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BaTiO3/p-Si异质结的整流特性和光诱导特性的研究

杨世海 金克新 王晶 罗炳成 陈长乐

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BaTiO3/p-Si异质结的整流特性和光诱导特性的研究

杨世海, 金克新, 王晶, 罗炳成, 陈长乐

Rectifying behavior and photocarrier injection effect in BaTiO3/p-Si heterostructure

Yang Shi-Hai, Jin Ke-Xin, Wang Jing, Luo Bing-Cheng, Chen Chang-Le
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  • 利用脉冲激光沉积法成功制备了BaTiO3/p-Si异质结, 该异质结在80–300 K 显示出了良好的整流特性和光诱导特性. 开启电压随着温度的升高而逐渐降低. 利用不同频率的光子辐照样品, 观察到明显的光电导效应. 且随着照射光子能量的增大, 结电流也相应变大, 光诱导效应越明显. BaTiO3薄膜电阻-温度(R-T) 曲线显示氧缺陷条件下BaTiO3薄膜具有良好的半导体特性.
    A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (VD) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO3 is an n-type semiconductor.
    • 基金项目: 国家自然科学基金(批准号: 61078057, 51172183, 51202195); 陕西省自然科学基金(批准号: 2011JM6013, 2012JQ8013); 航空基金(批准号: 2011ZF53065)和 西北工业大学基础研究基金(批准号: JC201155, JC20120246, JC20110270)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61078057, 51172183, 51202195), the Natural Science Foundation of Shaanxi Province, China (Grant Nos. 2011JM6013, 2012JQ8013), Aviation Foundation of China (Grant No. 2011ZF53065), and the NPU Foundation for Fundamental Research, China (Grant Nos. JC201155, JC20120246, JC20110270).
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    Hunter D, Lord K, Williams T M, Zhang K, Pradhan A K, Sahu D R, Huang J L 2006 Appl. Phys. Lett. 89 092102

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    Lee M B, Kawasaki M, Yoshimoto M, Koinuma H 1995 Appl. Phys. Lett. 66 1331

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    Li G Q, Lai P T, Zeng S H, Huang M Q, Liu B Y 1995 Appl. Phys. Lett. 66 2436

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    Hao L. Z, Xue Q. Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 Appl. Phys. Lett. 91 212105

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    Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J, Yang G Z 2008 Appl. Phys. Lett. 92 071113

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    Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese) [王建元, 陈长乐, 高国棉, 韩立安, 金克新 2006 物理学报 55 6617]

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    Cardona M 1965 Phys. Rev. A 140 651

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    Berglund C N, Braun H J 1967 Phys. Rev. 164 790

  • [1]

    Roy D, Krupanidhi S B 1992 Appl. Phys. Lett. 61 2057

    [2]

    Ring K M, Kavanagh K L 2003 J. Appl. Phys. 94 5982

    [3]

    Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H 2003 Semicond. Sci. Technol. 18 449

    [4]

    Huang J Q, Hong X L, Han G R, Weng W J, Du P Y 2006 Acta Phys. Sin. 55 3664 (in Chinese) [黄集权, 洪秀兰, 韩高荣, 翁文剑, 杜丕一 2006 物理学报 55 3664]

    [5]

    Amy F, Wan A S, Kahn A, Walker F J, Mckee R A 2004 J. Appl. Phys. 96 1635

    [6]

    Kim S, Hishita S, Kang Y M, Balk S 1995 J. Appl. Phys. 78 5604

    [7]

    Hunter D, Lord K, Williams T M, Zhang K, Pradhan A K, Sahu D R, Huang J L 2006 Appl. Phys. Lett. 89 092102

    [8]

    Lee M B, Kawasaki M, Yoshimoto M, Koinuma H 1995 Appl. Phys. Lett. 66 1331

    [9]

    Li G Q, Lai P T, Zeng S H, Huang M Q, Liu B Y 1995 Appl. Phys. Lett. 66 2436

    [10]

    Hao L. Z, Xue Q. Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 Appl. Phys. Lett. 91 212105

    [11]

    Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J, Yang G Z 2008 Appl. Phys. Lett. 92 071113

    [12]

    Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese) [王建元, 陈长乐, 高国棉, 韩立安, 金克新 2006 物理学报 55 6617]

    [13]

    Cardona M 1965 Phys. Rev. A 140 651

    [14]

    Berglund C N, Braun H J 1967 Phys. Rev. 164 790

计量
  • 文章访问数:  4408
  • PDF下载量:  346
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-01-18
  • 修回日期:  2013-03-22
  • 刊出日期:  2013-07-05

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