, Li B Y, Han A J, Li G M, Zhang C,Zhang Y, Sun Y 2012 Acta Phys. Sin. 61 198801 (in Chinese) [何静婧, 刘玮, 李志国, 李博研, 韩安军, 李光旻, 张超, 张毅, 孙云 2012 物理学报 61 198801]

    [5]

    Ribeaucourt L, Savidand G, Lincot D, Chassaing E 2011 Electrochimica Acta 56 6628

    [6]

    Tanaka Y, Akema N, Morishita T, Okumura D, Kushiya K 2002 Proceedings of the 17th European PVSEC, Florence, Italy, 2002 p989

    [7]

    Dejene F B 2009 Solar Energy Materials & Solar Cells 93 577

    [8]

    Ao J P, Yang L, Yan L, Sun G Z, He Q, Zhou Z Q, Sun Y 2009 Acta Phys. Sin. 58 1870 (in Chinese) [敖建平, 杨亮, 闫礼, 孙国忠, 何青, 周志强, 孙云 2009 物理学报 58 1870]

    [9]

    Markus E B, Amy S G, Rick M, James K, Rommel N 2000 Solar Energy Materials & Solar Cells 64 135

    [10]

    Kihwan K, Gregory M H, Trang H, William N S 2012 J. Appl. Phys. 111 083710

    [11]

    Alberts V 2004 Semicond. Sci. Technol. 19 65

    [12]

    Chang C H 1999 Processing and Characterization of Copper Indium Selenide for Photovoltaic Applications: [dissertation] University of Florida, USA, 1999

    [13]

    Kosaraju S, Repins I,Wolden C A 2005 Journal of Vacuum Science & Technology A 23 1202

    [14]

    Shogo I, Hajime S, Akimasa Y, Paul F, Keiichiro S,Koji M, Shigeru N 2007 Appl. Phys. Lett. 91 041902

    [15]

    Zhang C, Ao J P, Wang L, Jiang T, Sun G Z, He Q, Zhou Z Q, Sun Y 2012 Acta Phys. Chim. Sin. 28 1913 (in Chinese) [张超, 敖建平, 王利, 姜韬, 孙国忠, 何青, 孙云 2012 物理化学学报 28 1913]

    [16]

    Marudachalam M, Birkmire R W, Hichri H, Schultz J M, Swartzlander A, Al-Jassim M M 1997 J. Appl. Phys. 82 2896

    [17]

    Hanket G M, Shafarman W N, McCandless B E, Birkmire R W 2007 J. Appl. Phys. 102 074922

    [18]

    Woo K K, Gregory M H, William N S 2009 Proceedings of the 34rd IEEE PVSC IEEE Philadelphia, Pennsylvania, USA, June 7-12, 2009 p000844

    [19]

    Satoshi Y, Brian E M, Robert W B 1993 Proceedings of the 23rd IEEE PVSC IEEE, Louisville, USA, May 10-14, 1993 p607

    [20]

    Dejene F B, Alberts V 2003 J. Mater. Sci.: Mater Electron. 14 89

    [21]

    Bekker J, Albert V, Witcom M J 2001 Thin Solid Films 387 40

    [22]

    Sang D K, Hyeong J K, Kyung H Y, Jinsoo S 2000 Solar Energy Materials & Solar Cells 62 357

    [23]

    Hanna G, Jasenek A, Rau U, Schock H W 2001 Thin Solid Films 387 71

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  • PDF下载量:  725
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-09-26
  • 修回日期:  2012-11-28
  • 刊出日期:  2013-04-05

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