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点接触放大器的放大作用

卓济苍 续競存

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点接触放大器的放大作用

卓济苍, 续競存

ON CURRENT AMPLIFICATION IN POINT CONTACT TRANSISTORS

CHUO CHI-TSANG, SHIUH GEN-TWEN
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  • For an n-type transistor, with copper and phosphor-bronze whiskers respectively for its emitter and collector, as the result of electrical forming, the emitter should have a metal-p-n structure. In the first part of this paper, the forward characteristics of such a structure is analized for the whole range of current, with special reference to the variation of the emission ratio γ with the current. The design requirement of a flat γ-Ie curve is discussed. The second part of the paper contains an analysis of current amplification of the collector. The structure assumed is a metal-p-n junction, the diffusion of phosphorus into the structure causing a high barrier for holes at the metal contact. By combining the result of the two parts, a resultant a-Ie, relation is calculated for a typical case. The main factors affecting the performance of the transistor and means of its improvement are discussed in some detail.
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  • 文章访问数:  6270
  • PDF下载量:  558
  • 被引次数: 0
出版历程
  • 收稿日期:  1957-09-14
  • 刊出日期:  1958-02-05

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