使用PTB7作为阳极修饰层提高有机发光二极管的性能

黄迪; 徐征; 赵谡玲

doi:10.7498/aps.63.027301

摘要

采用poly[[4，8-bis[（2-ethylhexyl）oxy]benzo[1，2-b：4，5-b’]dithiophene-2，6-diyl][3-fluoro-2-[（2-ethylhexyl）carbonyl]thieno[3，4-b]thiophenediyl]]（PTB7）作为有机发光二极管器件的阳极修饰层，制备了结构为indium tin oxide（ITO）/PTB7（不同浓度）/N，N’-Bis（naphthalen-1-yl）-N，N’-bis（phenyl）benzidine（NPB，40 nm）/8-hydroxyquinoline（Alq3，60 nm）/LiF（1 nm）/Al的系列器件，同时研究了不同浓度的PTB7对器件性能的影响. PTB7的最佳浓度为0.25 mg/mL，器件性能得到明显的改善，起亮电压为4.3 V. 当驱动电压为14.6 V时，最大亮度为45800 cd/m2，最大电流效率为9.1 cd/A. 与没有PTB7修饰的器件相比，其起亮电压降低了1.9 V，最高亮度提升了78.5%. 器件性能提高归因于PTB7的插入使得空穴注入和传输能力大大改善.

关键词:

Abstract

Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3, 4-b]thiophenediyl]] (PTB7) is used as an anode modification layer to fabricate organic light-emitting diode (OLED) with the configuration of ITO/PTB7 (with different concentrations)/NPB(40 nm)/Alq3(60 nm)/LiF(1 nm)/Al, and the effect of PTB7 concentration on the performance of device is investigated. The best concentration of PTB7 is 0.25 mg/mL, while the best device turn-on voltage is 4.3 V. For the best device, its maximum luminance is 45800 cd/m2 at a driving voltage of 14.6 V, its maximum current efficiency is 9.1 cd/A, its turn-on voltage is reduced by 1.9 V and the maximum luminance is increased by 78.5% compared with that of the device without PTB7. The improvement of its performance is ascribed to the fact that the hole injection and transport ability are improved by the layer of PTB7.

Keywords:

作者及机构信息

1.
北京交通大学, 发光与光信息技术教育部重点实验室, 北京 100044;

2.
北京交通大学光电子技术研究所, 北京 100044

基金项目: 国家重点基础研究发展计划（批准号：2010CB327704）、国家自然科学基金（批准号：51272022）、教育部新世纪优秀人才支持计划（批准号：NCET-10-0220）和中央高校基本科研业务费专项资金（批准号：2012JBZ001）资助的课题.

Authors and contacts

1.
Key Laboratory of Luminescence and Optical Information of Ministry of Education, Beijing Jiaotong University, Beijing 100044, China;

2.
Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant No. 51272022), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2012JBZ001).

参考文献

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[2]	Luo J X, Xiao L X, Chen Z J, Gong Q H 2008 Appl. Phys. Lett. 93 133301
[3]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[4]	Li F, Tang H, Anderegg J, Shinar J 1997 Appl. Phys. Lett. 70 1233
[5]	Kim Y E, Park H, Kim J J 1996 Appl. Phys. Lett. 69 599
[6]	Li J, Liu J C, Gao C J 2011 Acta Phys. Sin. 60 117106 (in Chinese) [李蛟, 刘俊成, 高从堦 2011 物理学报 60 117106]
[7]	Liang Y, Xu Z, Xia J, Tsai S T, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 E135
[8]	Liu B Q, Tao H, Su Y J, Gao D Y, Lan L F, Zou J H, Peng J B 2013 Chin. Phys. B 22 077303
[9]	Romero D, Schaer M, Zuppiroli L, Cesar B, Francois B 1995 Appl. Phys. Lett. 67 1659
[10]	Roigé A, Campoy Q M, Ossó J, Alonso M, Vega L, Garriga M 2012 Synth. Met. 161 2570
[11]	Kim S H, Jang J, Lee J Y 2006 Appl. Phys. Lett. 89 253501
[12]	Feng X, Huang C, Liu V, Khangura R, Lu Z 2005 Appl. Phys. Lett. 86 143511
[13]	Lee J Y, Kwon J H 2006 Appl. Phys. Lett. 88 183502
[14]	Lee J Y 2006 Appl. Phys. Lett. 88 07351
[15]	Valadares M, Silvestre I, Calado H D R, Neves B R A, Guimarães P S S, Cury L A 2009 Mater. Sci. Eng. C 29 57
[16]	Li G L, He L J, Li J, Li X S, Liang S, Gao M M, Yuan H W 2013 Acta Phys. Sin. 62 197202 (in Chinese) [李国龙, 何力军, 李进, 李学生, 梁森, 高忙忙, 袁海雯 2013 物理学报 62 197202]
[17]	Liu D A, Fina M, Chen Z Y, Chen X B, Liu G, Johnson S, Mao S S 2007 Appl. Phys. Lett. 91 093514
[18]	Day S R, Hatton R A, Chesters M A, Willis M R 2002 Thin Solid Films 410 159
[19]	Zhang F J, Vollmer A, Zhang J, Xu Z, Rabe J P, Koch N 2007 Org. Electron. 8 606
[20]	Song D D 2011 Ph. D. Dissertation (Beijing: Beijing Jiaotong University) (in Chinese) [宋丹丹 2011 博士学位论文(北京: 北京交通大学)]

施引文献

[1]	Liu B Q, Lan L F, Zou J H, Peng J B 2013 Acta Phys. Sin. 62 087302 (in Chinese) [刘佰全, 兰林锋, 邹建华, 彭俊彪 2013 物理学报 62 087302]
[2]	Luo J X, Xiao L X, Chen Z J, Gong Q H 2008 Appl. Phys. Lett. 93 133301
[3]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[4]	Li F, Tang H, Anderegg J, Shinar J 1997 Appl. Phys. Lett. 70 1233
[5]	Kim Y E, Park H, Kim J J 1996 Appl. Phys. Lett. 69 599
[6]	Li J, Liu J C, Gao C J 2011 Acta Phys. Sin. 60 117106 (in Chinese) [李蛟, 刘俊成, 高从堦 2011 物理学报 60 117106]
[7]	Liang Y, Xu Z, Xia J, Tsai S T, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 E135
[8]	Liu B Q, Tao H, Su Y J, Gao D Y, Lan L F, Zou J H, Peng J B 2013 Chin. Phys. B 22 077303
[9]	Romero D, Schaer M, Zuppiroli L, Cesar B, Francois B 1995 Appl. Phys. Lett. 67 1659
[10]	Roigé A, Campoy Q M, Ossó J, Alonso M, Vega L, Garriga M 2012 Synth. Met. 161 2570
[11]	Kim S H, Jang J, Lee J Y 2006 Appl. Phys. Lett. 89 253501
[12]	Feng X, Huang C, Liu V, Khangura R, Lu Z 2005 Appl. Phys. Lett. 86 143511
[13]	Lee J Y, Kwon J H 2006 Appl. Phys. Lett. 88 183502
[14]	Lee J Y 2006 Appl. Phys. Lett. 88 07351
[15]	Valadares M, Silvestre I, Calado H D R, Neves B R A, Guimarães P S S, Cury L A 2009 Mater. Sci. Eng. C 29 57
[16]	Li G L, He L J, Li J, Li X S, Liang S, Gao M M, Yuan H W 2013 Acta Phys. Sin. 62 197202 (in Chinese) [李国龙, 何力军, 李进, 李学生, 梁森, 高忙忙, 袁海雯 2013 物理学报 62 197202]
[17]	Liu D A, Fina M, Chen Z Y, Chen X B, Liu G, Johnson S, Mao S S 2007 Appl. Phys. Lett. 91 093514
[18]	Day S R, Hatton R A, Chesters M A, Willis M R 2002 Thin Solid Films 410 159
[19]	Zhang F J, Vollmer A, Zhang J, Xu Z, Rabe J P, Koch N 2007 Org. Electron. 8 606
[20]	Song D D 2011 Ph. D. Dissertation (Beijing: Beijing Jiaotong University) (in Chinese) [宋丹丹 2011 博士学位论文(北京: 北京交通大学)]

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