搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

热应力作用降低LPE层中的位错

涂相征

引用本文:
Citation:

热应力作用降低LPE层中的位错

涂相征

REDUCTION OF DISLOCATIONS IN LPE LAYERS DUE TO THE ACTION OF THERMAL STRESSES

TU XIANG-ZHENG
PDF
导出引用
  • 提出由温差造成热剪切应力,引起衬底穿线位错滑移,形成界面位错,从而降低LPE层中位错的模型。稳定自然对流下的温度梯度液相外延,存在衬底厚度方向的温差,能在边缘固定的衬底中造成热剪切应力。生长了厚GaAs和Ga1-xAlxAs层(x暗线缺陷的临界剪切应力。表面腐蚀坑观察表明,外延层位错密度下降,或无位错。界面蚀槽和阴极荧光观察表明,衬底穿线位错在界面弯曲成界面位错。透射电子显微镜观察表明,界面位错多
    We present here a model of the reduction of dislocations in LPB layers by the formation of oriented interfacial dislocations parallel to the surface of the substrate due to the glide motion of substrate threading dislocations which is drived by the thermal stress produced by a temperature difference. In the temprature gradient LPE under a steady natural convection flow, there is a temperature difference across the thickness of the substrte. The temperature difference can cause a thermal shear stress in the fixed substrate. Thick GaAs and Ga1-xAlxAs (x oriented dark line defects. The observation of subface etch pits shows that the epitaxial layers have lower dislocation densities than that of the substrates or are even dislocation-free. The observations of interfacial etch grooves and cathodoluminescence show that substrate threading dislocations bent so that segments run along the interface and a interfacial dislocation network is formed. The transmission electron microscopy observation shows that the majority of these interfacial dislocations are 60° type dislocations and the minority are Lomer dislocations. It implies that it is possible to eliminate all substrate threading dislocations with the introduction of interfacial dislocations by thermal shear stress.
计量
  • 文章访问数:  5897
  • PDF下载量:  584
  • 被引次数: 0
出版历程
  • 收稿日期:  1982-01-19
  • 刊出日期:  2005-07-21

/

返回文章
返回