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压应变Ge/(001)Si1-xGex空穴散射与迁移率模型

白敏 宣荣喜 宋建军 张鹤鸣 胡辉勇 舒斌

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压应变Ge/(001)Si1-xGex空穴散射与迁移率模型

白敏, 宣荣喜, 宋建军, 张鹤鸣, 胡辉勇, 舒斌

Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex

Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin
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  • 应变Ge材料因其载流子迁移率高, 且与硅工艺兼容等优点, 已成为硅基CMOS研究发展的重点和热点. 本文基于压应变Ge/(001)Si1-xGex价带结构模型, 研究了压应变Ge/(001)Si1-xGex空穴各散射概率、空穴迁移率与Ge组分(x)的关系, 包括空穴离化杂质散射概率、声学声子散射、非极性光学声子散射、总散射概率以及空穴各向同性、各向异性迁移率, 获得了有实用价值的相关结论. 本文量化模型可为应力致Ge改性半导体物理的理解及相关器件的研究设计提供有重要的理论参考.
    Strained Ge attracts attention of researchers for its high mobility and compatibility with Si technology. Based on the valence band model for compressively strained Ge/(001)Si1-xGex, the relationships between hole scattering, mobility, and Ge content (x) are established in this paper, including ionized impurity, acoustic phonon, non-polar optical phonon, total scattering rates, and the averaged and directional mobility of holes. Our quantitative data gained within the models can provide valuable references for the research of modified Ge materials physics and the design of the related devices.
    • 基金项目: 教育部博士点基金(批准号: JY0300122503)和陕西省自然科学基础研究计(批准号: 2014JQ8329)资助的课题.
    • Funds: Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2014JQ8329).
    [1]

    Hassan A H A, Morris R J H, Mironov O A, Beanland R, Walker D, Huband S, Dobbie A, Myronov M, Leadley D R 2014 Appl. Phys. Lett. 104 132108

    [2]

    Takaqi S, Takenaka M 2013 ECST 54 39

    [3]

    Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 237102 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 237102]

    [4]

    Lucovsky G, Kim J W, Nordlund D 2013 Microelectron Eng. 109 370

    [5]

    Takenaka M, Zhang R, Takaqi S 2013 IEEE Int. Reliab. Phys. Symp. Proc. Monterey, CA, United States, April 14-18, 2013 p4C.11-4C.18

    [6]

    Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137104 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 137104]

    [7]

    Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 物理学报 61 057304]

    [8]

    Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Sci China Phys Mech. 55 1399

    [9]

    Takaqi S, Zhang R, Takenaka M. 2013 Microelectron Eng. 109 389

    [10]

    Ji F, Xu J P, Lai P T, Li C X, Liu J G 2011 IEEE Electr Device L 32 122

    [11]

    Takaqi S, Zhang R, Iwasaki T, Taoka N, Takenaka M 2011 ECST 41 3

    [12]

    Zhang R, Iwasaki T, Taoka N, Takenaka M, Takaqi S 2013 Microelectron Eng. 88 1533

    [13]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827

    [14]

    Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 7228]

    [15]

    Song J J, Yang Ch, Zhang H M, Hu H Y, Zhou Ch Y, Wang B 2012 Sci China Phys Mech. 55 2033

    [16]

    Ye L X 1997 Monte Carlo simulation of the small-scale semiconductor devices (Beijing: Science Press) p280 (in Chinese) [叶修良1997小尺寸半导体器件的蒙特卡罗模拟(北京: 科学出版社) 第280页]

    [17]

    Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p367 (in Chinese) [刘恩科, 朱秉升, 罗晋生1994半导体物理学(北京: 国防工业出版社) 第367页]

  • [1]

    Hassan A H A, Morris R J H, Mironov O A, Beanland R, Walker D, Huband S, Dobbie A, Myronov M, Leadley D R 2014 Appl. Phys. Lett. 104 132108

    [2]

    Takaqi S, Takenaka M 2013 ECST 54 39

    [3]

    Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 237102 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 237102]

    [4]

    Lucovsky G, Kim J W, Nordlund D 2013 Microelectron Eng. 109 370

    [5]

    Takenaka M, Zhang R, Takaqi S 2013 IEEE Int. Reliab. Phys. Symp. Proc. Monterey, CA, United States, April 14-18, 2013 p4C.11-4C.18

    [6]

    Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137104 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 137104]

    [7]

    Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 物理学报 61 057304]

    [8]

    Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Sci China Phys Mech. 55 1399

    [9]

    Takaqi S, Zhang R, Takenaka M. 2013 Microelectron Eng. 109 389

    [10]

    Ji F, Xu J P, Lai P T, Li C X, Liu J G 2011 IEEE Electr Device L 32 122

    [11]

    Takaqi S, Zhang R, Iwasaki T, Taoka N, Takenaka M 2011 ECST 41 3

    [12]

    Zhang R, Iwasaki T, Taoka N, Takenaka M, Takaqi S 2013 Microelectron Eng. 88 1533

    [13]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827

    [14]

    Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 7228]

    [15]

    Song J J, Yang Ch, Zhang H M, Hu H Y, Zhou Ch Y, Wang B 2012 Sci China Phys Mech. 55 2033

    [16]

    Ye L X 1997 Monte Carlo simulation of the small-scale semiconductor devices (Beijing: Science Press) p280 (in Chinese) [叶修良1997小尺寸半导体器件的蒙特卡罗模拟(北京: 科学出版社) 第280页]

    [17]

    Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p367 (in Chinese) [刘恩科, 朱秉升, 罗晋生1994半导体物理学(北京: 国防工业出版社) 第367页]

计量
  • 文章访问数:  5532
  • PDF下载量:  349
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-07-12
  • 修回日期:  2014-09-14
  • 刊出日期:  2015-02-05

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