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基于重离子试验数据预测纳米加固静态随机存储器质子单粒子效应敏感性

罗尹虹 张凤祁 郭红霞 Wojtek Hajdas

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基于重离子试验数据预测纳米加固静态随机存储器质子单粒子效应敏感性

罗尹虹, 张凤祁, 郭红霞, Wojtek Hajdas

Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory

Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas
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  • 为实现对纳米DICE (dual interlocked cell)加固器件抗质子单粒子能力的准确评估, 通过对65 nm双DICE加固静态随机存储器(static random access memory, SRAM)重离子单粒子翻转试验数据的分析, 获取了其在重离子垂直和倾角入射时的单粒子翻转 (single event upset, SEU)阈值以及离子入射最劣方位角, 并结合蒙卡仿真获取不同能量质子与器件多层金属布线层发生核反应产生的次级粒子LET(linear energy transfer)值最大值以及角度分布特性, 对器件在不同能量下的质子单粒子效应敏感性进行了预测, 质子单粒子效应实验结果验证了预测方法的有效性以及预测结果的准确性, 并提出针对DICE加固类器件在重离子和质子单粒子效应试验评估中均应开展离子最劣方位角下的倾角入射试验.
    In order to evaluate the radiation tolerance to proton single event effect(SEE) in nanometer dual interlocked cell (DICE) hardening device accurately, single event upset (SEU) linear energy transfer (LET) threshold at heavy ion normal and tilt incidence, and the worst case SEU orientational angle are acquired based on the analysis of heavy ion SEU testing data in 65 nm dual DICE static random access memory (SRAM). It is proved that dual DICE design is effective for improving the LET threshold against SEU. Howerer, heavy ion tilt incidence at the worst orientational angle will significantly reduce the SEU threshold and increase the SEU cross section. The worst orientational angle for SEU in DICE SRAM is the large tilting angle along the well. The maximum LET value and the emission angle distribution of secondary particle induced by the nuclear reaction between protons with different energy and layers with different multiple metallization are obtained by using Monte-Carlo simulation. The maximum LET value of secondary particle from proton-copper spallation reaction is higher than 15 MeV·cm2/mg for 100 MeV and 200 MeV protons. Secondary particles with the maximum energy and longest range are emitted preferentially in the forward direction. Proton SEU sensitivity is further predicted through combining heavy ion test data with Monte-Carlo simulation. Proton SEU test data verify the effectiveness of the prediction method and the accuracy of the prediction results. The research results indicate that the tolerance of nanometer DICE hardening technique against proton SEU will be overestimated if SEE evaluation test is carried out with only 100 MeV proton accelerator or normal incidence. Proton single event upset in nanometer dual DICE SRAM has an evident dependence on tilt angle and orientational angle. By adopting the above prediction method, whether proton SEE test needs performing or not in nanometer radiation-hardening device can be judged and screened. The requirements for the maximum energy of proton accelerator can be ascertained. In order to ensure that the devices are applied to space with high reliability, SEE test should be carried out including tilt incidence at the worst orientational angle in nanometer DICE hardening device in the process of heavy ion and proton SEE test evaluation.
      通信作者: 罗尹虹, luoyinhong@nint.ac.cn
    • 基金项目: 国家自然科学基金重大项目(批准号: 11690043, 11690040)资助的课题
      Corresponding author: Luo Yin-Hong, luoyinhong@nint.ac.cn
    • Funds: Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690043, 11690040)
    [1]

    Hoeffgen S K, Durante M, Ferlet-Cavrois V, Harboe-Sørensen R, Lennartz W, Kuendgen T, Kuhnhenn J, Latessa C, Mathes M, Menicucci A, Metzger S, Nieminen P, Pleskac R, Poivey C, Schardt D, Weinand U 2012 IEEE Trans. Nucl. Sci. 59 1161Google Scholar

    [2]

    Falguere D, Boscher D, Nuns T, Duzellier S, Bourdarie S, Ecoffet R, Barde S, Cueto J, Alonzo C, Hoffman C 2002 IEEE Trans. Nucl. Sci. 49 2782Google Scholar

    [3]

    Peterson E L 1992 IEEE Trans. Nucl. Sci. 39 1600Google Scholar

    [4]

    Calvel P, Barillot C, Lamothe P, Ecoffet R, Duzellier S, Falguere D 1996 IEEE Trans. Nucl. Sci. 43 2827Google Scholar

    [5]

    Edmonds L D 2000 IEEE Trans. Nucl. Sci. 47 1713Google Scholar

    [6]

    Barak J 2006 .IEEE Trans. Nucl. Sci. 53 3336Google Scholar

    [7]

    Koga R, George J, Swift G, Yui C, Edmonds L, Carmichael C, Langley T, Murray P, Lanes K, Napier M 2004 IEEE Trans. Nucl. Sci. 51 2825Google Scholar

    [8]

    Hansen D L 2015 IEEE Trans. Nucl. Sci. 62 2874Google Scholar

    [9]

    Sierawski B D, Pellish J A, Reed R A, Schrimpf R D, Warren K M, Weller R A, Mendenhall M H, Black J D, Tipton A D, Xapsos M A, Baumann R C, Deng X, Campola M J, Friendlich M R, Kim H S, Phan A M, Seidleck C M 2009 IEEE Trans. Nucl. Sci. 56 3085Google Scholar

    [10]

    Warren K M, Weller R A, Sierawski B D, Reed R A, Mendenhall M H, Schrimph R D, Massengill L W, Porter M E, Wilkinson J D, Label K A, Adams J H 2007 IEEE Trans. Nucl. Sci. 54 898Google Scholar

    [11]

    Xi K, Geng C, Zhang Z G, Hou M D, Sun Y M, Luo J, Liu T Q, Wang B, Ye B, Yin Y N, Liu J 2016 Chin. Phys. C 40 066001Google Scholar

    [12]

    Warren K M, Sierawski B D, Reed R A, Weller R A, Carmichael C, Lesea A, Mendenhal M H, Dodd P E, Schrimpf R D, Massengill L W, Hoang T, Wan H, De Jong J L, Padovani R, Fabula J J 2007 IEEE Trans. Nucl. Sci. 54 2419Google Scholar

    [13]

    Gorbunov M S, Boruzdina A B, Dolotov P S 2016 IEEE Trans. Nucl. Sci. 63 2250Google Scholar

    [14]

    Loveless T D, Jagannathan S, Reece T, Chetia J, Bhuva B L, McCurdy M W, Massengill L W, Wen S J, Wong R, Rennie D 2011 IEEE Trans. Nucl. Sci. 58 1008Google Scholar

    [15]

    Amusan O A, Massengill L W, Baze M. P., Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C, Alles M L 2007 IEEE Trans. Nucl. Sci. 52 2584

    [16]

    Gorbunov M S, Dolotov P S, Antonov A A, Zebrev G.I, Emeliyanov V V, Boruzdina A B, Petrov A G, Ulanova A V 2014 IEEE Trans. Nucl. Sci. 61 1575Google Scholar

    [17]

    Liu L, Yue S G, Lu S J 2015 J. Semicond. 36 115007Google Scholar

    [18]

    Cabanas-Holmen M, Cannon E H, Rabaa S, Amort T, Ballast J, Carson M, Lam D, Brees R 2013 IEEE Trans. Nucl. Sci. 60 4374Google Scholar

    [19]

    European Space Agency 2014 ESCC Basic Specification NO. 25100

    [20]

    Turflinger T L, Clymer D A, Mason L W, Stone S, George J S, Koga R, Beach E, Huntington K, Turflinger T L 2017 IEEE Trans. Nucl. Sci. 64 309Google Scholar

    [21]

    Schwank J R, Shaneyfelt M R, Baggio J, Dodd P E, Felix J A, Ferlet-Cavrois V, Paillet P, Lambert D, Sexton F W, Hash G L, Blackmore E 2006 IEEE Trans. Nucl. Sci. 52 2622

    [22]

    罗尹虹, 张凤祁, 王燕萍, 王圆明, 郭晓强, 郭红霞 2016 物理学报 65 068501Google Scholar

    Luo Y H, Zhang F Q, Wang Y P, Wang Y M, Guo X Q, Guo H X 2016 Acta Phys. Sin. 65 068501Google Scholar

  • 图 1  DICE存储单元电路原理图

    Fig. 1.  Diagram of the DICE memory cell.

    图 2  双DICE存储单元交叉布局版图示意图以及存储数据1时DICE单元4组灵敏节点对分布情况

    Fig. 2.  Layout diagram of dual DICE cells and the distribution of four sensitive pairs with “1”.

    图 3  重离子沿不同方位角倾斜60°入射器件示意图

    Fig. 3.  Schematic of heavy ion tilt 60° incidence along different orientational angle.

    图 4  65 nm SRAM重离子单粒子位翻转截面曲线

    Fig. 4.  65 nm dual DICE SRAM heavy ion bit SEU cross section versus the effective LET.

    图 5  65 nm DICE SRAM有源区上方多层金属布线层

    Fig. 5.  Multiple metal-interconnection layers above the active area in 65 nm SRAM.

    图 6  100 MeV和200 MeV质子穿过器件多层金属布线层后在硅中产生的次级粒子LET值分布 (a) 铝互联; (b) 铜互联

    Fig. 6.  LET distribution of secondary particle in silicon with 100 MeV and 200 MeV protons passing through multiple metallization layers: (a) Al interconnection; (b) cu interconnection.

    图 7  65 nm双DICE SRAM质子单粒子翻转截面

    Fig. 7.  Proton single event upset cross section in 65 nm dual DICE SRAM.

    图 8  100 MeV质子穿过多层金属布线层产生的Z = 27次级粒子能量角度分布

    Fig. 8.  The distribution of energy and angle of secondary particle with Z = 13 induced by interaction with multiple metallization layers by 100 MeV protons.

    表 1  双DICE存储单元存储不同数据时的灵敏节点对

    Table 1.  Sensitive pairs with different data stored in dual DICE cell.

    存储数据灵敏节点对存储数据灵敏节点对
    BL = 1, (A, B, C, D) = (1, 0, 1, 0)N1/N3BL = 0, (A, B, C, D) = (0, 1, 0, 1)N2/N4
    P2/P4P1/P3
    N1/P2N2/P3
    N3/P4N4/P1
    下载: 导出CSV

    表 2  试验离子种类信息

    Table 2.  Ion species in Heavy ion testing.

    序号离子种类能量/MeV射程/μm垂直入射时有效LET/(MeV·cm2/mg)倾角30°、60°时对应的有效LET/(MeV·cm2/mg)
    119F9+11082.74.45.1/9.3
    235Cl11, 14+16046.014.016.5/30.7
    348Ti10, 15+16934.723.5
    474Ge11, 20+21030.537.4
    579Br13, 21+22030.440.545.8/63.3
    6127I15, 25+26528.852.757.7/68.0
    7209Bi31+92353.799.8
    下载: 导出CSV
  • [1]

    Hoeffgen S K, Durante M, Ferlet-Cavrois V, Harboe-Sørensen R, Lennartz W, Kuendgen T, Kuhnhenn J, Latessa C, Mathes M, Menicucci A, Metzger S, Nieminen P, Pleskac R, Poivey C, Schardt D, Weinand U 2012 IEEE Trans. Nucl. Sci. 59 1161Google Scholar

    [2]

    Falguere D, Boscher D, Nuns T, Duzellier S, Bourdarie S, Ecoffet R, Barde S, Cueto J, Alonzo C, Hoffman C 2002 IEEE Trans. Nucl. Sci. 49 2782Google Scholar

    [3]

    Peterson E L 1992 IEEE Trans. Nucl. Sci. 39 1600Google Scholar

    [4]

    Calvel P, Barillot C, Lamothe P, Ecoffet R, Duzellier S, Falguere D 1996 IEEE Trans. Nucl. Sci. 43 2827Google Scholar

    [5]

    Edmonds L D 2000 IEEE Trans. Nucl. Sci. 47 1713Google Scholar

    [6]

    Barak J 2006 .IEEE Trans. Nucl. Sci. 53 3336Google Scholar

    [7]

    Koga R, George J, Swift G, Yui C, Edmonds L, Carmichael C, Langley T, Murray P, Lanes K, Napier M 2004 IEEE Trans. Nucl. Sci. 51 2825Google Scholar

    [8]

    Hansen D L 2015 IEEE Trans. Nucl. Sci. 62 2874Google Scholar

    [9]

    Sierawski B D, Pellish J A, Reed R A, Schrimpf R D, Warren K M, Weller R A, Mendenhall M H, Black J D, Tipton A D, Xapsos M A, Baumann R C, Deng X, Campola M J, Friendlich M R, Kim H S, Phan A M, Seidleck C M 2009 IEEE Trans. Nucl. Sci. 56 3085Google Scholar

    [10]

    Warren K M, Weller R A, Sierawski B D, Reed R A, Mendenhall M H, Schrimph R D, Massengill L W, Porter M E, Wilkinson J D, Label K A, Adams J H 2007 IEEE Trans. Nucl. Sci. 54 898Google Scholar

    [11]

    Xi K, Geng C, Zhang Z G, Hou M D, Sun Y M, Luo J, Liu T Q, Wang B, Ye B, Yin Y N, Liu J 2016 Chin. Phys. C 40 066001Google Scholar

    [12]

    Warren K M, Sierawski B D, Reed R A, Weller R A, Carmichael C, Lesea A, Mendenhal M H, Dodd P E, Schrimpf R D, Massengill L W, Hoang T, Wan H, De Jong J L, Padovani R, Fabula J J 2007 IEEE Trans. Nucl. Sci. 54 2419Google Scholar

    [13]

    Gorbunov M S, Boruzdina A B, Dolotov P S 2016 IEEE Trans. Nucl. Sci. 63 2250Google Scholar

    [14]

    Loveless T D, Jagannathan S, Reece T, Chetia J, Bhuva B L, McCurdy M W, Massengill L W, Wen S J, Wong R, Rennie D 2011 IEEE Trans. Nucl. Sci. 58 1008Google Scholar

    [15]

    Amusan O A, Massengill L W, Baze M. P., Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C, Alles M L 2007 IEEE Trans. Nucl. Sci. 52 2584

    [16]

    Gorbunov M S, Dolotov P S, Antonov A A, Zebrev G.I, Emeliyanov V V, Boruzdina A B, Petrov A G, Ulanova A V 2014 IEEE Trans. Nucl. Sci. 61 1575Google Scholar

    [17]

    Liu L, Yue S G, Lu S J 2015 J. Semicond. 36 115007Google Scholar

    [18]

    Cabanas-Holmen M, Cannon E H, Rabaa S, Amort T, Ballast J, Carson M, Lam D, Brees R 2013 IEEE Trans. Nucl. Sci. 60 4374Google Scholar

    [19]

    European Space Agency 2014 ESCC Basic Specification NO. 25100

    [20]

    Turflinger T L, Clymer D A, Mason L W, Stone S, George J S, Koga R, Beach E, Huntington K, Turflinger T L 2017 IEEE Trans. Nucl. Sci. 64 309Google Scholar

    [21]

    Schwank J R, Shaneyfelt M R, Baggio J, Dodd P E, Felix J A, Ferlet-Cavrois V, Paillet P, Lambert D, Sexton F W, Hash G L, Blackmore E 2006 IEEE Trans. Nucl. Sci. 52 2622

    [22]

    罗尹虹, 张凤祁, 王燕萍, 王圆明, 郭晓强, 郭红霞 2016 物理学报 65 068501Google Scholar

    Luo Y H, Zhang F Q, Wang Y P, Wang Y M, Guo X Q, Guo H X 2016 Acta Phys. Sin. 65 068501Google Scholar

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出版历程
  • 收稿日期:  2019-06-06
  • 修回日期:  2019-10-06
  • 上网日期:  2019-12-05
  • 刊出日期:  2020-01-05

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