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本文首先给出了180keV的N2+注入Si的X射线衍射(XRD)分布,然后用Levenberg-Marquardt最优化方法模拟实验曲线。根据XRD运动学理论,在我们给出的试探胁变函数和多层模型的基础上,用自编程序计算给出了晶格胁变随注入深度、剂量和退火温度的变化。最后我们对实验和计算结果进行了初步的分析讨论。The distributions of X-ray diffraction (XRD) of N2+ (180 keV) implanted Si are presented. On the basis of trial and error strain function and multilayer model, according to kinematic theory of XRD, with Levenberg-Marqardt optimization method to simulate experimental curve we computed the strain distribution as the functions of depth, dose and annealing temperature. The results are analysed and discussed.
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