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应力导致InAs/In0.15Ga0.85As量子点结构中In0.15Ga0.85As阱层的合金分解效应研究

王 茺 刘昭麟 陈平平 崔昊杨 夏长生 杨 宇 陆 卫

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应力导致InAs/In0.15Ga0.85As量子点结构中In0.15Ga0.85As阱层的合金分解效应研究

王 茺, 刘昭麟, 陈平平, 崔昊杨, 夏长生, 杨 宇, 陆 卫

Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure

Wang Chong, Liu Zhao-Lin, Chen Ping-Ping, Cui Hao-Yang, Xia Chang-Sheng, Yang Yu, Lu Wei
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  • 利用固源分子束外延技术,在In0.15Ga0.85As/GaAs量子阱生长了两个InAs/In0.15Ga0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In0.15Ga0.85As阱层的厚度和生长温度,获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果,发现该样品量子点的光学性质也同时得到
    Two InAs/In0.15Ga0.85As quantum dots-in-a-well (DWELL) samples have been grown by solid source molecular beam epitaxy (MBE). The increased size of InAs dots and more homogeneous dot-size distribution have been found in one InAs DWELL sample with growth optimized by changing both the growth temperature and the thickness in In0.15Ga0.85As well layers. The improved optical properties of this sample have also been confirmed by photoluminescence (PL) and piezomodulated reflectance (PzR) spectra. The numerical calculations based on effective mass approximation indicate that the increase of dot size and the improved optical properties are dominantly due to the strain driven alloy decomposition of In0.15Ga0.85As well layers.
    • 基金项目: 国家重点基础研究发展规划项目(批准号:2004CB619004),国家自然科学基金(批准号10234040和60567001)资助的课题.
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  • 文章访问数:  6967
  • PDF下载量:  892
  • 被引次数: 0
出版历程
  • 收稿日期:  2007-01-25
  • 修回日期:  2007-03-05
  • 刊出日期:  2007-09-20

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