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Cubic boron nitride thin films were deposited on silicon (100) substrates by sputtering. The films were characterized by Fourier transform infrared (FTIR) spectroscopy. The reflectance R(λ) of the films was obtained as a function of incident photon wavelengths and the thickness of the films was measured by Alpha-step. Using Kramers-Kronig transform and the reflectance spectrum R(λ), we calculated the absorption coefficient. The optical band gap was found to be 5.38eV for the films containing 55.4% of cubic phase.
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