-
用光致荧光的方法对分子束外延生长的(110)方向的掺Be的GaAs带隙变窄随掺杂浓度的变化进行研究。结果表明:对于P-GaAs,带隙变窄主要是价带上移造成的,杂质能级(带)相对导带的位置不变。因此,电离能随着掺杂浓度的增加而减小。The band-gap narrowing of p-type GaAs as a function of doping concentrafion has been investigated by photoluminescence spectroscopy on samples grown by molecular beam epitaxy on (110) semi-insulating GaAs. It was first found that the band-gap narrowing of p-type GaAs comes from the moving up of valence band, the location of dopant level (band) remains unchanged relative to conduction band, and the ionization energy decreases with the increase of doping concentration.
计量
- 文章访问数: 7397
- PDF下载量: 360
- 被引次数: 0
下载:
