搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

丁国建 郭丽伟 邢志刚 陈耀 徐培强 贾海强 周均铭 陈弘

引用本文:
Citation:

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

丁国建, 郭丽伟, 邢志刚, 陈耀, 徐培强, 贾海强, 周均铭, 陈弘

Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers

Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong
PDF
导出引用
  • 在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻.
    We report the growth and characterization of AlGaN/GaN heterostructures with AlN/GaN superlattices as the barrier layer.It is found that the surface morphology of the heterostructure is greatly improved compared with those using the conventional alloy AlGaN barrier layer.Meanwhile, electric properties of samples with high Al composition (≥40%) are superior to the conventional alloy sanples.Low sheet resistance (251 Ω/□) is obtained for our samples with 40% Al content.
    • 基金项目: 国家自然科学基金(批准号: 10574148), 国家重点基础研究发展计划(批准号: 2006CB921300), 国家高技术研究发展计划(批准号: 2006AA03A106, 2006AA03A107)资助的课题.
    [1]

    Piao G, Shimizu M, Okumura H 2004 Compound Semiconductors 2004, Proceeding of the 31st International Symposium on Compound Semiconductors 184 243

    [2]

    2000 J. Appl. Phys 87 334

    [3]

    J. Cryst. Growth 272 420

    [4]

    Smorchkova I P, Keller S, Heikman S, Elsass C R, Heying B, Fini P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 24 3998

    [5]
    [6]

    Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O 2004 J. Cryst. Growth 272 293

    [7]

    Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 J. Vac. Sci. Technol. B 21 888

    [8]

    Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, DenBaars S P, Mishra U K, Wu Y F 1999 J. Appl. Phys. 86 5850

    [9]

    Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222

    [10]

    Ridley B K, Ambacher O, Eastman L F 2000 Semicond. Sci. Technol. 15 270

    [11]

    Smorchkova I P, Elsass C R, Lbbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520

    [12]

    Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F

    [13]

    Dimitrov R, Murphy M, Smart J, Schaff W, Shealy J R, Eastman L F, Ambacher O, Stutzmann M 2000 J. Appl. Phys. 87 3375

    [14]

    Elass C R, Smorchkova I P, Heying B, Haus E, Poblenz C, Fini P, Maranowski K, Petroff P M, DenBaars S P, Mishra U K, Speck J S, Saxler A, Elhamri S, Mitchel W C 2000 Jpn. J. Appl. Phys. Part 39 L1023

    [15]

    Webb J B, Tang H, Bardwell J A, Coleridge P 2001 Appl. Phys. Lett. 78 3845

    [16]

    Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827

    [17]

    Pophristic M, Guo S P, Peres B 2003 Appl. Phys. Lett. 82 4289

    [18]

    Zhang J P, Wang H M, Gaevski M E, Chen C Q, Fareed Q, Yang J W, Simin G, Khan M A 2003 Appl. Phys. Lett. 80 3542

    [19]

    Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 604

    [20]

    Yamaguchi S, Kosaki M, Watanabe Y, Nitta S, Amano H, Akasaki I 2001 Appl. Phys. Lett. 79 3062

    [21]

    Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467

    [22]

    Kawakami Y, Shen X Q, Piao G, Shimizu M, Okumura H 2007 J. Cryst. Growth 300 168

    [23]

    Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705

    [24]

    Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul’nikov A V, Zavarin E E, Fomin A V, Sizov D S 2004

    [25]

    Jeganathan K, Ide T, Shimizu M, Okumura H 2003 J. Appl. Phys. 94 3260

  • [1]

    Piao G, Shimizu M, Okumura H 2004 Compound Semiconductors 2004, Proceeding of the 31st International Symposium on Compound Semiconductors 184 243

    [2]

    2000 J. Appl. Phys 87 334

    [3]

    J. Cryst. Growth 272 420

    [4]

    Smorchkova I P, Keller S, Heikman S, Elsass C R, Heying B, Fini P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 24 3998

    [5]
    [6]

    Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O 2004 J. Cryst. Growth 272 293

    [7]

    Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 J. Vac. Sci. Technol. B 21 888

    [8]

    Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, DenBaars S P, Mishra U K, Wu Y F 1999 J. Appl. Phys. 86 5850

    [9]

    Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222

    [10]

    Ridley B K, Ambacher O, Eastman L F 2000 Semicond. Sci. Technol. 15 270

    [11]

    Smorchkova I P, Elsass C R, Lbbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520

    [12]

    Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F

    [13]

    Dimitrov R, Murphy M, Smart J, Schaff W, Shealy J R, Eastman L F, Ambacher O, Stutzmann M 2000 J. Appl. Phys. 87 3375

    [14]

    Elass C R, Smorchkova I P, Heying B, Haus E, Poblenz C, Fini P, Maranowski K, Petroff P M, DenBaars S P, Mishra U K, Speck J S, Saxler A, Elhamri S, Mitchel W C 2000 Jpn. J. Appl. Phys. Part 39 L1023

    [15]

    Webb J B, Tang H, Bardwell J A, Coleridge P 2001 Appl. Phys. Lett. 78 3845

    [16]

    Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827

    [17]

    Pophristic M, Guo S P, Peres B 2003 Appl. Phys. Lett. 82 4289

    [18]

    Zhang J P, Wang H M, Gaevski M E, Chen C Q, Fareed Q, Yang J W, Simin G, Khan M A 2003 Appl. Phys. Lett. 80 3542

    [19]

    Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 604

    [20]

    Yamaguchi S, Kosaki M, Watanabe Y, Nitta S, Amano H, Akasaki I 2001 Appl. Phys. Lett. 79 3062

    [21]

    Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467

    [22]

    Kawakami Y, Shen X Q, Piao G, Shimizu M, Okumura H 2007 J. Cryst. Growth 300 168

    [23]

    Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705

    [24]

    Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul’nikov A V, Zavarin E E, Fomin A V, Sizov D S 2004

    [25]

    Jeganathan K, Ide T, Shimizu M, Okumura H 2003 J. Appl. Phys. 94 3260

计量
  • 文章访问数:  8892
  • PDF下载量:  1137
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-12-08
  • 修回日期:  2009-12-22
  • 刊出日期:  2010-04-05

/

返回文章
返回