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负偏压热灯丝CVD金刚石膜核化和早期生长的研究

廖克俊 王万录 冯 斌

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负偏压热灯丝CVD金刚石膜核化和早期生长的研究

廖克俊, 王万录, 冯 斌

NUCLEATION AND INITIAL GROWTH OF DIAMOND BY BIASED HOT FILAMENT CHEMICAL VAPOR DEPOSITION

LIAO KE-JUN, WANG WAN-LU, FENG BIN
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  • 利用扫描电子显微镜、Raman谱和X射线光电子能谱,研究了Si衬底上热灯丝CVD金刚石膜的核化和早期生长.在-300V和100mA条件下预处理15min,镜面抛光的Si(100)表面上金刚石核密度超过了109cm-2,但是核的分布极不均匀且可分为三个区域:A区,边缘处以锥体为主;B区,位于边和中心之间过渡区是纳米金刚石;C区,中心处有SiC层.无偏压下生长4h后,A区形成许多大而弧立的金刚石颗粒,B区成为织构金刚石膜,而C区变为含有大量缺陷的连续金刚石膜.衬底负
    The nucleation and initial growth of diamond on Si(100) by biased hot filament chemical vapor deposition have been studied by scanning electron microscopy,Raman spectra,infrared absorption spectra and X-ray photoelectron spectra.After bias pretreated for 15min at -300V and 100mA,the nucleation density was found to be over 1010cm-2 on mirror-polished Si and was inhomogeneous,which can be divided into three regions on Si surface:A,cones at the edges;B,nanocrystalline diamond at the transition region between the edge and the centre;and C,SiC layers at the centre.The films with defects,textured films,and big discrete grains of diamond were formed at A,B,C regions respectively after 4h growth without bias.The nucleation enhancement by substrate negative bias is believed to be a combination effect of the ion bombardment and emission electron.The non-uniformity of ion distribution led to an uneven nucleation on the Si substrate surface.
    • 基金项目: 国家自然科学基金资助的课题.
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  • 文章访问数:  6040
  • PDF下载量:  580
  • 被引次数: 0
出版历程
  • 收稿日期:  1997-06-20
  • 修回日期:  1997-12-08
  • 刊出日期:  1998-03-20

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