-
本文讨论了在磁场中,窄禁带半导体在双光子吸收线附近的三阶非线性,并计算了在带边的几个非线性Faraday旋转峰和Voigt相移峰的位置和相对强度。In this paper, the third order optical nonlinearity of narrow-gap semiconductor near two-photon resonance in a magnetic field is discussed. The theoretical positions and relative strengths of the peaks of nonlinear Faraday rotation and Voigt phase shift near the gap edge are obtained.
计量
- 文章访问数: 6572
- PDF下载量: 541
- 被引次数: 0