搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

三重简并拓扑半金属MoP中超快圆偏振光产生和调控光生热电流

加孜拉·哈赛恩 朱恪嘉 孙飞 吴艳玲 石友国 赵继民

引用本文:
Citation:

三重简并拓扑半金属MoP中超快圆偏振光产生和调控光生热电流

加孜拉·哈赛恩, 朱恪嘉, 孙飞, 吴艳玲, 石友国, 赵继民

Generation and control of photo-excited thermal currents in triple degenerate topological semimetal MoP with circularly polarized ultrafast light pulses

Jiazila Hasaien, Zhu Ke-Jia, Sun Fei, Wu Yan-Ling, Shi You-Guo, Zhao Ji-Min
PDF
HTML
导出引用
  • 超快激光可以用来产生和调控拓扑量子材料中的拓扑相变和自旋极化电流, 这些光诱导产生的新奇物性源于材料中受到体系对称性保护的线性色散能带结构的简并节点. 作为一种同时具有两重和三重简并节点的拓扑半金属, 磷化钼(MoP)是一类非常独特的拓扑半金属体系. 本文初步探索了三重简并拓扑半金属晶体MoP中产生自旋极化电流和奇异光学响应的机理, 设计并搭建了以圆偏振光产生并调控光电流的实验装置. 首先采用该装置成功在拓扑绝缘体Bi2Se3中产生了光电流, 与国际上已报道的实验结果对比效果很好, 证明了实验装置的可行性和可靠性; 进而对MoP进行了同样的光电流产生与调控实验. 采用400 nm的圆偏振超快激光脉冲, 在样品不同位置成功观测到了电流信号, 分析认为其为热电流, 不是与三重简并拓扑特性相关的光电流. 这为未来进一步产生和调控光电流提供了重要的研究基础, 对于研究普遍的拓扑量子材料的光电流效应具有可借鉴的意义.
    Ultrafast spectroscopy is a powerful method to generate and control topological phase transitions and spin-polarized electrical currents in topological quantum materials. These light-induced novel physical properties originate from the topologically nontrivial states of Dirac and Weyl fermions. The topological semimetal molybdenum phosphide (MoP) exhibits double and triple degenerate points in the momentum space. We present the preliminary results of spin-polarized electrical currents and optical response investigations of MoP. We design and construct an experimental setup to perform the photocurrent generation and control by circularly polarized light in topological insulator Bi2Se3. The results compare well with those reported, which confirms the validity and reliability of our experimental setup. Further, we conduct the photocurrent experiment on MoP by using 400 nm laser pulses for excitation and successfully detect the current signals at different sample positions. We attribute the observed currents to photo-induced thermal currents (not the photo current associated with the triple degenerate topological properties), which facilitates generating and controlling photocurrents in MoP in the future investigation. Our thermal current investigations are of essence for further exploring the photocurrents in various types of topological quantum materials.
      通信作者: 赵继民, jmzhao@iphy.ac.cn
    • 基金项目: 国家重点基础研究发展计划(批准号: 2017YFA0303603, 2016YFA0300303, 2017YFA0302901)、国家自然科学基金(批准号: 11574383, 11774408, 11774399)、中国科学院战略重点研究计划先导专项B(批准号: XDB30000000)、中国科学院国际合作项目(批准号: GJHZ1826)、 北京市自然科学基金(批准号: 4191003)和中国科学院创新交叉团队项目资助的课题
      Corresponding author: Zhao Ji-Min, jmzhao@iphy.ac.cn
    • Funds: Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0303603, 2016YFA0300303, 2017YFA0302901), the National Natural Science Foundation of China (Grant Nos. 11574383, 11774408, 11774399), the Strategic Priority Research Program of Chinese Academy of Sciences, China (Grant No. XDB30000000), the International Partnership Program of CAS (Grant No. GJHZ1826), the Beijing Natural Science Foundation, China (Grant No. 4191003), and the CAS Interdisciplinary Innovation Team.
    [1]

    Armitage N P, Mele E J, Vishwanath A 2018 Rev. Mod. Phys. 90 015001Google Scholar

    [2]

    Wan X G, Turner A M, Vishwanath A, Savrasov S Y 2011 Phys. Rev. B 83 205101Google Scholar

    [3]

    Huang X C, Zhao L X, Long Y J, Wang P P, Chen D, Yang Z H, Liang H, Xue M Q, Weng H M, Fang Z, Dai X, Chen G F 2015 Phys. Rev. X 5 031023Google Scholar

    [4]

    Bradlyn B, Cano J, Wang Z J, Vergniory M G, Felser C, Cava R J, Bernevig B A 2016 Science 353 6299Google Scholar

    [5]

    Lü B Q, Feng Z L, Xu Q N, Gao X, Ma J Z, Kong L Y, Richard P, Huang Y B, Strocov V N, Fang C, Weng H M, Shi Y G, Qian T, Ding H 2017 Nature 546 627Google Scholar

    [6]

    Chi Z H, Chen X L, An C, et al. 2018 npj. Quantum. Materials 3 28Google Scholar

    [7]

    Zhu Z M, Winkler G W, Wu Q S, Li J, Soluyanov A A 2016 Phys. Rev. X 6 031003Google Scholar

    [8]

    Tian Y C, Zhang W H, Li F S, Wu Y L, Wu Q, Sun F, Zhou G Y, Wang L L, Ma X C, Xue Q K, Zhao J M 2016 Phys. Rev. Lett. 116 107001Google Scholar

    [9]

    Wu Q, Zhou H X, Wu Y L, Hu L L, Ni S L, Tian Y C, Sun F, Zhou F, Dong X L, Zhao Z X, Zhao J M 2020 Chin. Phys. Lett. (Express Letter) 37 097802Google Scholar

    [10]

    Toda Y, Kawanokami F, Kurosawa T, et al. 2014 Phys. Rev. B. 90 094513Google Scholar

    [11]

    曹宁, 龙拥兵, 张治国, 高丽娟, 袁洁, 赵伯儒, 赵士平, 杨乾生, 赵继民, 傅盘铭 2008 物理学报 57 2543Google Scholar

    Cao N, Long Y B, Zhang Z G, Gao L J, Yuan J, Zhao B R, Zhao S P, Yang Q S, Zhao J M, Fu P M 2008 Acta Phys. Sin. 57 2543Google Scholar

    [12]

    Wu Y L, Yin X, Hasaien J, Ding Y, Zhao J M 2020 Chin. Phys. Lett. (Express Letter) 37 047801Google Scholar

    [13]

    Hu L L, Yang M, Wu Y L, Wu Q, Zhao H, Sun F, Wang W, He R, He S L, Zhang H, Huang R J, Li L F, Shi Y G, Zhao J M 2019 Phys. Rev. B 99 094307Google Scholar

    [14]

    Hsieh D, Mahmood F, Torchinsky D H, Cao G, Gedik N 2012 Phys. Rev. B 86 035128Google Scholar

    [15]

    Sun F, Yang M, Yang M W, Wu Q, Zhao H, Ye X, Shi Y G, Zhao J M 2018 Chin. Phys. Lett. 35 116301Google Scholar

    [16]

    Sun F, Wu Q, Wu Y L, Zhao H, Yi C J, Tian Y C, Liu H W, Shi Y G, Ding H, Dai X, Richard P, Zhao J M 2017 Phys. Rev. B 95 235108Google Scholar

    [17]

    Wang M C, Qiao S, Jiang Z, Luo S N, Qi J 2016 Phys. Rev. Lett. 116 036601Google Scholar

    [18]

    Aku-Leh C, Zhao J M, Merlin R, Menéndez J, Cardona M 2005 Phys. Rev. B 71 205211Google Scholar

    [19]

    Bragas A V, Aku-Leh C, Costantino S, Ingale A, Zhao J M, Merlin R 2004 Phys. Rev. B 69 205306Google Scholar

    [20]

    Wu Y L, Wu Q, Sun F, Cheng C, Meng S, Zhao J M 2015 Proc. Natl. Acad. Sci. USA 112 11800Google Scholar

    [21]

    Wu R, Zhang Y L, Yan S C, Bian F, Wang W L, Bai X D, Lu X H, Zhao J M 2011 Nano Lett. 11 5159Google Scholar

    [22]

    Hu L L, Sun F, Zhao H, Zhao J M 2019 Opt. Lett. 44 5214Google Scholar

    [23]

    Wu Y L, Zhu L L, Wu Q, et al. 2016 Appl. Phys. Lett. 108 241110Google Scholar

    [24]

    Wang W H, Wu Y L, Wu Q, Hua J J, Zhao J M 2016 Sci. Rep. 6 107001

    [25]

    Tian Y C, Tian H, Wu Y L, Zhu L L, Tao L Q, Zhang W, Shu Y, Xie D, Yang Y, Wei Z Y, Lu X H, Ren T L, Shih C K, Zhao J M 2015 Sci. Rep. 5 10582Google Scholar

    [26]

    Zhao J M, Bragas A V, Lockwood D J, Merlin R 2004 Phys. Rev. Lett. 93 107203Google Scholar

    [27]

    Zhao J M, Bragas A V, Merlin R, Lockwood D J 2006 Phys. Rev. B 73 184434Google Scholar

    [28]

    Chan C K, Lindner N H, Refael G, Lee P A 2017 Phys. Rev. B 95 041104Google Scholar

    [29]

    Morimoto T, Zhong S D, Orenstein J, Moore J E 2016 Phys. Rev. B 94 245121Google Scholar

    [30]

    Juan F D, Grushin A G, Morimoto T, Moore J E 2017 Nat. Commun. 8 15995Google Scholar

    [31]

    Morimoto T, Nagaosa N 2016 Sci. Adv. 2 e1501524Google Scholar

    [32]

    Mclver J W, Hsieh D, Steinberg H, Herrero P J, Gedik N 2012 Nat. Nanotech. 7 96Google Scholar

    [33]

    Ma Q, Xu S Y, Chan C K, Zhang C L, Chang G Q, Lin Y X, Xie W W, Palacios T, Lin H, Jia S, Lee P A, Herrero P J, Gedik N 2017 Nat. Phys. 13 842Google Scholar

    [34]

    Ma J C, Gu Q Q, Liu Y N, Lai J W, Yu P, Zhuo X, Liu Z, Chen J H, Feng J, Sun D 2019 Nat. Mater. 18 476Google Scholar

    [35]

    Kumar N, Sun Y, Nicklas M, et al. 2019 Nat. Commum. 10 2475Google Scholar

  • 图 1  (a) 光电流产生和探测实验装置, f1和f2为透镜, BBO为倍频非线性晶体; (b) 800 nm (1.55 eV, 粉红色箭头) 和 400 nm (3.1 eV, 蓝紫色箭头) 脉冲激光可能激发的动量区域, 其中能带结构引自文献[35]计算结果; (c) MoP中的4个三重简并点局域放大(红色圆圈)[35]

    Fig. 1.  (a) Schematic photocurrent experimental setup. f1 and f2 are focusing lenses. BBO is the doubling frequency nonlinear crystal; (b) the allowed excitation areas by 800 nm (1.55 eV, pink arrows) and 400 nm (3.1 eV, purple arrows) pulsed lasers, respectively. The band structure is adapted from Ref. [35]; (c) the four triple points are highlighted by the red circles[35].

    图 2  MoP样品的表征 (a) 光电流实验所使用的MoP样品, 左图为SEM图像, 右图为加电极后粘到铜托上的样品实物图; (b) 常温下的Raman光谱, 红色箭头标出两个拉曼峰; (c) 0和7 T下的电输运测量; (d) 2 K温度下的电阻随磁场的变化; (e) 5 μm分辨率样品局部放大SEM图; (f) 20 μm分辨率样品局部放大SEM图

    Fig. 2.  Characterizations of the MoP sample in the photocurrent experiment: (a) SEM image (left panel) and the sample after adding the electrodes (right panel); (b) Raman spectroscopy at room temperature, two red arrows mark the Raman peaks; (c) temperature dependence of the resistance at 0 and 7 T external magnetic field; (d) magnetic field dependence of resistance at 2 K; (e) SEM image with a resolution of 5 μm; (f) SEM image with a resolution of 20 μm.

    图 3  (a) 光电流实验示意图; (b) 不同入射角情形下Bi2Se3样品的光电流强度对激发光圆偏振度的依赖关系(有offset); (c) 光45°入射Bi2Se3样品情形下, 扫描X方向位置, 光电流强度对偏振的依赖关系图; (d) 光45°入射Bi2Se3样品情形下, 扫描Y方向位置, 光电流强度对偏振的依赖关系图

    Fig. 3.  (a) Schematic of the experimental geometry; (b) photocurrent intensity depending on the polarization of the laser beam under different incident angles, which is offset for clarity; (c) photocurrent intensity depending on the sample position along the X axis, where the incident angle of ultrafast pulses is 45°; (d) photocurrent intensity depending on the sample position along the Y axis, with 45° incidence angle.

    图 4  (a) MoP样品的晶格结构示意图; (b) 光激发样品的光斑位置示意图; (c) 400 nm超快激光照射MoP样品的P1P2两个对称位置时, 分别测得的电流随偏振的依赖关系. 红色和蓝色代表P1P2两个位置, 灰色为不加光照射时测得的电流

    Fig. 4.  (a) Schematic lattice structure of MoP, purple and brown spheres represent P and Mo atoms, respectively; (b) schematic diagram of the experiment illustrating the two photoexcitation positions on the sample; (c) polarization dependence of the current intensity at P1 and P2 under 400 nm light excitation. Solid dots in red and blue are current intensity data obtained at P1 and P2, respectively. Gray dots donate the situation without any light excitation.

  • [1]

    Armitage N P, Mele E J, Vishwanath A 2018 Rev. Mod. Phys. 90 015001Google Scholar

    [2]

    Wan X G, Turner A M, Vishwanath A, Savrasov S Y 2011 Phys. Rev. B 83 205101Google Scholar

    [3]

    Huang X C, Zhao L X, Long Y J, Wang P P, Chen D, Yang Z H, Liang H, Xue M Q, Weng H M, Fang Z, Dai X, Chen G F 2015 Phys. Rev. X 5 031023Google Scholar

    [4]

    Bradlyn B, Cano J, Wang Z J, Vergniory M G, Felser C, Cava R J, Bernevig B A 2016 Science 353 6299Google Scholar

    [5]

    Lü B Q, Feng Z L, Xu Q N, Gao X, Ma J Z, Kong L Y, Richard P, Huang Y B, Strocov V N, Fang C, Weng H M, Shi Y G, Qian T, Ding H 2017 Nature 546 627Google Scholar

    [6]

    Chi Z H, Chen X L, An C, et al. 2018 npj. Quantum. Materials 3 28Google Scholar

    [7]

    Zhu Z M, Winkler G W, Wu Q S, Li J, Soluyanov A A 2016 Phys. Rev. X 6 031003Google Scholar

    [8]

    Tian Y C, Zhang W H, Li F S, Wu Y L, Wu Q, Sun F, Zhou G Y, Wang L L, Ma X C, Xue Q K, Zhao J M 2016 Phys. Rev. Lett. 116 107001Google Scholar

    [9]

    Wu Q, Zhou H X, Wu Y L, Hu L L, Ni S L, Tian Y C, Sun F, Zhou F, Dong X L, Zhao Z X, Zhao J M 2020 Chin. Phys. Lett. (Express Letter) 37 097802Google Scholar

    [10]

    Toda Y, Kawanokami F, Kurosawa T, et al. 2014 Phys. Rev. B. 90 094513Google Scholar

    [11]

    曹宁, 龙拥兵, 张治国, 高丽娟, 袁洁, 赵伯儒, 赵士平, 杨乾生, 赵继民, 傅盘铭 2008 物理学报 57 2543Google Scholar

    Cao N, Long Y B, Zhang Z G, Gao L J, Yuan J, Zhao B R, Zhao S P, Yang Q S, Zhao J M, Fu P M 2008 Acta Phys. Sin. 57 2543Google Scholar

    [12]

    Wu Y L, Yin X, Hasaien J, Ding Y, Zhao J M 2020 Chin. Phys. Lett. (Express Letter) 37 047801Google Scholar

    [13]

    Hu L L, Yang M, Wu Y L, Wu Q, Zhao H, Sun F, Wang W, He R, He S L, Zhang H, Huang R J, Li L F, Shi Y G, Zhao J M 2019 Phys. Rev. B 99 094307Google Scholar

    [14]

    Hsieh D, Mahmood F, Torchinsky D H, Cao G, Gedik N 2012 Phys. Rev. B 86 035128Google Scholar

    [15]

    Sun F, Yang M, Yang M W, Wu Q, Zhao H, Ye X, Shi Y G, Zhao J M 2018 Chin. Phys. Lett. 35 116301Google Scholar

    [16]

    Sun F, Wu Q, Wu Y L, Zhao H, Yi C J, Tian Y C, Liu H W, Shi Y G, Ding H, Dai X, Richard P, Zhao J M 2017 Phys. Rev. B 95 235108Google Scholar

    [17]

    Wang M C, Qiao S, Jiang Z, Luo S N, Qi J 2016 Phys. Rev. Lett. 116 036601Google Scholar

    [18]

    Aku-Leh C, Zhao J M, Merlin R, Menéndez J, Cardona M 2005 Phys. Rev. B 71 205211Google Scholar

    [19]

    Bragas A V, Aku-Leh C, Costantino S, Ingale A, Zhao J M, Merlin R 2004 Phys. Rev. B 69 205306Google Scholar

    [20]

    Wu Y L, Wu Q, Sun F, Cheng C, Meng S, Zhao J M 2015 Proc. Natl. Acad. Sci. USA 112 11800Google Scholar

    [21]

    Wu R, Zhang Y L, Yan S C, Bian F, Wang W L, Bai X D, Lu X H, Zhao J M 2011 Nano Lett. 11 5159Google Scholar

    [22]

    Hu L L, Sun F, Zhao H, Zhao J M 2019 Opt. Lett. 44 5214Google Scholar

    [23]

    Wu Y L, Zhu L L, Wu Q, et al. 2016 Appl. Phys. Lett. 108 241110Google Scholar

    [24]

    Wang W H, Wu Y L, Wu Q, Hua J J, Zhao J M 2016 Sci. Rep. 6 107001

    [25]

    Tian Y C, Tian H, Wu Y L, Zhu L L, Tao L Q, Zhang W, Shu Y, Xie D, Yang Y, Wei Z Y, Lu X H, Ren T L, Shih C K, Zhao J M 2015 Sci. Rep. 5 10582Google Scholar

    [26]

    Zhao J M, Bragas A V, Lockwood D J, Merlin R 2004 Phys. Rev. Lett. 93 107203Google Scholar

    [27]

    Zhao J M, Bragas A V, Merlin R, Lockwood D J 2006 Phys. Rev. B 73 184434Google Scholar

    [28]

    Chan C K, Lindner N H, Refael G, Lee P A 2017 Phys. Rev. B 95 041104Google Scholar

    [29]

    Morimoto T, Zhong S D, Orenstein J, Moore J E 2016 Phys. Rev. B 94 245121Google Scholar

    [30]

    Juan F D, Grushin A G, Morimoto T, Moore J E 2017 Nat. Commun. 8 15995Google Scholar

    [31]

    Morimoto T, Nagaosa N 2016 Sci. Adv. 2 e1501524Google Scholar

    [32]

    Mclver J W, Hsieh D, Steinberg H, Herrero P J, Gedik N 2012 Nat. Nanotech. 7 96Google Scholar

    [33]

    Ma Q, Xu S Y, Chan C K, Zhang C L, Chang G Q, Lin Y X, Xie W W, Palacios T, Lin H, Jia S, Lee P A, Herrero P J, Gedik N 2017 Nat. Phys. 13 842Google Scholar

    [34]

    Ma J C, Gu Q Q, Liu Y N, Lai J W, Yu P, Zhuo X, Liu Z, Chen J H, Feng J, Sun D 2019 Nat. Mater. 18 476Google Scholar

    [35]

    Kumar N, Sun Y, Nicklas M, et al. 2019 Nat. Commum. 10 2475Google Scholar

  • [1] 王贺岩, 高怡帆, 廖家宝, 陈俊彩, 李怡莲, 吴怡, 徐国亮, 安义鹏. 二维NiBr2单层自旋电子输运以及光电性质. 物理学报, 2022, 71(9): 097502. doi: 10.7498/aps.71.20212384
    [2] 韩迪仪, 顾阳, 胡涛政, 董雯, 倪亚贤. 双金属/TiO2纳米管复合结构中增强的光电流. 物理学报, 2021, 70(3): 038103. doi: 10.7498/aps.70.20201134
    [3] 宋邦菊, 金钻明, 郭晨阳, 阮舜逸, 李炬赓, 万蔡华, 韩秀峰, 马国宏, 姚建铨. Y3Fe5O12(YIG)/Pt异质结构中基于超快自旋塞贝克效应产生太赫兹相干辐射研究. 物理学报, 2020, 69(20): 208704. doi: 10.7498/aps.69.20200733
    [4] 姜聪颖, 孙飞, 冯子力, 刘世炳, 石友国, 赵继民. 三重简并拓扑半金属磷化钼的时间分辨超快动力学. 物理学报, 2020, 69(7): 077801. doi: 10.7498/aps.69.20191816
    [5] 林贤, 金钻明, 李炬赓, 郭飞云, 庄乃锋, 陈建中, 戴晔, 阎晓娜, 马国宏. 非线性克尔效应对飞秒激光偏振的超快调制. 物理学报, 2018, 67(23): 237801. doi: 10.7498/aps.67.20181450
    [6] 侯海燕, 姚慧, 李志坚, 聂一行. 磁性硅烯超晶格中电场调制的谷极化和自旋极化. 物理学报, 2018, 67(8): 086801. doi: 10.7498/aps.67.20180080
    [7] 张顺浓, 朱伟骅, 李炬赓, 金钻明, 戴晔, 张宗芝, 马国宏, 姚建铨. 铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射. 物理学报, 2018, 67(19): 197202. doi: 10.7498/aps.67.20181178
    [8] 伊丁, 武镇, 杨柳, 戴瑛, 解士杰. 有机分子在铁磁界面处的自旋极化研究. 物理学报, 2015, 64(18): 187305. doi: 10.7498/aps.64.187305
    [9] 郑圆圆, 任桂明, 陈锐, 王兴明, 谌晓洪, 王玲, 袁丽, 黄晓凤. 氢化铁的自旋极化效应及势能函数. 物理学报, 2014, 63(21): 213101. doi: 10.7498/aps.63.213101
    [10] 刘昶时, 刘文莉. 由阴、阳极电压及入射光强及频率确定光电流. 物理学报, 2013, 62(2): 028401. doi: 10.7498/aps.62.028401
    [11] 黎欢, 郭卫. 自旋极化对Kondo系统基态的影响. 物理学报, 2010, 59(10): 7320-7326. doi: 10.7498/aps.59.7320
    [12] 陈静, 蒋震宗, 陆加佳, 刘永生, 朱燕艳. 纳米硅结构中分裂能级对光电输运特性的影响. 物理学报, 2010, 59(12): 8862-8869. doi: 10.7498/aps.59.8862
    [13] 陈华, 杜磊, 庄奕琪, 牛文娟. Rashba自旋轨道耦合作用下电荷流散粒噪声与自旋极化的关系研究. 物理学报, 2009, 58(8): 5685-5692. doi: 10.7498/aps.58.5685
    [14] 乔建良, 田思, 常本康, 杜晓晴, 高频. 负电子亲和势GaN光电阴极激活机理研究. 物理学报, 2009, 58(8): 5847-5851. doi: 10.7498/aps.58.5847
    [15] 滕利华, 余华梁, 黄志凌, 文锦辉, 林位株, 赖天树. 本征GaAs中电子自旋极化对电子复合动力学的影响研究. 物理学报, 2008, 57(10): 6593-6597. doi: 10.7498/aps.57.6593
    [16] 陈小雪, 滕利华, 刘晓东, 黄绮雯, 文锦辉, 林位株, 赖天树. InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究. 物理学报, 2008, 57(6): 3853-3856. doi: 10.7498/aps.57.3853
    [17] 刘鲁宁, 寿 倩, 雷 亮, 林春梅, 赖天树, 文锦辉, 林位株. 半导体中相干控制光电流对光场的偏振依赖性. 物理学报, 2005, 54(4): 1863-1867. doi: 10.7498/aps.54.1863
    [18] 郭立俊, Jan-Peter Wüstenberg, Andreyev Oleksiy, Michael Bauer, Martin Aeschlimann. 利用飞秒双光子光电子发射研究GaAs(100)的自旋动力学过程. 物理学报, 2005, 54(7): 3200-3205. doi: 10.7498/aps.54.3200
    [19] 秦建华, 郭 永, 陈信义, 顾秉林. 磁电垒结构中自旋极化输运性质的研究. 物理学报, 2003, 52(10): 2569-2575. doi: 10.7498/aps.52.2569
    [20] 袁先漳, 陆 卫, 李 宁, 陈效双, 沈学础, 资 剑. 超长波GaAs/AlGaAs量子阱红外探测器光电流谱特性研究. 物理学报, 2003, 52(2): 503-507. doi: 10.7498/aps.52.503
计量
  • 文章访问数:  6165
  • PDF下载量:  167
  • 被引次数: 0
出版历程
  • 收稿日期:  2020-01-06
  • 修回日期:  2020-04-06
  • 上网日期:  2020-05-09
  • 刊出日期:  2020-10-20

/

返回文章
返回