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磷掺杂纳米硅薄膜的研制

刘 明 王子欧 奚中和 何宇亮

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磷掺杂纳米硅薄膜的研制

刘 明, 王子欧, 奚中和, 何宇亮

FABRICATION AND STUDY OF PHOSPHOR DOPED HYDROGENATED NANO-CRYSTALLINE SILICON FILM

LIU MING, WANG ZI-OU, XI ZHONG-HE, HE YU-LIANG
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  • 用PECVD薄膜沉积方法,成功地制备了磷掺杂纳米硅(nc-Si:H(P))薄膜.用扫描隧道电镜(STM)、Raman散射、傅里叶变换红外吸收(FTIR)谱、电子自旋共振(ESR)、共振核反应(RNR)技术对掺磷纳米硅进行了结构分析,确认了样品的微结构为纳米相结构.掺磷后膜中纳米晶粒的平均尺寸d减小,一般在25—45nm之间,且排列更加有序.掺磷nc-Si:H膜具有较高的光吸收系数,光学带隙在173—178eV之间,和本征nc-Si:H相同.掺杂nc-Si:H薄膜电导率在10-1
    Phosphor-doped nc-Si:H(nc-Si:H(P)) films were obtained by plasma enhanced chemical vapor deposition.The structural characteristics of nc-Si:H(P) films were investigated by means of scanning tunneling microscopy、Raman scattering,Fourier transform,infrared absorption spectroscopy, electron spin resonance and resonant nuclear reaction techniques.The measurements showed that the nc-Si:H(P) films have two-phase structure and the grains were embedded in the amorphous matrix.It was found that the grain size of the nc-Si:H(P) films was about 25—45nm,whichwas smaller than that of nc-Si:H films (about 3—6nm).It was also found that the optical absorption coefficient was quite high and the optical gap Eoptg was in a range of 173—178eV,which was almost the same as that of nc-Si:H films.The conductivity of nc-Si:H(P) films was in the range of 10-1—101Ω-1·cm-1,two magnitudes higher than that of nc-Si:H films and the maximum room-temperature conductivity reached to 505Ω-1·cm-1.The activation energy of conductivity of the nc-Si:H(P) films was in the range of 001—003eV,lower than that of nc-Si:H film.
    • 基金项目: 国家自然科学基金(批准号:19374009)资助的课题.
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  • 文章访问数:  6524
  • PDF下载量:  798
  • 被引次数: 0
出版历程
  • 收稿日期:  1999-06-23
  • 修回日期:  1999-10-18
  • 刊出日期:  2000-05-20

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