场板抑制GaN高电子迁移率晶体管电流崩塌的机理研究

毛维; 杨翠; 郝跃; 张进成; 刘红侠; 马晓华; 王冲; 张金风; 杨林安; 许晟瑞; 毕志伟; 周洲; 杨凌; 王昊

doi:10.7498/aps.60.017205

摘要

通过实验和数值器件仿真研究了钝化GaN高电子迁移率晶体管(HEMTs)、栅场板GaN HEMTs和栅源双层场板GaN HEMTs电流崩塌现象的物理机理,建立了电流崩塌强度与帽层中载流子浓度、陷阱电离率和电场的内在联系.研究结果表明,场板可以有效调制帽层中横向和纵向电场的强度分布,并可有效调制纵向电场的方向,减弱栅极附近电场强度,增加场板下方电场强度,这会减弱栅极附近自由电子的横向运动,增强场板下方自由电子的纵向运动,进而可以有效调制帽层中自由电子浓度的分布,提高陷阱的电离率,减小器件的电流崩塌.

关键词:

Abstract

The physical mechanisms underlying current collapse effects in the passivated GaN high-electron mobility transistors(HEMTs), the gate field-plated GaN HEMTs and the gate-source field-plated GaN HEMTs are investigated in experiments and numerical device simulations. And the intrinsic relationships of the current collapse with the carrier concentration, the probability of traps ionization, and the electric field within the cap layer are established. Results show that the direction of the longitudinal electric field, as well as the intensity distribution of both the transverse and longitudinal electric fields within the cap layer, can be modulated effectively by the field-plates. The electric field intensity near the gate is reduced and that beneath the field-plates increased. Due to the effects of the field-plates on electric field, the transverse movement of electrons near the gate is reduced, and the longitudinal electron movement beneath the field-plates is increased. These affects the electron concentration distribution and the ionization probability of the traps in the cap layer, which makes field-plates effective for the reduction in the current collapse.

Keywords:

作者及机构信息

(1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071

基金项目: 中央高校基本科研业务费专项资金(批准号:JY10000925002),国家自然科学基金 (批准号:60976068, 60936005)和国家科技重大专项 (批准号:2008ZX01002-002) 资助的课题.

Authors and contacts

(1)School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China

参考文献

[1]	Kumar V, Chen G, Guo S P, Adesida I 2006 IEEE Transactions on Electron Devices 53 1477
[2]	Wu Y F, Moore M, Wisleder T, Saxler A, Parikh P 2006 IEEE 64th Device Research Conference PA, USA, June, 2006 p151
[3]	Wei W, Hao Y, Feng Q, Zhang J C, Zhang J F 2008 Acta Phys. Sin. 57 2456(in Chinese)[魏巍、郝跃、冯倩、张进城、张金凤 2008 物理学报 57 2456]
[4]	Lee J W, Kuliev A S, Adesida I 2008 Japanese Journal of Applied Physics 47 1479
[5]	Koudymov A, Adivarahan V, Yang J, Simin G, Khan A A 2005 IEEE Electron Device Letters 26 704
[6]	Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467(in Chinese)[魏巍、林若兵、冯倩、郝跃 2008 物理学报 57 467]
[7]	Nakajima A, Itagaki K, Horio K 2009 Phys. Status Solidi 6 2840
[8]	Brannick A, Zakhleniuk N A, Ridley B K, Shealy J R, Schaff W J, Eastman L F 2009 IEEE Electron Device Letters 30 436
[9]	Daumiller I, Theron D, Gaquiere C, Vescan A, Dietrich R, Wieszt A, Leier H, Vetury R, Mishra U K, Smorchkova I P, Nguyen N X, Kohn E 2001 IEEE Electron Device Letters 22 62
[10]	Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238(in Chinese)[席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维、韩彦军、罗毅 2008 物理学报 57 7238]
[11]	Tirado J M, Sanchez-Rojas J L, Izpura J I 2007 IEEE Transactions on Electron Devices 54 410
[12]	Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E 2006 IEEE Transactions on Electron Devices 53 2932
[13]	Romero M F, Jimenez A, Sanchez J M, Brana A F, Gonzalez-Posada F, Cuerdo R, Calle F, Munoz E 2008 IEEE Electron Device Letters 29 209
[14]	Yang L, Hao Y, Ma X H, Quan S, Hu G Z, Jiang S G, Yang L Y 2009 Chin. Phys. Lett. 26 117104
[15]	Hu G Z, Yang L, Yang L Y, Quan S, Jiang S G, Ma J G, Ma X H, Hao Y 2010 Chin. Phys. Lett. 27 087302
[16]	Shen L, Palacios T, Coblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars S P, Speck J S, Mishra U K 2006 IEEE Electron Device Letters 27 214
[17]	Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lu L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013(in Chinese)[周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 物理学报 56 6013]
[18]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F 1999 Journal of Applied Physics 85 3222
[19]	Piprek J 2007 Nitride Semiconductor Devices-Principles and Simulation (New York: Wiley-VCH) p24—53
[20]	Faqir M, Verzellesi G, Chini A, Fantini F, Danesin F, Meneghesso G, Zanoni E, Dua C 2008 IEEE Transactions on Device and Materials Reliability 8 240
[21]	Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[22]	Simmons J G, Taylor G W 1971 Phys. Rev. B 4 502

施引文献

[1]	Kumar V, Chen G, Guo S P, Adesida I 2006 IEEE Transactions on Electron Devices 53 1477
[2]	Wu Y F, Moore M, Wisleder T, Saxler A, Parikh P 2006 IEEE 64th Device Research Conference PA, USA, June, 2006 p151
[3]	Wei W, Hao Y, Feng Q, Zhang J C, Zhang J F 2008 Acta Phys. Sin. 57 2456(in Chinese)[魏巍、郝跃、冯倩、张进城、张金凤 2008 物理学报 57 2456]
[4]	Lee J W, Kuliev A S, Adesida I 2008 Japanese Journal of Applied Physics 47 1479
[5]	Koudymov A, Adivarahan V, Yang J, Simin G, Khan A A 2005 IEEE Electron Device Letters 26 704
[6]	Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467(in Chinese)[魏巍、林若兵、冯倩、郝跃 2008 物理学报 57 467]
[7]	Nakajima A, Itagaki K, Horio K 2009 Phys. Status Solidi 6 2840
[8]	Brannick A, Zakhleniuk N A, Ridley B K, Shealy J R, Schaff W J, Eastman L F 2009 IEEE Electron Device Letters 30 436
[9]	Daumiller I, Theron D, Gaquiere C, Vescan A, Dietrich R, Wieszt A, Leier H, Vetury R, Mishra U K, Smorchkova I P, Nguyen N X, Kohn E 2001 IEEE Electron Device Letters 22 62
[10]	Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238(in Chinese)[席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维、韩彦军、罗毅 2008 物理学报 57 7238]
[11]	Tirado J M, Sanchez-Rojas J L, Izpura J I 2007 IEEE Transactions on Electron Devices 54 410
[12]	Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E 2006 IEEE Transactions on Electron Devices 53 2932
[13]	Romero M F, Jimenez A, Sanchez J M, Brana A F, Gonzalez-Posada F, Cuerdo R, Calle F, Munoz E 2008 IEEE Electron Device Letters 29 209
[14]	Yang L, Hao Y, Ma X H, Quan S, Hu G Z, Jiang S G, Yang L Y 2009 Chin. Phys. Lett. 26 117104
[15]	Hu G Z, Yang L, Yang L Y, Quan S, Jiang S G, Ma J G, Ma X H, Hao Y 2010 Chin. Phys. Lett. 27 087302
[16]	Shen L, Palacios T, Coblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars S P, Speck J S, Mishra U K 2006 IEEE Electron Device Letters 27 214
[17]	Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lu L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013(in Chinese)[周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 物理学报 56 6013]
[18]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F 1999 Journal of Applied Physics 85 3222
[19]	Piprek J 2007 Nitride Semiconductor Devices-Principles and Simulation (New York: Wiley-VCH) p24—53
[20]	Faqir M, Verzellesi G, Chini A, Fantini F, Danesin F, Meneghesso G, Zanoni E, Dua C 2008 IEEE Transactions on Device and Materials Reliability 8 240
[21]	Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[22]	Simmons J G, Taylor G W 1971 Phys. Rev. B 4 502

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