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反应气压对直流磁控反应溅射制备的氧化银薄膜的结构和光学性质的影响

张增院 郜小勇 冯红亮 马姣民 卢景霄

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反应气压对直流磁控反应溅射制备的氧化银薄膜的结构和光学性质的影响

张增院, 郜小勇, 冯红亮, 马姣民, 卢景霄

Effect of the reactive pressure on the structure and optical properties of silver oxide films deposited by direct-current reactive magnetron sputtering

Zhang Zeng-Yuan, Gao Xiao-Yong, Feng Hong-Liang, Ma Jiao-Min, Lu Jing-Xiao
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  • 利用直流磁控反应溅射技术,通过调节反应气压(RP),在250 ℃衬底温度下制备了一系列氧化银 (AgxO) 薄膜,并利用X射线衍射谱、能量色散谱和分光光度计重点研究了RP对AgxO薄膜的结构和光学性质的影响. 研究结果表明,随着RP从0.5 Pa升高到3.5 Pa,薄膜明显呈现了从两相(AgO+Ag2O)到单相(Ag2O)结构再到两相(Ag2O+AgO)结构的演变. 特
    Using direct-current reactive magnetron sputtering technique, a series of silver oxide (AgxO) films were deposited at a substrate temperature of 250 ℃ by modifying the reactive pressure (RP). Effect of the RP on the film structure and optical properties was investigated by X-ray diffractometry, energy dispersive spectroscopy and spectrophotometry. An evolution of the phase structure from biphased (AgO+Ag2O) to single-phased (Ag2O), and then to biphased (Ag2O+AgO) occurred with the RP increasing from 0.5 to 3.5 Pa for the AgxO films. Single-phase Ag2O film, specially, was deposited at RP=2.5 Pa, which was capable of lowering the threshold of thermal decomposition temperature of the AgxO film. The film transmissivity in transparent region increased with the RP increasing, while the film reflectivity and absorptivity decreased with the RP increasing. This result is attributed to the evolution of the phase structure and the decrease of the film thickness. The absorption edge of the biphased (AgO+Ag2O) AgxO film was located near 2.75 eV, whereas the absorption edge of the single-phase (Ag2O) and Ag2O-dominated biphased (Ag2O+AgO) AgxO film was located near 2.5 eV.
    • 基金项目: 国家自然科学基金(批准号:60807001)和河南省教育厅自然科学研究计划项目(批准号:2010A140017)资助的课题.
    [1]

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    [2]

    Smith D F, Graybill G R, Grubbs R K, Gucinskl J A 1997 J. Power Sources 65 47

    [3]

    Büchel D, Mihalcea C, Fukaya T, Atoda N, Tominaga J, Kikukawa T, Fuji H 2001 Appl. Phys. Lett. 79 620

    [4]

    Tominaga J 2003 J. Phys: Condens. Matt. 15 1101

    [5]

    Pierson J F, Wiederkehr D, Billard A 2005 Thin Solid Films 478 196

    [6]

    Varkey A J, Fort A F 1993 Sol. Energy Matt. Sol. Cells 29 253

    [7]

    Rivers S B, Bernhardt G, Wright M W, Frankel D J, Steeves M M, Lad R J 2007 Thin Solid Films 515 8684

    [8]

    Fortin E, Weichman F L 1964 Phys. Status Solidi. 5 515

    [9]

    Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276

    [10]

    Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang Y M, Chen L Y 2004 Thin Solid Films 455-456 438

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    Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H 2003 J. Appl. Phys. 94 1996

    [12]

    Tominaga J, Nakano T, Atoda N 1992 Extended abstracts of the 39th Spring Meeting of the Japan Society of Applied Physics and Related Societies (Narashino) p 30

    [13]

    Tominaga J, Nakano T , Atoda N 1998 Appl. Phys. Lett. 73 2078

    [14]

    Fukaya T, Tominaga J, Nakano T, Atoda N 1999 Appl. Phys. Lett. 75 3114

    [15]

    Cai D P, Wei C L 2000 Appl . Phys. Lett. 77 1413

    [16]

    Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000 Jpn. J. Appl. Phys. 39 980

    [17]

    Kim J, Fuji H, Yamakama Y, Nakano T, Büchel D, Tominaga J, Atoda N 2001 Jpn. J. Appl. Phys. 40 1634

    [18]

    Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H, Wu J L 2003 Acta. Phys.Chem. Sin. 19 203 (in Chinese) [张西尧、 潘新宇、 张琦锋、 许北雪、 蒋红兵、 刘春玲、 龚旗煌、 吴锦雷 2003 物理化学学报 19 203]

    [19]

    Qiu J H, Zhou P, Gao X Y,Yu J N, Wang S Y, Li J, Zheng X Y, Yang Y M, Song Q H, Chen L Y 2005 J. Korean Phys. Soc. 46 S269

    [20]

    Gao X Y, Feng H L, Ma J M, Zhang Z Y,Lu J X, Chen Y S, Yang S E, Gu J H 2010 Physica B 405 1922

    [21]

    Gao XY, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys. Lett. 27 026804

    [22]

    Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 9 090701

  • [1]

    Passaniti J, Megahed S A 1995 Handbook of Batteries (New York: McGraw-Hill) p122

    [2]

    Smith D F, Graybill G R, Grubbs R K, Gucinskl J A 1997 J. Power Sources 65 47

    [3]

    Büchel D, Mihalcea C, Fukaya T, Atoda N, Tominaga J, Kikukawa T, Fuji H 2001 Appl. Phys. Lett. 79 620

    [4]

    Tominaga J 2003 J. Phys: Condens. Matt. 15 1101

    [5]

    Pierson J F, Wiederkehr D, Billard A 2005 Thin Solid Films 478 196

    [6]

    Varkey A J, Fort A F 1993 Sol. Energy Matt. Sol. Cells 29 253

    [7]

    Rivers S B, Bernhardt G, Wright M W, Frankel D J, Steeves M M, Lad R J 2007 Thin Solid Films 515 8684

    [8]

    Fortin E, Weichman F L 1964 Phys. Status Solidi. 5 515

    [9]

    Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276

    [10]

    Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang Y M, Chen L Y 2004 Thin Solid Films 455-456 438

    [11]

    Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H 2003 J. Appl. Phys. 94 1996

    [12]

    Tominaga J, Nakano T, Atoda N 1992 Extended abstracts of the 39th Spring Meeting of the Japan Society of Applied Physics and Related Societies (Narashino) p 30

    [13]

    Tominaga J, Nakano T , Atoda N 1998 Appl. Phys. Lett. 73 2078

    [14]

    Fukaya T, Tominaga J, Nakano T, Atoda N 1999 Appl. Phys. Lett. 75 3114

    [15]

    Cai D P, Wei C L 2000 Appl . Phys. Lett. 77 1413

    [16]

    Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000 Jpn. J. Appl. Phys. 39 980

    [17]

    Kim J, Fuji H, Yamakama Y, Nakano T, Büchel D, Tominaga J, Atoda N 2001 Jpn. J. Appl. Phys. 40 1634

    [18]

    Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H, Wu J L 2003 Acta. Phys.Chem. Sin. 19 203 (in Chinese) [张西尧、 潘新宇、 张琦锋、 许北雪、 蒋红兵、 刘春玲、 龚旗煌、 吴锦雷 2003 物理化学学报 19 203]

    [19]

    Qiu J H, Zhou P, Gao X Y,Yu J N, Wang S Y, Li J, Zheng X Y, Yang Y M, Song Q H, Chen L Y 2005 J. Korean Phys. Soc. 46 S269

    [20]

    Gao X Y, Feng H L, Ma J M, Zhang Z Y,Lu J X, Chen Y S, Yang S E, Gu J H 2010 Physica B 405 1922

    [21]

    Gao XY, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys. Lett. 27 026804

    [22]

    Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 9 090701

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  • PDF下载量:  689
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-03-13
  • 修回日期:  2010-05-12
  • 刊出日期:  2011-01-15

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