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利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiNx薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiNx薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiNx薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiNx 薄膜沉积速度影响较大, 制备的SiNx薄膜最大沉积速度为135 nm·min-1.
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关键词:
- 氮化硅薄膜 /
- 线性微波化学气相沉积 /
- 折射率 /
- 沉积速度
SiNx films are synthesized on Si substrates in a home-made linear microwave plasma enhanced chemical vapor deposition system at different microwave powers, duty cycles, substrate temperatures, and ratios of silane (SiH4) flow to ammonia (NH3) gas flow. The effects of technological parameters on morphology of film surface, stoichiometric proportion, refractive index and deposition rate of SiNx film are characterized by scanning electron microscopy (SEM) and elliptical polarization instrument, and the relationships among stoichiometric proportion, refractive index and deposition rate are investigated. The results from SEM analysis indicate that the surfaces are smooth and the elements are homogeneously distributed in the films obtained under different deposition parameters. The ratio of SiH4 flow to NH3 gas flow and the duty cycle are the most critical factors determining the refractive index which can be changed from 1.92 to 2.33. The thickness measurements show that the deposition rate of SiNx film is affected by microwave power, duty cycle, substrate temperature and flow ratio. The maximum deposition rate achieved in the paper is 135 nm·min-1.-
Keywords:
- SiNx thin film /
- linear microwave chemical vapor deposition /
- refractivity /
- deposition rate
[1] Akira H, Toshiharu M, Toshikazu N, Shigehira M, Atsushi M, Hironobu U, Naoto M, Hideki M 2008 Thin Solid Films 516 3000
[2] Swatowska B, Stapinski T 2008 Vacuum 82 942
[3] Skordas S, Sirinakis G, Yu W, Wu D, Efstathiadis H, Kaloyeros A E 2000 Mater. Res. Soc. Symp. Proc. 109 606
[4] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Acta Phys. Sin. 58 4109 (in Chinese) [丁万昱, 徐军, 陆文琪, 邓新绿, 董闯 2009 物理学报 58 4109]
[5] Habermehl S 1998 J. Appl. Phys. 83 4672
[6] Ding W Y, Xu J, Piao Y, Li Y Q, Gao P, Deng X L, Dong C 2005 Chin. Phys. Lett. 22 2332
[7] Yohei O, Keisuke O, Takuya O, Hideki M 2008 Thin Solid Films 516 611
[8] Kang S M, Yoon S G, Yoon D H 2008 Thin Solid Films 516 1405
[9] Vargheese K D, Rao G M 2001 J. Vac. Sci. Technol. A 19 1336
[10] Xu D, Zhu H, Yang L J, Yang Y J, Zheng Z H, Liu X H, Taniguchis, Shibatat 1995 Acta Metal. Sin. 31 164 (in Chinese) [徐东, 朱宏, 杨丽娟, 杨云洁, 郑志宏, 柳襄怀,谷口滋次,柴田俊夫 1995 金属学报 31 164]
[11] Chen J F, Wu X Q, Wang D Q, Ding Z F, Ren Z X 1999 Acta Phys. Sin. 48 1309 (in Chinese) [陈俊芳, 吴先秋, 王德求, 丁振峰, 任兆杏 1999 物理学报 48 1309]
[12] Yota J, Hander J, Saleh A A 2000 J. Vac. Sci. Technol. A 18 372
[13] Ji A L, Ma L B, Liu W, Wang Y Q 2004 Acta Phys. Sin. 53 3818 (in Chinese) [纪爱玲, 马利波, 刘薇, 王永谦 2004 物理学报 53 3818]
[14] Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于威, 李亚超, 丁文革, 张江用, 杨彦斌, 傅广生 2008 物理学报 57 3661]
[15] Zaghloul U, Papaioannou G J, Wang H, Bhushan B, Coccetti F, Pons P 2011 Nanotechology 22 205708
[16] Keita A S, Naciri A E, Delachat F, Carrada M, Ferblantier G, Slaoui A, Stchakovsky M 2011 Thin Solid Films 519 2870
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[1] Akira H, Toshiharu M, Toshikazu N, Shigehira M, Atsushi M, Hironobu U, Naoto M, Hideki M 2008 Thin Solid Films 516 3000
[2] Swatowska B, Stapinski T 2008 Vacuum 82 942
[3] Skordas S, Sirinakis G, Yu W, Wu D, Efstathiadis H, Kaloyeros A E 2000 Mater. Res. Soc. Symp. Proc. 109 606
[4] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Acta Phys. Sin. 58 4109 (in Chinese) [丁万昱, 徐军, 陆文琪, 邓新绿, 董闯 2009 物理学报 58 4109]
[5] Habermehl S 1998 J. Appl. Phys. 83 4672
[6] Ding W Y, Xu J, Piao Y, Li Y Q, Gao P, Deng X L, Dong C 2005 Chin. Phys. Lett. 22 2332
[7] Yohei O, Keisuke O, Takuya O, Hideki M 2008 Thin Solid Films 516 611
[8] Kang S M, Yoon S G, Yoon D H 2008 Thin Solid Films 516 1405
[9] Vargheese K D, Rao G M 2001 J. Vac. Sci. Technol. A 19 1336
[10] Xu D, Zhu H, Yang L J, Yang Y J, Zheng Z H, Liu X H, Taniguchis, Shibatat 1995 Acta Metal. Sin. 31 164 (in Chinese) [徐东, 朱宏, 杨丽娟, 杨云洁, 郑志宏, 柳襄怀,谷口滋次,柴田俊夫 1995 金属学报 31 164]
[11] Chen J F, Wu X Q, Wang D Q, Ding Z F, Ren Z X 1999 Acta Phys. Sin. 48 1309 (in Chinese) [陈俊芳, 吴先秋, 王德求, 丁振峰, 任兆杏 1999 物理学报 48 1309]
[12] Yota J, Hander J, Saleh A A 2000 J. Vac. Sci. Technol. A 18 372
[13] Ji A L, Ma L B, Liu W, Wang Y Q 2004 Acta Phys. Sin. 53 3818 (in Chinese) [纪爱玲, 马利波, 刘薇, 王永谦 2004 物理学报 53 3818]
[14] Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于威, 李亚超, 丁文革, 张江用, 杨彦斌, 傅广生 2008 物理学报 57 3661]
[15] Zaghloul U, Papaioannou G J, Wang H, Bhushan B, Coccetti F, Pons P 2011 Nanotechology 22 205708
[16] Keita A S, Naciri A E, Delachat F, Carrada M, Ferblantier G, Slaoui A, Stchakovsky M 2011 Thin Solid Films 519 2870
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