AlN纳米线宏观阵列的制备

李志杰; 田鸣; 贺连龙

doi:10.7498/aps.60.098101

摘要

借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3 mm×0.2 mm,直径和长度分布均匀,平均直径约为41 nm,平均长度为1.8 μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线

关键词:

AlN纳米线阵列 /
模板法 /
CVD法 /
SEM

Abstract

AlN nanowire macro-arrays are successfully synthesized and characterized by the second template method. In the article we mainly research the process of preparing the AlN nanowire macro-arrays each with a certain orientation and uniform diameter by the chemical vapor deposition (CVD) method. Metal nanoparticles are prepared by CVD and self-assembled PS sphere templates, and then AlN nanowires macro arrays are compounded by the CVD on template and the metal nanoparticles on the template as a catalyst. The samples are observed by SEM and TEM, AlN nanowire macro-arrays have an area of about 0.3 mm×0.2 mm, they are well distributed, and have an average diameter of about 41 nm, an average length of about 1.8μm, distributed density and coverage of large macro-hexagonal AlN nanowire arrays. So a method to controllably prepare AIN macroscopic nanowire arrays is obtained.

Keywords:

AlN nanowires arrays /
template /
CVD /
SEM

作者及机构信息

(1)沈阳工业大学理学院,沈阳 110870; (2)中国科学院金属研究所,沈阳 110016

基金项目: 国家重点基础研究发展规划(批准号:2006CB600905)和辽宁省自然基金(批准号:20062038)资助的课题.

Authors and contacts

(1)College of Science, Shenyang University of Technology, Shenyang 110178,China; (2)Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

参考文献

[1]	Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta Phys. Sin. 57 5198 (in Chinese)[张轶群、施毅、濮林、张荣、郑有炓 2008 物理学报 57 5198]
[2]	Yu L M, Fan X H, Liu J G 2004 Materials Review 18 112 (in Chinese) [于灵敏、范新会、刘建刚 2004 材料导报 18 112]
[3]	Zuo J, Sun L, Lin C J 2003 Electronic Components & Materials 22 32(in Chinese) [左鹃、孙览、林昌健 2003 电子元件与材料 22 32]
[4]	Yuan S J, Zhou S M, Lu M 2006 Acta Phys. Sin. 55 891 (in Chinese) [袁淑娟、周仕明、鹿牧 2006物理学报 55 891]
[5]	Hernandez-Velez M 2006 Thin Solid Films 495 51
[6]	Viernow J, Petrovykh D Y, Men F K 1999 Appl. Phys. Lett. 74 2125
[7]	Wang L C, Zhang X Z 2005 Chin. Electr. Microse. Soe. 24 252 (in Chinese) [王立晟、章晓中 2005 电子显微镜报 24 252]
[8]	Morkoc S S 1992 Vac. Sci. Technol B 10 1237
[9]	Rubio A, Coikill J L, Cohen M L 1993 Phys. Rev. B 48 11810
[10]	Xu C K, Xue L, Yin C R 2003 Phys. Stat Sol. A 198 329
[11]	Liu Q L, Tanaka T, Hu J Q 2003 Appl. Phys. Lett. 83 4939
[12]	Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto 2006 Nature 441 325
[13]	Yoganand S N, Jagannadham K, Karoui A 2002 Vac. Sci.Technol. A 20 1974
[14]	Tang Y B, Liu Y Q, Sun C H 2007 Mater. Res. 22 2711
[15]	Shen C H, Yang T Z, Xiao C W 2008 Chin. Phys. B 17 2191

施引文献

[1]	Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta Phys. Sin. 57 5198 (in Chinese)[张轶群、施毅、濮林、张荣、郑有炓 2008 物理学报 57 5198]
[2]	Yu L M, Fan X H, Liu J G 2004 Materials Review 18 112 (in Chinese) [于灵敏、范新会、刘建刚 2004 材料导报 18 112]
[3]	Zuo J, Sun L, Lin C J 2003 Electronic Components & Materials 22 32(in Chinese) [左鹃、孙览、林昌健 2003 电子元件与材料 22 32]
[4]	Yuan S J, Zhou S M, Lu M 2006 Acta Phys. Sin. 55 891 (in Chinese) [袁淑娟、周仕明、鹿牧 2006物理学报 55 891]
[5]	Hernandez-Velez M 2006 Thin Solid Films 495 51
[6]	Viernow J, Petrovykh D Y, Men F K 1999 Appl. Phys. Lett. 74 2125
[7]	Wang L C, Zhang X Z 2005 Chin. Electr. Microse. Soe. 24 252 (in Chinese) [王立晟、章晓中 2005 电子显微镜报 24 252]
[8]	Morkoc S S 1992 Vac. Sci. Technol B 10 1237
[9]	Rubio A, Coikill J L, Cohen M L 1993 Phys. Rev. B 48 11810
[10]	Xu C K, Xue L, Yin C R 2003 Phys. Stat Sol. A 198 329
[11]	Liu Q L, Tanaka T, Hu J Q 2003 Appl. Phys. Lett. 83 4939
[12]	Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto 2006 Nature 441 325
[13]	Yoganand S N, Jagannadham K, Karoui A 2002 Vac. Sci.Technol. A 20 1974
[14]	Tang Y B, Liu Y Q, Sun C H 2007 Mater. Res. 22 2711
[15]	Shen C H, Yang T Z, Xiao C W 2008 Chin. Phys. B 17 2191

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