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用直流吸气溅射法在液氮冷底板上分别制备了MoxGe1-x,MoxSi1-x的薄膜。其形成非晶的成份分别为Ge>22at%,Si>18at％。超导转变临界温度Tc在非晶状态下随着Ge,Si的含量增加而下降(约6—3K)。非晶Mo77Ge23膜的晶化温度为780℃,而非晶Mo78Si22膜的晶化温度为480℃。MoxGe1-x and MoxSi1-x films are prepared by d.c. getter sputtering method onto liquid nitrogen cooled substrate. The compositions forming the amorphous state are found to be Ge>22at% and Si>18at% respectively. The superconducting transition temperature decrease with the increase of Ge, Si content from 6K to 3K in the amorphous state.The crystallization temperature of a-Mo77Ge23 is 780℃ and that of a-Mo78Si22 is 480℃.
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