射频磁控溅射制备氮化锌薄膜的椭圆偏振光谱研究

陈仁刚; 邓金祥; 陈亮; 孔乐; 崔敏; 高学飞; 庞天奇; 苗一鸣

doi:10.7498/aps.63.137701

摘要

在不同的衬底温度下，使用反应射频磁控溅射法，在玻璃衬底上制备了氮化锌薄膜样品. 用X 射线衍射仪、原子力显微镜和椭偏仪对薄膜的晶体结构、表面形貌、光学性质进行了表征分析. 薄膜的晶粒尺寸会随着衬底温度的升高先增大后减小，在200 ℃时薄膜的结晶性最好. 用椭偏仪测试样品，建立物理模型计算出氮化锌薄膜在430–850 nm范围内的折射率和消光系数等光学参数. 利用Tauc公式计算出氮化锌薄膜的光学带隙在1.73–1.79 eV之间.

关键词:

Abstract

Zinc nitride (Zn3N2) thin films were deposited on glass substrates by reactive radio-frequency magnetron sputtering from a pure Zn target in nitrogen-argon ambient. X-ray diffraction analysis indicates that the films just after the deposition are polycrystalline with a preferred orientation of (400). With increasing substrate temperature, the grain size in zinc nitride film increases from 26.5 nm (100 ℃) to 33.6 nm (200 ℃), and then decreases to 17.8 nm (300℃). Atomic force microscopy reveals that the film surface morphology is dependent on the substrate temperature. With reflective spectroscopic ellipsometry, the ellipsometric parameters ψ and Δ of Zn3N2 films are measured. Then, a new model for Zn3N2 films is built. With the Tauc-Lorentz dispersion formula, the ellipsometric data are fitted, and both the thickness and optical constants (refractive index and extinction coefficient) of the films are obtained at a wavelength of 430–850 nm. The optical band gap is calculated from the extinction coefficient by using the Tauc formula, and a direct band gap of 1.73–1.79 eV is obtained.

Keywords:

作者及机构信息

1.
北京工业大学应用数理学院, 北京 100124

基金项目: 国家自然科学基金（批准号：60876006，60376007）和北京市教育委员会科技计划重点项目（批准号：KZ201410005008）资助的课题.

Authors and contacts

1.
College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876006, 60376007), and the Science and Technology Key Project of Beijing Education Committee, China (Grant No. KZ201410005008).

参考文献

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施引文献

[1]	Jiang N, Georgiev D G, Jayatissa A H 2013 Semicond. Sci. Technol. 28 025009
[2]	Futsuhara M, Yoshioka K, Taki O 1998 Thin Solid Films 322 274
[3]	Zong F J, Ma H L, Du W, Ma J, Zhang X J, Xiao H D, Ji F, Xue C S 2006 Appl. Surf. Sci. 252 7983
[4]	Nakano Y, Morikawa T, Ohwaki T, Taga Y 2006 Appl. Phys. Lett. 88 172103
[5]	Wang C, Ji Z G, Liu K, Xiang Y, Ye Z Z 2003 J. Cryst. Growth 259 279
[6]	Suda T, Kakishita K 2006 J. Appl. Phys. 99 076101
[7]	Núñez C G, Pau J L, Ruíz E, Piqueras J 2012 Appl. Phys. Lett. 101 253501
[8]	8Aperathitis E, Kambilafka V, Modreanu M, 2009 Thin Solid Films 518 1036
[9]	Bhattacharyya S R, Ayouchi R, Pinnisch M, Schwarz R 2012 Phys. Status Solidi C 9 469
[10]	Jayatissa A H, Wen T, Gautam Madhav 2012 J. Phys. D: Appl. Phys. 45 045402
[11]	Zhang Z, Xie E Q, Fu Y J, Li H, Shao L X 2007 Chin. J. Semicond. 28 1173
[12]	Yang T L, Zhang Z S, Li Y H, Lv M S, Song S M, Wu Z C, Yan J C, Han S H 2009 Appl. Surf. Sci. 255 3544
[13]	Jiang N K, Georgiev D G, Wen T, Jayatissa A H 2012 Thin Solid Films 520 1698
[14]	Feng D, Feng S T 2003 Phys. 32 434 (in Chinese) [冯端, 冯邵彤 2003 物理 32 434]
[15]	Partain D E, Williams D J, O'Keeffe M 1997 J. Solid State Chem. 132 56
[16]	Su M Y Y (translated by Liu D Q, Chen S X) 1982 Handbook of Silicate (Beijing: Light Industry Press) pp742-745 (in Chinese) [素木洋一著(刘达权, 陈世兴译) 1982 硅酸盐手册 (北京: 轻工业出版社) 第742–745页]
[17]	Qiu D J, Wu H Z, Yang A L, Xu X L 2000 Chin. J. Mat. Res. 14 485 (in Chinese)[邱东江, 吴惠祯, 杨爱龄, 徐晓玲 2000 材料研究学报 14 485]
[18]	Xiao J R, Xu H, Li Y F, Li M J 2007 Acta Phys. Sin. 56 4169 (in Chinese) [肖剑荣, 徐慧, 李燕峰, 李明君 2007 物理学报 56 4169]
[19]	Shao S Y, Chen J F, Zhao Y R, Feng J Q, Gao P, 2012 J.S. Chin. Nor. Univ. Nat. Sci. Ed. 44 66 (in Chinese) [邵士运, 陈俊芳, 赵益冉, 冯军勤, 高鹏 2012 华南师范大学学报(自然科学版) 44 66]
[20]	Chen L Y, Qian Y H 1995 Phys. 24 75 (in Chinese) [陈良尧, 钱佑华 1995 物理 24 75]
[21]	Liao N M, Li W, Jiang Y D, Kuang Y J, Qi K C, Li S B, Wu Z M 2008 Acta Phys. Sin. 57 1542 (in Chinese) [廖乃镘, 李伟, 蒋亚东, 匡越军, 祁康成, 李世彬, 吴志明 2008 物理学报 57 1542]
[22]	Wang X D, Shen J, Wang S Z, Zhang Z H 2009 Acta Phys. Sin. 58 8027 (in Chinese) [王晓栋, 沈军, 王生钊, 张志华 2009 物理学报 58 8027]
[23]	Jobin Yvon 2008 Spectrocopic Ellipsometry User Guide p266
[24]	Zhou Y, Wu G S, Dai W, Li H B, Wang A Y 2010 Acta Phys. Sin. 59 2356 (in Chinese) [周毅, 吴国松, 代伟, 李洪波, 汪爱英 2010 物理学报 59 2356]
[25]	Yang S H, Li H Q, Zhang Y L, Mo D, Tian H Y, Luo W G, Pu X H, Ding A L 2001 J. Inorg. Mat. 16 305 (in Chinese) [阳生红, 李辉遒, 张曰理, 莫党, 田虎永, 罗维根, 蒲兴华, 丁爱丽 2001 无机材料学报 16 305]
[26]	Sun X L, Hong R J, Qi H J, Fan Z X, Shao J D 2006 Acta Phys. Sin. 55 4923 (in Chinese) [孙喜莲, 洪瑞金, 齐红基, 范正修, 邵建达 2006 物理学报 55 4923]

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