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Si(111)解理面氧吸附后Si L2,3VV俄歇谱形的分析

徐至中 戴道宣 邹惠良

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Si(111)解理面氧吸附后Si L2,3VV俄歇谱形的分析

徐至中, 戴道宣, 邹惠良

THE LINE SHAPE ANALYSIS FOR Si L2,3 VV AUGER SPECTRA OF CLEAVED Si (111) SURFACES WITH OXYGEN ADSORBED

XU ZHI-ZHONG, DAI DAO-XUAN, ZOU HUI-LIANG
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  • 对Si(111)解理清洁表面及其在氧吸附后测得的SiL2,3VV俄歇谱进行数字积分、背底扣除及退自卷积后,得到了解理清洁表面在氧吸附前后的部分跃迁态密度。分析这两者之间的差别,结合别人的实验及理论计算结果表明:氧同时以分子形式及原子形式进行吸附,在吸附过程中,还同时形成氧化硅的价态。
    By digital integration, background subtraction and self-deconvolution for SiL2,3VV Auger spectra measured on the cleaved clean Si (111) surface and that with oxygen adsorbed, the partial transition densities of state of clean surface and adsorbed surface are obtained. With reference to other experimental and theoretical results, it could be inferred from these partail transition densities of state that oxygen is adsorbed both in a molecular state and in an atomic state, and in the adsorbed stage the oxide may also be formed.
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出版历程
  • 收稿日期:  1983-10-04
  • 刊出日期:  2005-05-10

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