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本文报道了用重离子背散射探测表面、近表面微量重元素的新方法。通过选择入射离子种类,使入射离子原子量M1等于或略大于基体原子量M2,利用弹性散射运动学实现自动排除探测系统的脉冲堆积现象。实验结果表明利用能量为3MeVSi离子背散射,测量基体Si中注As的灵敏度优于2×1012原子/cm2;对基体Si表面的杂质元素Au,探测灵敏度高达2.2×109原子/cm2。We describe a new technique for MeV heavy-ion backscattering analysis of trace heavy elements on the surface and near surface. Pulse pileup problems are eliminated by choice of incidence ion mass M1, which is the same as or larger then that of bulk atom M2. Using 3 MeV Si beam, we could measure quantities of arsenic implanted in silicon down to 2×1012 atoms/cm2. Experimental results also show that sensitivity for impurity element on silicon substrate is as high as 2.2 ×109 atoms/cm2 for Au.
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