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本文应用统计物理的方法,讨论了非晶半导体的掺杂效应,特别是在低温下的特性。在荷电的悬挂键模型下,计算了各种情况下的费密能级和电子浓度。并对两类不同的非晶半导体作了详细的讨论。This article discusses doping effects in amorphous semiconductors, especially the properties at low temperatures, using the method of statistical physics. With approximation of single dangling bond, the positions of Fermi level and the electron densities have been calculated for two groups of amorphous semiconductors.
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