尺寸相关的弹性常数对应变硅纳米线电学性质的影响

张加宏; 顾芳; 刘清惓; 顾斌; 李敏

doi:10.7498/aps.59.4226

摘要

从Keating模型出发，基于离散化思想建立了计算单晶硅纳米线弹性常数和杨氏模量的半连续原子晶格力学模型. 从微扰理论和形变势理论出发，采用有限差分方法建立了计算不同晶向应变硅纳米线价带结构的数值模型. 结合上述的两个计算模型，进而应用经典弹道传输模型研究了轴向应力和弹性常数对p型硅纳米线弹道晶体管电学特性的影响. 研究结果表明，硅纳米线的弹性常数和杨氏模量呈现尺寸效应，该结果与分子动力学的模拟结果具有很好的一致性. 同时发现尺寸相关的弹性常数对硅纳米线晶体管输运电流的影响强烈依赖于单轴应力对输运电流的影

关键词:

Abstract

Starting from the Keating model, a semi-continuum atomistic lattice model, with directly taking into account the discrete nature in width and thickness direction, is proposed to calculate the elastic constants and Youngs modulus of single crystal silicon nanowires (SiNWs). Based on the six-band k·p theory and the deformation potential concept, and taking into account the quantum-size effect and spin-orbit coupling, a numerical model for the valence band structures of SiNWs in various transport orientations is established by using the finite difference method. Then we use a top-of-the-barrier ballistic field-effect transistor (FET) model to investigate the effects of the uniaxial stress and the elastic constants on ballistic transport properties of the p-type SiNW FETs in combination with the calculation results from the two models mentioned above. It is found that the elastic constants and Youngs modulus of the SiNW are highly size-dependent, which is in good agreement with the available molecular dynamics result. Furthermore, our calculations indicate that the effect of size-dependent elastic constants on ballistic transport current of the SiNW FET strongly depends on the effect of the uniaxial stress on ballistic transport current, because when the uniaxial stress induces a significant change in valence band structures of SiNWs, the size-dependent elastic constants can obviously modify the valence band structure.

Keywords:

作者及机构信息

(1)南京信息工程大学电子与信息工程学院，南京 210044; (2)南京信息工程大学数理学院，南京 210044

基金项目: 国家自然科学基金（批准号：10847147）、南京信息工程大学微纳电子创新团队基金（批准号：N0575003411）、南京信息工程大学科研基金（批准号：20080296）和东南大学微电子机械系统教育部重点实验室研究基金资助的课题.

Authors and contacts

(1)南京信息工程大学电子与信息工程学院，南京 210044; (2)南京信息工程大学数理学院，南京 210044

参考文献

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[29]	］Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 ( in Chinese) ［宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英2009 物理学报 58 4958］

施引文献

[1]	［1］Cui Y, Zhong Z, Wang D, Wang W U, Lieber C M 2003 Nano Lett. 3 149
[2]	［2］Singh N, Agarwal A, Bera L K, Liow T Y, Yang R, Rustagi S C, Tung C H, Kumar R, Lo G Q, Balasubramanian N, Kwong D L 2006 IEEE Electron Dev. Lett. 27 383
[3]	［3］Toriyama T, Tanimoto Y, Sugiyama S 2002 J. Microelectromech. Syst. 11 605
[4]	［4］Feng X L, He R, Yang P, Roukes M L 2007 Nano Lett. 7 1953
[5]	［5］Li X X, Ono T, Wang Y L, Esashi M 2003 Appl. Phys. Lett. 83 3081
[6]	［6］Tabib-Azar M, Nassirou M, Wang R, Sharma S, Kamins T I, Saif Islam M, Stanley Williams R 2005 Appl. Phys. Lett. 87 113102
[7]	［7］Tang Z, Aluru N R 2006 Phys. Rev. B 74 235441
[8]	［8］Guo J G, Zhao Y P 2007 Nanotechnology 18 295701
[9]	［9］Kobayashi M, Hiramoto T 2008 J. Appl. Phys. 103 053709
[10]	］Seike A, Tange T, Sugiura Y, Tsuchida I, Ohta H, Watanabe T, Kosemura D, Ogura A, Ohdomari I 2007 Appl. Phys. Lett. 91 202117
[11]	］Svizhenko A, Leu P W, Cho K 2007 Phys. Rev. B 75 125417
[12]	］Ghetti A, Carnevale G, Rideau D 2007 IEEE Trans. Nanotechn. 6 659
[13]	］Neophytou N, Paul A, Lundstrom M S, Klimeck G 2008 IEEE Trans. Electron Dev. 55 1286
[14]	］Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[15]	］Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[16]	］Keating P N 1966 Phys. Rev. 145 637
[17]	］Sun C T, Zhang H T 2003 J. Appl. Phys. 93 1212
[18]	］Zhang J H, Huang Q A, Yu H, Wang J 2009 J. Phys. D 42 045409
[19]	］Seo W H, Donegan J F 2003 Phys. Rev. B 18 075318
[20]	］Zhang J H, Huang Q A, Yu H, Lei S Y 2008 Chin. Phys. B 17 4292
[21]	］Zhang J H, Huang Q A, Yu H, Wang J, Lei S Y 2009 J. Appl. Phys. 105 086102
[22]	］Cho K H, Yeo K H, Yeoh Y Y, Suk S D, Li M, Lee J M, Kim M S, Kim D W, Park D, Hong B H, Jung Y C, Hwang S W 2008 Appl. Phys. Lett. 92 052102
[23]	］Rahman A, Guo J, Datta S, Lundstrom M 2003 IEEE Trans. Electron Dev. 50 1853
[24]	］Wang J, Huang Q A, Yu H 2008 J. Phys. D 41 165406
[25]	］Wortman J J, Evans R A 1965 J. Appl. Phys. 36 153
[26]	］Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 ( in Chinese) ［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 7228］
[27]	］Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M 2005 Appl. Phys. Lett. 86 093113
[28]	］Marchi A, Gnani E, Reggiani S, Rudan M, Baccarani G 2006 Solid-State Electron. 50 78
[29]	］Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 ( in Chinese) ［宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英2009 物理学报 58 4958］

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