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MgO(111)衬底MgB2 超薄膜的制备和性质研究

潘杰云 张辰 何法 冯庆荣

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MgO(111)衬底MgB2 超薄膜的制备和性质研究

潘杰云, 张辰, 何法, 冯庆荣

Properties of MgB2 ultra-thin films fabricated on MgO(111) substrate by hybrid physical-chemical vapor deposition

Pan Jie-Yun, Zhang Chen, He Fa, Feng Qing-Rong
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  • 利用混合物理化学气相沉积法(HPCVD)在MgO(111)衬底上制备了干净的MgB2超导超薄膜. 在背景气体压强, 载气氢气流量以及沉积时间一定的情况下, 改变B2H6的流量, 制备得到不同厚度系列的MgB2超导薄膜样品, 并测量了其超导转变温度 Tc, 临界电流密度Jc等临界参量. 该系列超导薄膜沿c轴外延生长, 表面具有良好的连接性, 且有很高的超导转变温度Tc(0) ≈ 35-38 K和很小的剩余电阻率ρ(42 K) ≈ 1.8-20.3 μΩ·cm-1. 随着膜厚的减小而减小, 临界温度变低, 而剩余电阻率变大. 其中20 nm的样品在零磁场, 5K时的临界电流密度Jc ≈ 2.3×107 A/cm2. 表明了利用HPCVD在MgO(111)衬底上制备的MgB2超薄膜有很好的性能, 预示了其在超导电子器件中广阔的应用前景.
    We fabricate MgB2 ultra-thin films via hybrid physics-chemical vapor deposition technique (HPCVD). Under the same background pressure, the same H2 flow rate and the same deposition time, by changing the B2H6 flow rate, we fabricate a series of ultra-thin films with thickness values ranging from 10 nm to 40 nm. These films grow on MgO(111) substrate, and are all c-axis epitaxial. These films show the good connectivity, a very high Tc(0) ≈ 35-38 K and a very low residual resistivity ρ(42 K) ≈ 1.8-20.3 μΩ·cm-1. As the thickness increases, critical transition temperature also increases and the residual resistivity decreases. The 20 nm film also shows an extremely high critical current density Jc (0 T, 5 K) ≈ 2.3×107 A/cm2, which indicates that the films fabricated by HPCVD are well qualified for device applications.
    • 基金项目: 国家重点基础研究发展计划 (批准号: 2011CB605904)、国家自然科学基金国家基础科学人才培养基金(批准号: J0630311)和国家自然科学基金(批准号: 51177160)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2011CB605904), the Fund for Fostering Talents in Basic Science of the National Natural Science Foundation of China (Grant No. J0630311), and the National Natural Science Foundation of China (Grant No. 51177160).
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    Gol'tsman G N, Kunev O, Chulkova G, Lipatov A, Semenov A, Smirnov K, Voronov B, Dzardanov A 2001 Appl. Phys. Lett. 79 705

    [4]

    Martin D, Natalia D, Boris G, Andrei P 2009 J. Selected Topics Quantum Electronics 14 399

    [5]

    Hadfield R H 2009 Nature Photon 3 696

    [6]

    Nagamatsu J, Nakagawa N, Muranaka T, Zenitani Y, Akimitsu J 2001 Nature 410 63

    [7]

    Shimakage H, Tatsumi M, Wang Z 2008 Supercond. Sci. Technol. 21 095009

    [8]

    Shibata H, Maruyama T, Akazaki T, Takersure H, Honjo T, Tokura Y 2008 Physica C 468 1992

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    Sun X, Huang X, Wang Y Z, Feng Q R 2011 Acta Phys. Sin. 60 087401 (in Chinese) [孙玄, 黄煦, 王亚洲, 冯庆荣 2011物理学报 60 087401]

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    Zhang Y H, Lin Z Y, Dai Q, Li D Y, Wang Y B, Zhang Y, Wang Y, Feng Q R 2011 Supercond. Sci. Technol. 24 015103

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    Ferdeghinia C, Ferrandoa V, Grassanoa G, Ramadana W, Braccinia V, Puttia M, Manfrinettib P, Palenzona A 2002 Physica C 372 1270

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    Ahrens T J 1995 Rock Physics and Phase Relations: A Handbook of Physical Constants (1st Ed.) (Washington: American Geophysical Union) p105

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    Vaglio R, Maglione M G, Capua R D 2002 Supercond. Sci. Technol. 15 1236

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    Wang S F, Zhou Y L, Zhu Y B, Liu Z, Zhang Q, Chen Z H, Lu H B, Dai S Y, Yang G Z 2003 Thin Solid Films 443 120

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    Zeng X H, Pogrebnyakov A V, Kotcharov A, Jones J E, Xi X X, Lysczek E M, Redwing J M, Xu S Y, Li Q, Lettien J, Schlom D G, Tian W, Pan X Q, Liu Z K 2002 Nat. Mater. 1 35

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    Jia Z, Guo J P, Lu Y, Wang X F, Chen C P, Xu J, Wang X N, Zhu M, Feng Q R 2006 Front Phys. China 1 117

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    He T, Cava R J, John M R 2002 Appl. Phys. Lett. 80 290

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    Wang Y Z, Zhuang C G, Sun X, Huang X, Fu Q, Liao Z M, Yu D P, Feng Q R 2009 Supercond. Sci. Technol. 22 125015

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出版历程
  • 收稿日期:  2012-11-15
  • 修回日期:  2012-12-09
  • 刊出日期:  2013-06-05

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