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报道含F铋系超导块材的XPS,红外光声光谱及晶格常数等变化,确定了F进入元胞O(2)的位置。指出Cu—F和Pb—F键的形成,加强Cu-O与Bi-O面之间的耦合作用和化学压力,并使Fermi面附近电子态密度增大,从而使含F铋系的Tc0有显著的提高。According to the changes of XPS, IR and lattice constants in bismuth (lead) system superconductor, the location of F substitution in O(2) has been determined. The Tc0 in fluorme doped bismuth (lead) system superconductor can be inproved greatly with the formation of Pb-F and Cu-F, the strengthening of coherence between Cu-O and Bi-O plane, and the increasing of chemical pressure and the density of electronic states.
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