飞秒脉冲激光加热金属薄膜的理论和实验研究

马维刚; 王海东; 张兴; 王玮

doi:10.7498/aps.60.064401

摘要

超短脉冲激光加热可应用于研究材料中载能子之间的超快相互作用,同时也广泛应用于超快激光加工.此前人们提出的双温度模型和抛物一步模型都只能用于描述超短脉冲激光加热金属薄膜后热量传递过程的特定片段.基于双温度模型和傅里叶导热定律,提出普适的理论模型可用于完整描述飞秒激光加热金属薄膜/基底时的整个热量传递过程.同时在300 K温度下,采用背面抽运-表面探测瞬态热反射法实验研究了飞秒脉冲激光加热金属薄膜的热量传递过程,理论预测曲线和实验测量结果符合较好,验证了理论模型的正确性.基于此模型测量得到了金薄膜的电子-声子

关键词:

Abstract

Ultrashort pulse laser heating is not only capable of resolving and observing the ultrafast interaction of energy carriers, i.e. electrons, phonons, but also widely applied to material processing, i.e., laser ablation. However, the previous theories, i.e., two-temperature model, parabolic one-step model, can be applied only to some limited segments. In this paper, according to the two-temperature model and Fourier’s law, a general theoretical model is presented for the description of the entire heat relaxation process after the thin metal film deposited on the substrate has been heated by the ultrashort pulse laser. Moreover, the heat conduction process is also experimentally studied by using the rear-pump front-probe transient thermoreflectance technique on Au/glass and Au/SiC at 300 K, and the theoretical prediction accords well with the experimental result, which illustrates the validity of the present theoretical model. Based on the good agreement between theoretical predictions and experimental data, the electron-phonon coupling factor of the thin gold film and thermal boundary conductance of the Au/glass and Au/SiC interfaces are extracted and the measured results are in good agrement with the previous reported values. The electron-phonon coupling factor is close to that of the bulk material and does not exhibit size effect. The thermal boundary conductance is greater than the prediction of diffuse mismatch model, and the reasons responsible for the discrepancies are electrons participating in the interfacial heat conduction, interfacial atom diffusion and inelastic scattering.

Keywords:

作者及机构信息

(1)北京大学微电子学研究院,北京 100871;微米纳米加工技术国家级重点实验室,北京 100871; (2)清华大学工程力学系,热科学与动力工程教育部重点实验室,北京 100084

基金项目: 国家自然科学基金(批准号:50730006,50976053)资助的课题.

Authors and contacts

(1)Institute of Microelectronics, Peking University, Beijing 100871, China; National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Beijing 100871, China; (2)Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China

参考文献

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[2]	Xia Z L, Fan Z X, Shao J D 2006 Acta Phys. Sin. 55 3007 (in Chinese)[夏志林、范正修、邵建达 2006 物理学报 55 3007]
[3]	Kaganov M I, Lifshitz I M, Tanatarov L V 1957 Sov. Phys. JETP 4 173
[4]	Anisimov S, Kapeliovich B, Perelman T 1974 Sov. Phys. JETP 39 375
[5]	Qiu T Q, Tien C L 1993 J. Heat Transf. Trans. ASME 115 835
[6]	Eesley G L 1983 Phys. Rev. Lett. 51 2140
[7]	Xiong G C, Zou Y H, Xia Z J, Yuan P, Lian G J, Li J 1994 Acta Phys. Sin. 43 1860 (in Chinese)[熊光成、邹英华、夏宗炬、袁平、连贵君、李洁 1994 物理学报 43 1860]
[8]	Norris P M, Caffrey A P, Stevens R J, Klopf J M, McLeskey J T, Smith A N 2003 Rev. Sci. Instrum. 74 400
[9]	Cahill D G 2004 Rev. Sci. Instrum. 75 5119
[10]	Costescu R M, Wall M A, Cahill D G 2003 Phys. Rev. B 67 054302
[11]	Schmidt A J, Chen X Y, Chen G 2008 Rev. Sci. Instrum. 79 114902
[12]	Wang H D, Ma W G, Zhang X, Wang W 2010 Acta Phys. Sin. 59 3856 (in Chinese) [王海东、马维刚、张兴、王玮 2010 物理学报 59 3856]
[13]	Kittel C 2005 Introduction to Solid State Physics (8th Ed.) (New York: Wiley) p141
[14]	Qiu T Q, Tien C L 1994 Int. J. Heat Mass Transf. 37 2789
[15]	Majumdar A, Reddy P 2004 Appl. Phys. Lett. 84 4768
[16]	Zhang H X, Guo H, Chen Z, Zhang G B, Li Z H 2007 J. Micromech. Microeng. 17 775
[17]	Hohlfeld J, Wellershoff S S, Güdde J, Conrad U, Jhnke V, Matthias E 2000 Chem. Phys. 251 237
[18]	Norris P M, Hopkins P E 2009 J. Heat Transf.Trans. ASME 131 043207
[19]	Swartz E T, Pohl R O 1989 Rev. Mod. Phys. 61 605
[20]	Hopkins P E, Norris P M, Stevens R J, Beechem T E, Graham S 2008 J. Heat Transf.Trans. ASME 130 062402
[21]	Jagannadham K, Wang Hsin 2002 J. Appl. Phys. 91 1224
[22]	Chen G 1998 Phys. Rev. B 57 14958

施引文献

[1]	Chen J K, Latham W P, Beraun J E 2005 J. Laser Appl. 17 63
[2]	Xia Z L, Fan Z X, Shao J D 2006 Acta Phys. Sin. 55 3007 (in Chinese)[夏志林、范正修、邵建达 2006 物理学报 55 3007]
[3]	Kaganov M I, Lifshitz I M, Tanatarov L V 1957 Sov. Phys. JETP 4 173
[4]	Anisimov S, Kapeliovich B, Perelman T 1974 Sov. Phys. JETP 39 375
[5]	Qiu T Q, Tien C L 1993 J. Heat Transf. Trans. ASME 115 835
[6]	Eesley G L 1983 Phys. Rev. Lett. 51 2140
[7]	Xiong G C, Zou Y H, Xia Z J, Yuan P, Lian G J, Li J 1994 Acta Phys. Sin. 43 1860 (in Chinese)[熊光成、邹英华、夏宗炬、袁平、连贵君、李洁 1994 物理学报 43 1860]
[8]	Norris P M, Caffrey A P, Stevens R J, Klopf J M, McLeskey J T, Smith A N 2003 Rev. Sci. Instrum. 74 400
[9]	Cahill D G 2004 Rev. Sci. Instrum. 75 5119
[10]	Costescu R M, Wall M A, Cahill D G 2003 Phys. Rev. B 67 054302
[11]	Schmidt A J, Chen X Y, Chen G 2008 Rev. Sci. Instrum. 79 114902
[12]	Wang H D, Ma W G, Zhang X, Wang W 2010 Acta Phys. Sin. 59 3856 (in Chinese) [王海东、马维刚、张兴、王玮 2010 物理学报 59 3856]
[13]	Kittel C 2005 Introduction to Solid State Physics (8th Ed.) (New York: Wiley) p141
[14]	Qiu T Q, Tien C L 1994 Int. J. Heat Mass Transf. 37 2789
[15]	Majumdar A, Reddy P 2004 Appl. Phys. Lett. 84 4768
[16]	Zhang H X, Guo H, Chen Z, Zhang G B, Li Z H 2007 J. Micromech. Microeng. 17 775
[17]	Hohlfeld J, Wellershoff S S, Güdde J, Conrad U, Jhnke V, Matthias E 2000 Chem. Phys. 251 237
[18]	Norris P M, Hopkins P E 2009 J. Heat Transf.Trans. ASME 131 043207
[19]	Swartz E T, Pohl R O 1989 Rev. Mod. Phys. 61 605
[20]	Hopkins P E, Norris P M, Stevens R J, Beechem T E, Graham S 2008 J. Heat Transf.Trans. ASME 130 062402
[21]	Jagannadham K, Wang Hsin 2002 J. Appl. Phys. 91 1224
[22]	Chen G 1998 Phys. Rev. B 57 14958

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