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应用同步辐射光电子谱(SRPES)和光致荧光(PL)方法探讨不同钝化条件对GaAs表面键合状态和电子态的影响.发现无论在酸性溶液或碱性溶液条件下,经过CH3CSNH2处理的GaAs表面S都与Ga和As成键,形成硫化物钝化层;钝化层形成后,PL谱的强度明显增强,表明GaAs表面复合中心的减少和缺陷态密度的降低In this paper, CH3CSNH2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films.
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