GaAs纳米线及GaAs/InxGa1-xAs/GaAs纳米线径向异质结构的无催化选区生长的实验研究

崔建功; 张霞; 颜鑫; 李军帅; 黄永清; 任晓敏

doi:10.7498/aps.63.136103

摘要

利用无催化选区金属有机化学气相沉积（SA-MOCVD）法在GaAs（111）B衬底上分别制备了GaAs纳米线和GaAs/InxGa1-xAs/GaAs纳米线径向异质结构. 系统地研究了生长条件对GaAs纳米线生长的影响. 实验结果显示，GaAs纳米线的形貌和长度依赖于生长温度、AsH3 的分压以及SiO2 掩膜表面的圆孔直径. 因此可以通过调节以上因素来得到高质量的GaAs纳米线. 并且发现扩散是影响无催化选区生长GaAs纳米线的主要机理. 微区光致发光谱（μ-PL）表明，GaAs/InxGa1-xAs/GaAs纳米线径向异质结构被成功合成，室温（300 K）下它的发光波长为913 nm. 这些结果对于GaAs纳米线及其异质结构制备的进一步研究及其在光电子器件中的应用具有很好的参考价值.

关键词:

Abstract

We have investigated the catalyst-free selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs (0x3. GaAs nanowire length would become longer by reducing the mask opening size. Thus we can form the GaAs nanowire uniform arrays with appropriate length and width by controling growth conditions and mask opening size. Then the photoluminescence measurement of GaAs/InxGa1-xAs/GaAs (0x<1) core-shell nanowires is carried out.

Keywords:

GaAs nanowires /
no catalyst selective-area growth /
metal organic chemical vapor deposition (MOCVD)

作者及机构信息

1.
北京邮电大学, 信息光子学与光通信国家重点实验室, 北京 100876

基金项目: 国家重点基础研究发展计划（973计划）（批准号：2010CB327600）、国家自然科学基金（批准号：61020106007，61211120195，61077049和61376019）、北京市自然科学基金（批准号：4142038）、高等学校博士学科点专项科研基金（批准号：20120005110011）和“111”基地计划（批准号：B07005）资助的课题.

Authors and contacts

1.
State Key Laboratory of Information Photonics & Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007, 61211120195, 61077049, 61376019), the Natural Science Foundation of Beijing, China (Grant No. 4142038), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20120005110011), and the 111 Program of China (Grant No. B07005).

参考文献

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施引文献

[1]	Yang P, Yan P, Fardy M 2010 Nano Lett. 10 1529
[2]	Tsakalakos L, Balch J, Fronheiser J, Korevaar B A, Sulima O, Rand J 2007 Appl. Phys. Lett. 91 233117
[3]	Zimmler M A, Voss T, Ronning C, Capasso F 2009 Appl. Phys. Lett. 94 241120
[4]	Duan X, Huang Y, Agarwal R, Lieber M 2003 Nature 421 241
[5]	Ye X, Huang H, Ren X M, Guo J W, Huang Y Q, Wang Q, Zhang X 2011 Acta. Phys. Sin. 60 036103 (in Chinese)[叶显, 黄辉, 任晓敏, 郭经纬, 黄永清, 王琦, 张霞 2011 物理学报 60 036103]
[6]	Plissard S, Larrieu G, Wallart X, Caroff P 2011 Nanotechnology 22 275602
[7]	Yan X, Zhang X, Li J S, L X L, Ren X M, Huang Y Q 2013 Chin. Phys. B 22 076102
[8]	Lv X L, Zhang X, Yan X, Liu X L, Cui J G, Li J S, Huang Y Q, Ren X M 2012 Chin. Phys. Lett. 29 126102
[9]	Mårtensson T, Carlberg P, Borgström M, Montelius L, Seifert W, Samuelson L 2004 Nano Lett. 4 699
[10]	Noborisaka J, Motohisa J, Fukui T 2005 Appl. Phys. Lett. 86 213102
[11]	Paetzelt H, Gottschalch V, Bauer J, Benndorf G, Wagner G 2008 J. Cryst. Growth 310 5093
[12]	Ikejiri K, Noborisaka J, Hara S, Motohisa J, Fukui T 2007 J. Cryst. Growth 298 616
[13]	Noborisaka J, Motohisa J, Hara S, Fukui T 2005 Appl. Phys. Lett. 87 093109
[14]	Hua B, Motohisa J, Ding Y, Hara S, Fukui T 2007 Appl. Phys. Lett. 91 131112
[15]	Yang L, Noborisaka J, Takeda J, Tomioka K, Fukui T 2006 Appl. Phys. Lett. 89 203110
[16]	Huang H, Ren X M, Ye X, Guo J, Wang Q, Zhang X, Cai S, Huang Y 2010 Nanotechnology 21 475602
[17]	Haas F, Sladek K, Winden A, Ahe M, Weirich T E, Rieger T, Lth H, Schäpers Th, Hardtdegen H 2013 Nanotechnology 24 085603
[18]	Borgström M, Deppert K, Samuelson L, Seifert W 2004 J. Cryst. Growth 260 18
[19]	Soci C. Bao X, Aplin D, Wang D 2008 Nano Lett. 8 4275
[20]	Biegelsen D K, Bringans R D, Northrup J E, Swartz L E 1990 Phys. Rev. Lett. 65 452
[21]	Tatematsu H, Sano K, Akiyama T, Nakamura K, Ito T 2008 Phys. Rev. B 77 233306
[22]	Jin M T, Shu H B, Liang P, Cao D, Chen X S, Lu W 2013 J. Phys. Chem. C 177 23349
[23]	Goto H, Nosaki K, Tomioka K, Hara S, Hiruma K, Motohisa J, Fukui T 2009 Appl. Phys. Express 2 035004
[24]	Kim Y, Joyce J, Gao Q, Tan H, Jagadish C, Paladugu M, Zou J, Suvorova A A 2006 Nano Lett. 6 599

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