GaN/AlxGa1-xN异质结二维电子气的磁电阻研究

王威; 周文政; 韦尚江; 李小娟; 常志刚; 林铁; 商丽燕; 韩奎; 段俊熙; 唐宁; 沈波; 褚君浩

doi:10.7498/aps.61.237302

摘要

通过对GaN/AlxGa1-xN异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因. 结果表明,整个磁场范围的负磁电阻是由电子-电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正.用拟合的方法得到了电子-电子相互作用项以及平行电导层的载流子浓度和迁移率, 并用不同的计算方法对拟合结果进行了验证.

关键词:

The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.

Keywords:

作者及机构信息

1.
广西大学物理科学与工程技术学院, 南宁 530004;

2.
中国科学院上海技术物理研究所红外物理国家重点实验室, 上海 200083;

3.
华东师范大学信息科学与技术学院极化材料与器件教育部重点实验室, 上海 200241;

4.
北京大学物理学院人工微结构与介观物理国家重点实验室, 北京 100871

基金项目: 国家重点基础研究发展计划(批准号: 2007CB924900)和国家自然科学基金(批准号: 60906045)资助的课题.

Authors and contacts

1.
College of Physics Science and Technology, Guangxi University, Nanning 530004, China;

2.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

3.
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;

4.
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2007CB924900), the National Natural Science Foundation of China (Grant No. 60906045).

参考文献

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[14]	Grayson M, Fischer F 2005 J. Appl. Phys. 98 013709
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[16]	van der Burgt M, Karavolas V C, Peeters F M, Singleton J, Nicholas R J, Herlach F, Harris J J, van Hove M, Borghs G 1995 Phys. Rev. B 52 12218
[17]	Hurd C M, McAlister S P, McKinnon W R, Stewart B R, Day D J, Mandeville P, Spring Thorpe A J 1988 J. Appl. Phys. 63 4706
[18]	Kane M J, Apsley N, Anderson D A, Taylor L L, Kerr T 1985 J. Phys. C 18 5629
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[20]	Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172115
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[23]	van Houten H, Williamson J G, Broekaart M E I, Foxon C T, Harris J J 1988 Phys. Rev. B 37 2756
[24]	Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251
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[26]	Minkov G M, Germanenko A V, Rut O E, Sherstobitov A A, Larionova V A, Bakarov A K, Zvonkov B N 2006 Phys. Rev. B 74 045314
[27]	Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251

施引文献

[1]	Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1760 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1760]
[2]	Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta Phys. Sin. 60 117304 (in Chinese) [王平亚, 张金风, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]
[3]	Nakamura S, Mukai T, Senoh M 1994 J. Appl. Phys. 76 8189
[4]	Bulman G E, Doverspike K, Sheppard S T, Weeks T W, Kong H S, Dieringer H M, Edmond J A, Brown J D, Swindell J T, Schetzina J F 1997 Electron. Lett. 33 1556
[5]	Khan M A, Chen Q, Shur M S, McDermott B T, Higgins J A, Burm J, Schaff W J, Eastman L F 1996 IEEE Electron Device Lett. 17 584
[6]	Wu Y-F, Keller B P, Keller S, Kapolnek D, Kozodoy P, DenBaars S P, Mishra U K 1996 Appl. Phys. Lett. 69 1438
[7]	Juang J R, Huang T-Y, Chen T M, Lin, Kim G H, Lee Y, Liang C T, Hang D R, Chen Y F, Chyi J I 2003 J. Appl. Phys. 94 3181
[8]	Elsass C R, Smorchkova I P, Heying B, Haus E, Fini P, Maranowski K, Ibbetson J P, Keller S, Petroff P M, DenBaars S P, Mishra U K, Speck J S 1999 Appl. Phys. Lett. 74 3528
[9]	Gao K H, Zhou W Z, Zhou Y M, Yu G, Lin T, Guo S L, Chu J H, Dai N, Gu Y, Zhang Y G, Austing D G 2009 Appl. Phys. Lett. 94 152107
[10]	Liang C T, Lin L H, Huang J Z, Zhang Z Y, Sun Z H, Chen K Y, Chen N C, Chang P H, Chang C A 2007 Appl. Phys. Lett. 90 022107
[11]	Altshuler B, Khmelnitskii D, Larkin A, Lee P 1980 Phys. Rev. B 22 5142
[12]	Hikami S, Larkin A, Nagaoka Y 1980 Prog. Theor. Phys. 63 707
[13]	Han K, Shen B, Tang N, Tang Y Q, He X W, Qin Z X, Yang Z J, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2007 Phys. Lett. A 366 267
[14]	Grayson M, Fischer F 2005 J. Appl. Phys. 98 013709
[15]	Jo J, Sen Y W, Engel L W, Santos M B, Shayegan M 1992 Phys. Rev. B 46 9776
[16]	van der Burgt M, Karavolas V C, Peeters F M, Singleton J, Nicholas R J, Herlach F, Harris J J, van Hove M, Borghs G 1995 Phys. Rev. B 52 12218
[17]	Hurd C M, McAlister S P, McKinnon W R, Stewart B R, Day D J, Mandeville P, Spring Thorpe A J 1988 J. Appl. Phys. 63 4706
[18]	Kane M J, Apsley N, Anderson D A, Taylor L L, Kerr T 1985 J. Phys. C 18 5629
[19]	Tang N, Shen B, Wang M J, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172112
[20]	Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172115
[21]	Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411
[22]	Simmons M Y, Hamilton A R, Pepper M, Linfield E H, Rose P D, Ritchie D A 2000 Phys. Rev. Lett. 84 2489
[23]	van Houten H, Williamson J G, Broekaart M E I, Foxon C T, Harris J J 1988 Phys. Rev. B 37 2756
[24]	Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251
[25]	Gilbertson A M, Buckle P D, Emeny M T, Ashley T, Cohen L F 2011 Phys. Rev. B 84 075474
[26]	Minkov G M, Germanenko A V, Rut O E, Sherstobitov A A, Larionova V A, Bakarov A K, Zvonkov B N 2006 Phys. Rev. B 74 045314
[27]	Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251

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