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本文计算了AlGaAs/GaAs异质结在大栅压下,出现“平行电导效应”时的栅压与平行导电层中电荷的关系。由此给出了高电子迁移率晶体管(HEMT)在大栅压时跨导变化的特性,与实验进行了比较,符合较好。The relationship between the gate voltage and charges in the parallel conducting layer has been calculated for AlGaAs/GaAs heterojunction, which is at large gate voltage and has the effect of parallel conductance. Then, the transconductance characteristics of the high electron mobility transistor (HEMT) is obtained. The comparison of theory and experiments are also made, and we find that they are in good agreement.
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