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Based on magnetic tunnel junctions (MTJs), the magnetic random access memory with the pseudo-spin value film model, the annular structure with slanted cuts is used as free layer and the way to vary coercivity by changing thickness is discarded. With this improvement, the area resistance of the MTJs is reduced. The analysis of the cuts on the annular layer generated from the secondary effects of deposition in the IC process, is made by the micromagnetic simulations. The magnetization reversal characteristics from the analysis reveal the properties of low crosstalk, low RA, high magnetic reluctance, and strong anti-interference.
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Keywords:
- free layer /
- micromagnetic /
- magnetization reversal /
- VMRAM
[1] Daughton J M 1997 J. Appl. Phys. 81 3758
[2] IBM 2000 Patent US 6097625
[3] Li Y B, Wei F L, Yang Z 2009 Physics (in Chinese) [李彦波, 魏福林, 杨正 2009 物理]
[4] Hayakawa J, Ikeda S, Lee Y Me 2006 Appl. Phys. Lett. 89 232510
[5] WangY, Zeng Z M, Han X Fetal 2007 Phys. Rev. B 75 214424
[6] Nagasaka K, SeyamaY, KondoRetal 2001 Fujitsu Sci. Tech. J. 37 192
[7] Tsunekawa K, Djayaprawira D D, Nagai M 2005 Appl. Phys. Lett. 87 072503
[8] Weiss P Journ 1907 de Phys. et Radium 6 661
[9] Yin A J, Li J, Jian W, Bennett A J, Xu J M 2001 Appl. Phys. Lett. 79 1039
[10] Waehowiak A, Wiebe J, Bode M, Pietzseh O, Morgenstern M, Wiesendanger R 2002 Science 298 577
[11] Zhu J G, Zheng Y F, Prinz G A 2000 J. Appl. Phys. 87 6668
[12] Zhu Xiaobin, Allwood DanA, Gang Xiong 2005 Appl. Phys. Lett. 87 062503
[13] Zhang H w, Rong C B, Zhang J, Zhang S Y , Shen B C 2003 Acta Phys. Sin. 52 748 (in Chinese) [张宏伟, 荣传兵, 张健, 张绍英, 沈保根 2003 物理学报 52 718]
[14] Heyderman L J, Vaz C A F, Bland J A C 2004 Microelectronie Engineering 73 780
[15] Werner Scholz, Ph. D. Dissertation (Eingereicht an der Technischen Universität Wien)
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[1] Daughton J M 1997 J. Appl. Phys. 81 3758
[2] IBM 2000 Patent US 6097625
[3] Li Y B, Wei F L, Yang Z 2009 Physics (in Chinese) [李彦波, 魏福林, 杨正 2009 物理]
[4] Hayakawa J, Ikeda S, Lee Y Me 2006 Appl. Phys. Lett. 89 232510
[5] WangY, Zeng Z M, Han X Fetal 2007 Phys. Rev. B 75 214424
[6] Nagasaka K, SeyamaY, KondoRetal 2001 Fujitsu Sci. Tech. J. 37 192
[7] Tsunekawa K, Djayaprawira D D, Nagai M 2005 Appl. Phys. Lett. 87 072503
[8] Weiss P Journ 1907 de Phys. et Radium 6 661
[9] Yin A J, Li J, Jian W, Bennett A J, Xu J M 2001 Appl. Phys. Lett. 79 1039
[10] Waehowiak A, Wiebe J, Bode M, Pietzseh O, Morgenstern M, Wiesendanger R 2002 Science 298 577
[11] Zhu J G, Zheng Y F, Prinz G A 2000 J. Appl. Phys. 87 6668
[12] Zhu Xiaobin, Allwood DanA, Gang Xiong 2005 Appl. Phys. Lett. 87 062503
[13] Zhang H w, Rong C B, Zhang J, Zhang S Y , Shen B C 2003 Acta Phys. Sin. 52 748 (in Chinese) [张宏伟, 荣传兵, 张健, 张绍英, 沈保根 2003 物理学报 52 718]
[14] Heyderman L J, Vaz C A F, Bland J A C 2004 Microelectronie Engineering 73 780
[15] Werner Scholz, Ph. D. Dissertation (Eingereicht an der Technischen Universität Wien)
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