Ge20Sb15Se65薄膜的热致光学特性变化研究

宗双飞; 沈祥; 徐铁峰; 陈昱; 王国祥; 陈芬; 李军; 林常规; 聂秋华

doi:10.7498/aps.62.096801

摘要

采用磁控溅射法制备了Ge20Sb15Se65薄膜, 研究热处理温度(150—400 ℃)对薄膜光学特性的影响. 通过分光光度计、X射线衍射仪、显微拉曼光谱仪对热处理前后薄膜样品的光学特性和微观结构进行了表征, 并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数. 结果表明当退火温度(Ta)小于薄膜的玻璃转化温度(Tg)时,薄膜的光学带隙(Egopt)随着退火温度的增加由1.845 eV上升至1.932 eV, 而折射率由2.61降至2.54; 当退火温度大于薄膜的玻璃转化温度时,薄膜的光学带隙随退火温度的增加由1.932 eV降至1.822 eV, 折射率则由2.54增至2.71. 最后利用Mott和Davis提出的非晶材料由非晶到晶态的结构转变模型对结果进行了解释, 并通过薄膜XRD和Raman光谱进一步验证了结构变化是薄膜热致变化的重要原因.

关键词:

Abstract

The amorphous Ge20Sb15Se65 thin film was prepared by magnetron sputtering deposition technique. Effect of heat treatment temperature in the range of 150—400 ℃ on the optical properties of Ge20Sb15Se65 thin films has been investigated. The microstructure and optical properties of the films were characterized by UV-Vis, Raman spectroscopy and XRD, the optical constant was calculated using the Swanepoel method and Tauc's law from the optical transmission spectra. Results indicate that when the annealing temperature (Ta) is lower than the glass transition temperature (Tg), the optical band gap (Egopt) increases from 1.845 to 1.932 eV, and the refractive index decreases from 2.61 to 2.54, while the optical band gap decreases from 1.932 to 1.822 eV and the refractive index increases from 2.54 to 2.71 with a further increase of Ta. The results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structural transformations. It is well consistent with the results of structure analysis by XRD and Raman spectroscopy.

Keywords:

作者及机构信息

1.
宁波大学红外材料及器件实验室, 宁波 315211

基金项目: 国家自然科学基金(批准号:61205181,61008041)、宁波市新型光功能材料与器件创新团队(批准号:2009B21007)、宁波市自然基金(批准号:2011A610092)、浙江省大学生科技创新活动计划(批准号:2012R405052)、宁波大学胡岚博士基金和王宽诚幸福基金资助的课题.

Authors and contacts

1.
Laboratory of Infrared Material and Devices, Ningbo University, Ningbo 315211, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61008041, 61205181), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Students Science and Technology Innovation Program of Zhejiang Province, China (Grant No. 2012R405052), and K. C. Wong Magna Fund in Ningbo University.

参考文献

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[3]	Li Z B, Lin C G, Nie Q H, Xu T F, Dai S X 2012 Acta Phys. Sin. 61 104207 (in Chinese) [李卓斌, 林常规, 聂秋华, 徐铁峰, 戴世勋 2012 物理学报 61 104207]
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[6]	Lin C G, Li Z B, Tan H J, Ni W H, Li Y Y, Dai S X 2012 Acta Phys. Sin. 61 154212 (in Chinese) [林常规, 李卓斌, 覃海娇, 倪文豪, 李燕颖, 戴世勋 2012 物理学报 61 154212]
[7]	Hô N, Laniel J M, ValléeR a, Villeneuve A 2003 Opt. Lett. 28 965
[8]	Abdel-Rahim M A, Moharram A H, Dongol M, Hafiz M M 1990 Journal of Physics and Chemistry of Solids 51 355
[9]	Shen X, Nie Q H, Xu T F, Dai S X, Wang X S, Wu L G 201 Acta Phys. Sin. 59 2045 (in Chinese) [沈祥, 聂秋华, 徐铁峰, 戴世勋, 王训四, 吴礼刚 2010 物理学报 59 2045]
[10]	Anderson T, Petit L, Carlie N, Choi J, Hu J, Agarwal A, Kimerling L, Richardson K, Richardson M 2008 Opt. Express 16 20081
[11]	Shaaban E R, Kaid M A, Moustafa E S, Adel A 2008 Journal of Physics D: Applied Physics 41 125301
[12]	Nazabal V, Charpentier F, Adam J-L, Nemec P, Lhermite H, Brandily-Anne M-L, Charrier J, Guin J-P, Moréac A 2011 International Journal of Applied Ceramic Technology 8 990
[13]	Swanepoel R 1985 J. Opt. Soc. Am. A 2 1339
[14]	Manifacier J C, Gasiot J, Fillard J P 1976 Journal of Physics E: Scientific Instruments 9 1002
[15]	Lucovsky G 1977 Phys. Rev. B 15 5762
[16]	Kincl M, Tichý L 2008 Materials Chemistry and Physics 110 322
[17]	Tanaka K 1980 Thin Solid Films 66 271
[18]	Aly K A, Abousehly A M, Osman M A, Othman A A 2008 Physica B: Condensed Matter 403 1848
[19]	Farid A M, El-Zawawi I K, Ammar A H 2012 Vacuum 86 1255
[20]	Mott N F, Davis E A 1979 Electronic Processes in Non-Crystalline Materials
[21]	Hasegawa S, Kitagawa M 1978 Solid State Communications 27 855
[22]	Petit L, Carlie N, Richardson K, Guo Y, Schulte A, Campbell B, Ferreira B, Martin S 2005 Journal of Physics and Chemistry of Solids 66 1788
[23]	Jackson K, Briley A, Grossman S, Porezag D V, Pederson M R 1999 Phys. Rev. B 60 R14985
[24]	Němec P, Frumarová B, Frumar M 2000 Journal of Non-Crystalline Solids 270 137
[25]	Maeda K, Sakai T, Sakai K, Ikari T, Munzar M, Tonchev D, Kasap S, Lucovsky G 2007 Journal of Materials Science: Materials in Electronics 18 367

施引文献

[1]	Seddon A B 1995 Journal of Non-Crystalline Solids 184 44
[2]	Quémard C, Smektala F, Couderc V, Barthélémy A, Lucas J 2001 Journal of Physics and Chemistry of Solids 62 1435
[3]	Li Z B, Lin C G, Nie Q H, Xu T F, Dai S X 2012 Acta Phys. Sin. 61 104207 (in Chinese) [李卓斌, 林常规, 聂秋华, 徐铁峰, 戴世勋 2012 物理学报 61 104207]
[4]	Gai X, Han T, Prasad A, Madden S, Choi D-Y, Wang R, Bulla D, Luther-Davies B 2010 Opt. Express 18 26635
[5]	Zakery A, Elliott S R 2003 Journal of Non-Crystalline Solids 330 1
[6]	Lin C G, Li Z B, Tan H J, Ni W H, Li Y Y, Dai S X 2012 Acta Phys. Sin. 61 154212 (in Chinese) [林常规, 李卓斌, 覃海娇, 倪文豪, 李燕颖, 戴世勋 2012 物理学报 61 154212]
[7]	Hô N, Laniel J M, ValléeR a, Villeneuve A 2003 Opt. Lett. 28 965
[8]	Abdel-Rahim M A, Moharram A H, Dongol M, Hafiz M M 1990 Journal of Physics and Chemistry of Solids 51 355
[9]	Shen X, Nie Q H, Xu T F, Dai S X, Wang X S, Wu L G 201 Acta Phys. Sin. 59 2045 (in Chinese) [沈祥, 聂秋华, 徐铁峰, 戴世勋, 王训四, 吴礼刚 2010 物理学报 59 2045]
[10]	Anderson T, Petit L, Carlie N, Choi J, Hu J, Agarwal A, Kimerling L, Richardson K, Richardson M 2008 Opt. Express 16 20081
[11]	Shaaban E R, Kaid M A, Moustafa E S, Adel A 2008 Journal of Physics D: Applied Physics 41 125301
[12]	Nazabal V, Charpentier F, Adam J-L, Nemec P, Lhermite H, Brandily-Anne M-L, Charrier J, Guin J-P, Moréac A 2011 International Journal of Applied Ceramic Technology 8 990
[13]	Swanepoel R 1985 J. Opt. Soc. Am. A 2 1339
[14]	Manifacier J C, Gasiot J, Fillard J P 1976 Journal of Physics E: Scientific Instruments 9 1002
[15]	Lucovsky G 1977 Phys. Rev. B 15 5762
[16]	Kincl M, Tichý L 2008 Materials Chemistry and Physics 110 322
[17]	Tanaka K 1980 Thin Solid Films 66 271
[18]	Aly K A, Abousehly A M, Osman M A, Othman A A 2008 Physica B: Condensed Matter 403 1848
[19]	Farid A M, El-Zawawi I K, Ammar A H 2012 Vacuum 86 1255
[20]	Mott N F, Davis E A 1979 Electronic Processes in Non-Crystalline Materials
[21]	Hasegawa S, Kitagawa M 1978 Solid State Communications 27 855
[22]	Petit L, Carlie N, Richardson K, Guo Y, Schulte A, Campbell B, Ferreira B, Martin S 2005 Journal of Physics and Chemistry of Solids 66 1788
[23]	Jackson K, Briley A, Grossman S, Porezag D V, Pederson M R 1999 Phys. Rev. B 60 R14985
[24]	Němec P, Frumarová B, Frumar M 2000 Journal of Non-Crystalline Solids 270 137
[25]	Maeda K, Sakai T, Sakai K, Ikari T, Munzar M, Tonchev D, Kasap S, Lucovsky G 2007 Journal of Materials Science: Materials in Electronics 18 367

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